Johanna Luise Krüger was born in 1995 in Göttingen, Germany. She received her Diploma degree (Dipl.-Ing.) in Nanotechnology from the Freiberg University of Mining and Technology in 2020. Having completed her Diploma degree in the field of optoelectronics, her Diploma thesis focused on the aging behavior of SiC photodiodes within a cooperation between the Institute of Applied Physics Freiberg and the company sglux GmbH Berlin. After spending her last semester abroad at Villanova University in Pennsylvania, she joined the IuE in May 2020 to pursue a PhD with a further focus on the modeling of SiC transistors.