Theresia Knobloch is a postdoctoral researcher focusing on fabrication, experimental characterization, and physical modeling of nanoelectronic devices based on 2D materials. She obtained her doctoral degree from TU Wien in 2021 and performed parts of her Ph.D. research as a visiting scholar at Purdue University, USA in 2018 and 2019 and Soochow University, China in 2017. For her work, she received several awards including the IEEE EDS Ph.D. Student Fellowship in 2021 and the Best Student Paper Award at the DRC in 2020. She joined the Institue for Microelectronics in 2016 while completing her master's degree in microelectronics and photonics. She acquired both her M.Sc. in 2016 and her B.Sc. in technical physics in 2014 from TU Wien with distinction. Currently, she primarily studies the electrical stability and reliability of 2D material-based field-effect transistors.