• [BK-1] M. Waltl:
  "Robust Microelectronic Devices";
  MDPI, (2022), ISBN: 978-3-0365-3337-7, 130 page(s) doi:10.3390/books978-3-0365-3338-4.
  
  

• [PJ-32] L.F. Aguinsky, F. Rodrigues, G. Wachter, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
  "Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon";
  Solid-State Electronics, 191 (2022)(invited) , 108262-1 - 108262-8 doi:10.1016/j.sse.2022.108262.
  
  
• [PJ-31] J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
  "Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches";
  Proceedings of SPIE, 12157 (2022)(invited) , 1215708-1 - 1215708-14 doi:10.1117/12.2624595.
  
  
• [PJ-30] D.K. Ferry, J. Weinbub, M. Nedjalkov, S. Selberherr:
  "A Review of Quantum Transport in Field-Effect Transistors";
  Semiconductor Science and Technology, 37 (2022)(invited) , 043001-1 - 043001-32 doi:10.1088/1361-6641/ac4405.
  
  
• [PJ-29] Y. Illarionov, T. Knobloch, T. Grasser:
  "Inorganic Molecular Crystals for 2D Electronics";
  Nature Electronics, 4 (2022), 870 - 871 doi:10.1038/s41928-021-00691-w.
  
  
• [PJ-28] C. Lenz, A. Toifl, M. Quell, F. Rodrigues, A. Hössinger, J. Weinbub:
  "Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
  Solid-State Electronics, 191 (2022)(invited) , 108258-1 - 108258-8 doi:10.1016/j.sse.2022.108258.
  
  
• [PJ-27] T. Reiter, X. Klemenschits, L. Filipovic:
  "Impact of Plasma Induced Damage on the Fabrication of 3D NAND Flash Memory";
  Solid-State Electronics, 192 (2022)(invited) , 108261-1 - 108261-9 doi:10.1016/j.sse.2022.108261.
  
  
• [PJ-26] J. Weinbub, R. Kosik:
  "Computational Perspective on Recent Advances in Quantum Electronics: From Electron Quantum Optics to Nanoelectronic Devices and Systems";
  Journal of Physics: Condensed Matter, 34 (2022)(invited) , 163001-1 - 163001-32 doi:10.1088/1361-648X/ac49c6.
  
  
• [PJ-25] L.F. Aguinsky, G. Wachter, P. Manstetten, F. Rodrigues, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
  "Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators";
  Journal of Micromechanics and Microengineering, 31 (2021), 125003-1 - 125003-9 doi:10.1088/1361-6439/ac2bad.
  
  
• [PJ-24] J. Cervenka, R. Kosik, M. Nedjalkov:
  "A Deterministic Wigner Approach for Superposed States";
  Journal of Computational Electronics, 20 (2021), 2104 - 2110 doi:10.1007/s10825-021-01801-9.
  
  
• [PJ-23] S. Das, A. Sebastian, E. Pop, C. McClellan, A. Franklin, T. Grasser, T. Knobloch, Yu. Illarionov, A. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, L. Li, U. Avci, N. Bhat, T. Anthopoulos, R. Singh:
  "Transistors Based on Two-Dimensional Materials for Future Integrated Circuits";
  Nature Electronics, 4 (2021), 786 - 799 doi:10.1038/s41928-021-00670-1.
  
  
• [PJ-22] J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
  "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
  Microelectronics Reliability, 126 (2021), 114231-1 - 114231-5 doi:10.1016/j.microrel.2021.114231.
  
  
• [PJ-21] J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
  "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
  Proceedings of SPIE, 11805 (2021)(invited) , 1180519-1 - 1180519-8 doi:10.1117/12.2593937.
  
  
• [PJ-20] S. Fatemeh, M. Moradinasab, U. Schwalke, L. Filipovic:
  "Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications";
  ACS Omega, 6 (2021), 18770 - 18781 doi:10.1021/acsomega.1c01898.
  
  
• [PJ-19] L. Filipovic:
  "Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters";
  Microelectronics Reliability, 123 (2021), 114219-1 - 114219-14 doi:10.1016/j.microrel.2021.114219.
  
  
• [PJ-18] S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
  "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
  Solid-State Electronics, 186 (2021)(invited) , 108103 doi:10.1016/j.sse.2021.108103.
  
  
• [PJ-17] N. Gupta, A. Shah, S. Khan, S. Vishvakarma, M. Waltl, P. Girard:
  "Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications";
  Electronics, 10 (2021), 1718-1 - 1718-16 doi:10.3390/electronics10141718.
  
  
• [PJ-16] Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl:
  "Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies";
  Crystals, 11 (2021), 1150-1 - 1150-9 doi:10.3390/cryst11091150.
  
  
• [PJ-15] Yu. Illarionov, T. Knobloch, T. Grasser:
  "Crystalline Insulators for Scalable 2D Nanoelectronics";
  Solid-State Electronics, 185 (2021), 108043-1 - 108043-3 doi:10.1016/j.sse.2021.108043.
  
  
• [PJ-14] M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
  "Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
  Physical Review Applied, 16 (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026.
  
  
• [PJ-13] X. Klemenschits, S. Selberherr, L. Filipovic:
  "Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures";
  Computer Methods in Applied Mechanics and Engineering, 386 (2021), 114196-1 - 114196-22 doi:10.1016/j.cma.2021.114196.
  
  
• [PJ-12] T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
  "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
  Nature Electronics, 4 (2021), 98 - 108 doi:10.1038/s41928-020-00529-x.
  
  
• [PJ-11] R. Kosik, J. Cervenka, H. Kosina:
  "Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner Equation";
  Journal of Computational Electronics, 20 (2021), 2052 - 2061 doi:10.1007/s10825-021-01800-w.
  
  
• [PJ-10] J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
  "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental";
  IEEE Transactions on Electron Devices, 68 (2021), 6372 - 6378 doi:10.1109/TED.2021.3117740.
  
  
• [PJ-9] J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser:
  "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory";
  IEEE Transactions on Electron Devices, 68 (2021), 6365 - 6371 doi:10.1109/TED.2021.3116931.
  
  
• [PJ-8] R. Mills, M. Adams, S. Balay, J. Brown, A. Dener, M. Knepley, S. Kruger, H. Morgan, T. Munson, K. Rupp, B. Smith, S. Zampini, H. Zhang, J. Zhang:
  "Toward Performance-Portable PETSc for GPU-based Exascale Systems";
  Parallel Computing, 108 (2021), 102831-1 - 102831-16 doi:10.1016/j.parco.2021.102831.
  
  
• [PJ-7] R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
  "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
  Solid-State Electronics, 185 (2021)(invited) , 108075 doi:10.1016/j.sse.2021.108075.
  
  
• [PJ-6] M. Quell, G. Diamantopoulos, A. Hössinger, J. Weinbub:
  "Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes";
  Journal of Computational and Applied Mathematics, 392 (2021), 113488-1 - 113488-15 doi:10.1016/j.cam.2021.113488.
  
  
• [PJ-5] C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
  "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
  IEEE Transactions on Electron Devices, 68 (2021), 4016 - 4021 doi:10.1109/TED.2021.3092295.
  
  
• [PJ-4] A. Shah, N. Gupta, M. Waltl:
  "High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs";
  Analog Integrated Circuits and Signal Processing, 109 (2021), 657 - 671 doi:10.1007/s10470-021-01924-w.
  
  
• [PJ-3] V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr:
  "Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase";
  Solid-State Electronics, 184 (2021)(invited) , 108081-1 - 108081-9 doi:10.1016/j.sse.2021.108081.
  
  
• [PJ-2] D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser:
  "Toward Automated Defect Extraction From Bias Temperature Instability Measurements";
  IEEE Transactions on Electron Devices, 68 (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966.
  
  
• [PJ-1] M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser:
  "Impact of Single-Defects on the Variability of CMOS Inverter Circuits";
  Microelectronics Reliability, 126 (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275.
  
  

• [BC-7] C. Lenz, A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub:
  "A Novel Surface Mesh Simplification Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes";
  in: "Scientific Computing in Electrical Engineering", M. van Beurden, N. Budko, W. Schilders (ed); Springer, 2021, ISBN: 978-3-030-84238-3, 73 - 81 doi:10.1007/978-3-030-84238-3_8.
  
  
• [BC-6] T. Reiter, X. Klemenschits, L. Filipovic:
  "Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory";
  in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560693.
  
  
• [BC-5] T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
  "Temperature Increase in MRAM at Writing: A Finite Element Approach";
  in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3746-2, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560669.
  
  
• [BC-4] V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
  "Conductance due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
  in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560173.
  
  
• [BC-3] A.-M. El-Sayed, H. Seiler, H. Kosina, M. Jech, D. Waldhör, V. Sverdlov:
  "First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons with Realistic Terminations";
  in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560183.
  
  
• [BC-2] H. Ceric, H. Zahedmanesh, R. Lacerda de Orio, S. Selberherr:
  "Models and Techniques for Reliability Studies of Nano-Scaled Interconnects";
  in: "Advances in Measurements and Instrumentation: Reviews", S. Yurish (ed); International Frequency Sensor Association (IFSA) Publishing, 2021, ISBN: 978-84-09-33338-7, 93 - 111.
  
  

• [CP-29] S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
  "Design Support for Ultra-Scaled MRAM Cells";
  Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 13.12.2021 - 15.12.2021; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1.
  
  
• [CP-28] J. Franco, J. Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhör, D. Claes, H. Arimura, L. Ragnarsson, V. Afanas´Ev, N. Horiguchi, D. Linten, T. Grasser, B. Kaczer:
  "Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO₂ with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking";
  Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 12.12.2021 - 18.12.2021; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), 31.2.1 - 31.2.4 doi:10.1109/IEDM13553.2020.9372054.
  
  
• [CP-27] J. Weinbub:
  "Modeling and Simulation of Two-Dimensional Single-Electron Dynamics";
  Talk: Global Summit on Condensed Matter Physics (CONMAT), Valencia, Spain (virtual); (invited) 18.10.2021 - 20.10.2021; in "Proceedings of the Global Summit on Condensed Matter Physics (CONMAT)", (2021).
  
  
• [CP-26] J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
  "Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches";
  Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 04.10.2021 - 08.10.2021; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021).
  
  
• [CP-25] J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov:
  "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
  Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 04.10.2021 - 07.10.2021; in "Proceedings of the 32^nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysi", (2021), 1 - 4 doi:10.1016/j.microrel.2021.114231.
  
  
• [CP-24] M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
  "Finite Element Method Approach to MRAM Modeling";
  Talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 27.09.2021 - 01.10.2021; in "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), 70 - 73 doi:10.23919/MIPRO52101.2021.9597194.
  
  
• [CP-23] J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
  "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021).
  
  
• [CP-22] L. Filipovic, X. Klemenschits:
  "Fast Model for Deposition in Trenches using Geometric Advection";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021).
  
  
• [CP-21] S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
  "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021).
  
  
• [CP-20] X. Klemenschits, S. Selberherr, L. Filipovic:
  "Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 23 - 27 doi:10.1109/SISPAD54002.2021.9592605.
  
  
• [CP-19] F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub:
  "Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 27.09.2021 - 29.09.2021; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021).
  
  
• [CP-18] J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
  "Reinforcement Learning to Reduce Failures in SOT-MRAM Switching";
  Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 15.09.2021 - 15.10.2021; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021) doi:10.1109/IPFA53173.2021.9617362.
  
  
• [CP-17] J. Franco, H. Arimura, J. Marneffe, A. Vandooren, L. Ragnarsson, Z. Wu, D. Claes, E. D. Litta, N. Horiguchi, K. Croes, D. Linten, T. Grasser, B. Kaczer:
  "Novel Low Thermal Budget Gate Stack Solutions for BTI Reliability in Future Logic Device Technologies";
  Talk: IEEE International Conference on IC Design and Technology (ICICDT), Dresden, Germany; 15.09.2021 - 17.09.2021; in "Proceedings of IEEE International Conference on IC Design and Technology", (2021), 1 - 4 doi:10.1109/ICICDT51558.2021.9626482.
  
  
• [CP-16] L. Cvitkovich, M. Jech, D. Waldhör, A.-M. El-Sayed, C. Wilhelmer, T. Grasser:
  "Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface";
  Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), 235 - 238 doi:10.1109/ESSDERC53440.2021.9631790.
  
  
• [CP-15] D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser:
  "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide";
  Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), 239 - 242 doi:10.1109/ESSDERC53440.2021.9631837.
  
  
• [CP-14] V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
  "Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States";
  Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 17.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021).
  
  
• [CP-13] M. Waltl:
  "Impact of Defects in Semiconductor Transistors on Devices and Circuits";
  Talk: International Meet on Nanotechnology (NANOMEET), Porto, Portugal; (invited) 13.09.2021 - 15.09.2021; in "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021), 93.
  
  
• [CP-12] J. Weinbub:
  "Modeling and Simulation of Two-Dimensional Single-Electron Control";
  Talk: International Meet on Nanotechnology (NANOMEET), Porto, Portugal; (invited) 13.09.2021 - 15.09.2021; in "Proceedings of the International Meet on Nanotechnology (NANOMEET)", (2021).
  
  
• [CP-11] C. Wilhelmer, M. Jech, D. Waldhör, A.-M. El-Sayed, L. Cvitkovich, T. Grasser:
  "Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network";
  Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 13.09.2021 - 22.09.2021; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), 243 - 246 doi:10.1109/ESSDERC53440.2021.9631833.
  
  
• [CP-10] L. Filipovic, S. Selberherr:
  "Gas Sensing with Two-Dimensional Materials Beyond Graphene";
  Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 12.09.2021 - 14.09.2021; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2021), 29 - 36 doi:10.1109/MIEL52794.2021.9569088.
  
  
• [CP-9] R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
  "Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration";
  Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 06.09.2021 - 10.09.2021; in "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021).
  
  
• [CP-8] L.F. Aguinsky, G. Wachter, A. Scharinger, F. Rodrigues, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
  "Feature-Scale Modeling of Isotropic SF₆ Plasma Etching of Si";
  Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 54 - 55.
  
  
• [CP-7] A.-M. El-Sayed, H. Seiler, H. Kosina, V. Sverdlov:
  "First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS₂ Nanoribbons";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 113 - 114.
  
  
• [CP-6] T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
  "Temperature Increase in MRAM at Writing: A Finite Element Approach";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134.
  
  
• [CP-5] C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
  "Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 109 - 110.
  
  
• [CP-4] T. Reiter, X. Klemenschits, L. Filipovic:
  "Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory";
  Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 34 - 35.
  
  
• [CP-3] V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
  "Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
  Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 01.09.2021 - 03.09.2021; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 52 - 53.
  
  
• [CP-2] J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
  "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
  Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 01.08.2021 - 05.08.2021; in "Proceedings of SPIE Spintronics", (2021), 11805-53.
  
  
• [CP-1] T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov:
  "Heating Asymmetry in Magnetoresistive Random Access Memories";
  Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 18.07.2021 - 21.07.2021; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2021), 63 - 66.
  
  

• [DT-4] T. Knobloch:
  "On the Electrical Stability of 2D Material-Based Field-Effect Transistors";
  Reviewer: T. Grasser, P. Hurley, G. Düsberg; Institut für Mikroelektronik, 2021, oral examination: 22.12.2021.
  
  
• [DT-3] A. Toifl:
  "Numerical Methods for Three-Dimensional Selective Epitaxy and Anisotropic Wet Etching Simulations";
  Reviewer: J. Weinbub, U. Schmid, L.-T. Cheng; Institut für Mikroelektronik, 2021, oral examination: 19.08.2021 doi:10.34726/hss.2021.91744.
  
  
• [DT-2] M. Quell:
  "Parallel Velocity Extension and Load-Balanced Re-Distancing on Hierarchical Grids for High Performance Process TCAD";
  Reviewer: J. Weinbub, E. Gröller, M. Sussman; Institut für Mikroelektronik, 2022, oral examination: 13.01.2022 doi:10.34726/hss.2022.97084.
  
  
• [DT-1] X. Klemenschits:
  "Emulation and Simulation of Microelectronic Fabrication Processes";
  Reviewer: L. Filipovic, A. Erdmann, H. Pottmann; Institut für Mikroelektronik, 2022, oral examination: 08.04.2022.
  
  

• [MT-2] T. Reiter:
  "Stabilisierung von Spin-Ensembles in hybriden Quantensystemen";
  Supervisor: S. Rotter; Institut für Theoretische Physik (136), 2022, final examination: 29.04.2022.
  
  
• [MT-1] M. Kratzmann:
  "Entwicklung eines rauscharmen CV Messmoduls für die Defektspektroskopie von MOS Transistoren";
  Supervisor: T. Grasser, M. Waltl; E360, 2021, final examination: 18.11.2021.
  
  

• [BT-2] S. Reininger:
  "Rasterization for Flux Calculations in Topography Simulations";
  Supervisor: J. Weinbub, L.F. Aguinsky; E360, 2021.
  
  
• [BT-1] M. Mulaomerovic:
  "Using Boost.Python for Building Robust Python Interfaces for High Performance C++ Libraries";
  Supervisor: J. Weinbub, P. Manstetten; E360, 2021.