Biography:
Robert Entner was born in Graz, Austria, in 1977. He studied electrical engineering at the Technische Universität Wien, where he received the degree of Diplomingenieur in 2003. He joined the Institute for Microelectronics in July 2003, where he is currently working on his doctoral degree. In summer 2005 he held a visiting research position at the IMEC research center in Leuven, Belgium. His current scientific interests include the investigation of negative bias temperature instability in high-voltage MOS structures.