 | Etienne Navarro Dr. Tel.Nr.: +43 1 58801-360 |  Pubs | ||
| Worked for the IµE from 14-01-2018 to 30-12-2018. | ||||
Biography (as of 30-12-2018): Etienne Navarro was born in France in 1986. He studied physics and materials science at the Engineering school Phelma in Grenoble, France. He completed his Ph.d. thesis, in 2014, on the study and the modeling of the mechanical deformation of silicon wafers involved in the direct bonding process, which is used by the Soitec company for the fabrication of Silicon-On-Insulator wafers. He then worked two years in the CEA-Leti in Grenoble, on an exploratory project, aimed to use continuous laser thermal annealing in order to crystallize previously deposited silicon thin film. He joined the Institute for Microelectronics in January 2018, to work on the modeling of the plastic deformation of silicon wafers occurring during special high temperature annealing, in partnership with Soitec. | ||||
