Sabine Leroch obtained her M.Sc. and doctoral degrees at TU Wien at the Institute of Theoretical Physics, after which she took a post-doctoral position at the Universidad Compludense de Madrid. She has many years of experience in classical molecular dynamic simulations in different fields and for a broad set of applications. She was previously employed as a post-doctoral researcher at the University of Natural Resources and Applied Life Sciences (BOKU) Vienna, in the field of bio-chemical engineering and as senior scientist at the Austrian Competence Center of Tribology. At the Institute for Microelectronics, Sabine is working in the Christian Doppler Laboratory for Multi-Scale Process Modeling of Semiconductor Devices and Sensors, where she is in charge of the atomistic description of physical processes taking place during the fabrication of semiconductor devices. In particular, she is investigating the implantation and activation of dopants in silicon carbide (SiC).