Papers in Conference Proceedings Papers in Journals and Books Edited Books Doctoral Theses Master's Theses Bachelor's Theses	Publications Link to the publication database of the Vienna University of Technology Papers in Conference Proceedings [V60] M. Pourfath, V. Sverdlov, S. Selberherr: "Modeling Demands for Nanoscale Devices"; Talk: Device Research Conference, South Bend (invited); 06-21-2010 - 06-23-2010; in: "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5; 211 - 214. [V59] J. Weinbub, K. Rupp, S. Selberherr: "ViennaIPD - An Input Control Language for Scientific Computing"; Talk: Industrial Simulation Conference (ISC), Budapest; 06-07-2010 - 06-09-2010; in: "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57; 34 - 38. [V58] N. Neophytou, H. Kosina: "Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model"; Talk: 29th International Conference on Thermoelectrics, Shanghai; 05-30-2010 - 06-03-2010; in: "Proceedings of the 29th International Conference on Thermoelectrics", (2010), 71. [V57] A. Garcia-Barrientos, V. Palankovski, V. Grimalsky: "Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films"; Talk: 27th International Conference on Microelectronics, Nis; 05-16-2010 - 05-19-2010; in: "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0; 161 - 164. [V56] V.Grimalsky, L.M.Gaggero-S., S.Koshevaya, A.Garcia-Barrientos: "Electron Spectrum of δ-doped Quantum Wells by Thomas-Fermi Method at Finite Temperatures"; Talk: 27th International Conference on Microelectronics, Nis; 05-16-2010 - 05-19-2010; in: "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0; 119 - 122. [V55] V. Sverdlov, S. Selberherr: "Modeling Floating Body Z-RAM Storage Cells"; Talk: 27th International Conference on Microelectronics, Nis (invited); 05-16-2010 - 05-19-2010; in: "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0; 45 - 50. [V54] T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter: "Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 1063 - 1068. [V53] J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser: "Improvements of NBTI Reliability in SiGe p-FETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 1082 - 1085. [V52] T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 16 - 25. [V51] B. Kaczer, T. Grasser, P. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger: "Origin of NBTI Variability in Deeply Scaled pFETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 26 - 32. [V50] G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser: "Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 1073 - 1077. [V49] H. Reisinger, T. Grasser, C. Schlunder, W. Gustin: "The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 7 - 15. [V48] J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "Recovery-Free Electron Spin Resonance Observations of NBTI Degradation"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 43 - 49. [V47] C. Poschalko, S. Selberherr: "Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables"; Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 04-12-2010 - 04-16-2010; in: "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9; 1102 - 1105. [V46] K. Rupp: "Increased Efficiency In Finite Element Computations Through Template Metaprogramming"; Talk: Spring Simulation Multiconference, Florida; 04-12-2010 - 04-15-2010; in: "Proceedings of the Spring Simulation Multiconference 2010", (2010). [V45] K. Rupp, T. Grasser, A. Jüngel: "A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: Junior Scientist Conference 2010, Wien; 04-07-2010 - 04-09-2010; in: "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9; 7 - 8. [V44] S. Vitanov, V. Palankovski: "High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs"; Poster: Junior Scientist Conference, Wien; 04-07-2010 - 04-09-2010; in: "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9; 59 - 60. [V43] V. Sverdlov, S. Selberherr: "Scalability of a Second Generation Z-RAM Cell: A Computational Study"; Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 03-28-2010 - 04-01-2010; in: "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9; 232 - 247. [V42] N. Neophytou, H. Kosina: "Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires"; Talk: Annual March Meeting of the American Physical Society, Portland; 03-15-2010 - 03-19-2010; in: "Proceedings of the Annual March Meeting of the American Physical Society", (2010), 401. [V41] N. Neophytou, H. Kosina: "Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model"; Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 02-21-2010 - 02-24-2010; in: "Nanostructured Thermoelectric Materials", (2010). [V40] O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr: "Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 01-25-2010 - 01-27-2010; in: "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92. [V39] M. Pourfath, S. Selberherr: "Modeling Optical Sensors Based on Carbon Nanotubes"; Talk: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi (invited); 12-16-2009 - 12-19-2009; in: "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), 1381 - 1384. [V38] M. Pourfath, S. Selberherr: "Carbon-Based Electronics: A Computational Study"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi (invited); 12-15-2009 - 12-19-2009; in: "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009). [V37] V. Sverdlov, O. Baumgartner, S. Selberherr: "Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band"; Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 12-09-2009 - 12-11-2009; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1; TP6-03.1 - 2. [V36] S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12-09-2009 - 12-11-2009; in: "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1; 2 pages. [V35] T. Grasser, H. Reisinger, W. Gös, T. Aichinger, P. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer: "Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise"; Talk: International Electron Devices Meeting (IEDM), Baltimore; 12-07-2009 - 12-09-2009; in: "Proceedings of the International Electron Devices Meeting", (2009). [V34] M. Pourfath, H. Kosina, S. Selberherr: "Theoretical Study of Graphene Nanoribbon Photo-Detectors"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 11-30-2009 - 12-04-2009; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), 178 - 179. [V33] S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates"; Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 11-02-2009 - 11-04-2009; in: "HETECH 2009 Book of Abstracts", (2009), 109 - 110. [V32] B. Bindu, W. Gös, B. Kaczer, T. Grasser: "Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 93 - 96. [V31] H. Reisinger, T. Grasser, C. Schlünder: "A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 30 - 35. [V30] J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 42 - 45. [V29] R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser: "On the Thermal Activation of Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 36 - 41. [V28] R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "Electromigration Failure Development in Modern Dual-Damascene Interconnects"; Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 10-12-2009 - 10-14-2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 15 (2009), ISBN: 978-3-90188-237-1; 5 pages. [V27] V. Sverdlov, S. Selberherr: "Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach"; Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 10-12-2009 - 10-14-2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 21 (2009), ISBN: 978-3-90188-237-1; 4 pages. [V26] P. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 10-05-2009 - 10-09-2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009). [V25] V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Modeling Techniques for Strained CMOS Technology"; Talk: ULSI Process Integration, Vienna (invited); 10-04-2009 - 10-09-2009; in: "Proceedings of the 216th Meeting of the Electrochemical Society", (2009), ISBN: 978-1-56677-744-5; 3 - 18. [V24] P. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation"; Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 09-14-2009 - 09-18-2009; in: "Proceedings of the 39th European Solid-State Device Research Conference", (2009), ISBN: 978-1-4244-4351-2; 311 - 314. [V23] G. Milovanovic, O. Baumgartner, H. Kosina: "Simulation of Quantum Cascade Lasers using Robin Boundary Conditions"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 09-14-2009 - 09-17-2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; 7 - 8. [V22] M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr: "Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 09-14-2009 - 09-17-2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; 13 - 14. [V21] S. Vitanov, V. Palankovski: "Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 09-14-2009 - 09-17-2009; in: "Annual Journal of Electronics", (2009), ISSN: 1313-1842; 144 - 147. [V20] H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Copper Microstructure Impact on Evolution of Electromigration Induced Voids"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 178 - 181. [V19] O. Ertl, S. Selberherr: "A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 174 - 177. [V18] W. Gös, T. Grasser, M. Karner, B. Kaczer: "A Model for Switching Traps in Amorphous Oxides"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 159 - 162. [V17] H. Kosina: "Transport Modeling for Nanowires and Nanotubes"; Talk: Final FoNE Conference, Miraflores de la Sierra, Madrid; 09-09-2009 - 09-13-2009; in: "Proceedings of the Final FoNE Conference", (2009), 35. [V16] N. Neophytou, H. Kosina, S. Selberherr, G. Klimeck: "Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 71 - 74. [V15] R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 182 - 185. [V14] V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 51 - 54. [V13] O. Ertl, S. Selberherr: "Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 08-31-2009 - 09-03-2009; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2009), ISBN: 978-1-56677-737-7; 61 - 68. [V12] V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 08-31-2009 - 09-03-2009; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2009), ISBN: 978-1-56677-737-7; 389 - 396. [V11] N. Neophytou, M. Wagner, H. Kosina, S. Selberherr: "Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model"; Talk: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 07-26-2009 - 07-30-2009; in: "Book of Abstracts", (2009), 91. [V10] R. Heinzl: "Data Structure Properties for Scientific Computing: An Algebraic Topology Library"; Talk: European Conference on Object-Oriented Programming, Genova; 07-07-2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. [V9] P. Schwaha, R. Heinzl, M. Nedjalkov: "The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example"; Talk: European Conference on Object-Oriented Programming, Genova; 07-07-2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. [V8] R. Sonderfeld, R. Heinzl: "A Generic and Self-Optimizing Polynomial Library"; Talk: European Conference on Object-Oriented Programming, Genova; 07-07-2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5. [V7] V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr: "Mobility Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 07-07-2009 - 07-11-2009; in: "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301. [V6] H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration Induced Voids"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 07-06-2009 - 07-10-2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6; 694 - 697. [V5] R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on the Electromigration Lifetime Distribution"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 07-06-2009 - 07-10-2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734. [V4] M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr: "Particle Model of the Scattering-Induced Wigner Function Correction"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-04-2009 - 06-08-2009; in: "Proceedings of the 7th International Conference on Large-Scale Scientific Computations", (2009), ISSN: 0302-9743; 411 - 418. [V3] M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-04-2009 - 06-08-2009; in: "Proceedings of the 7th International Conference on Large-Scale Scientific Computations", Springer, (2009), ISSN: 0302-9743; 443 - 450. [V2] T. Grasser, W. Gös, B. Kaczer: "Critical Modeling Issues in Negative Bias Temperature Instability"; Talk: 215th ECS Meeting, San Francisco; 05-24-2009 - 05-29-2009; in: "Proceedings of the 215th ECS Meeting", 19 (2009), 265 - 287. [V1] T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Study of the Properties of Biotin-Streptavidin Sensitive BioFETs"; Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 01-14-2009 - 01-17-2009; in: "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2; 24 - 30. Papers in Journals and Books [P28] T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip"; IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; 3 - 8. [P27] O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k·p Schrödinger Equation"; Solid-State Electronics, 54 (2010), 143 - 148. [P26] K. Rupp, A. Jüngel, T. Grasser: "Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors"; in: "ASC Report 10/2010", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2, 1 - 32. [P25] O. Ertl, S. Selberherr: "Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation"; Microelectronic Engineering, 87 (2010), 20 - 29. [P24] R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm: "Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing"; IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; 47 - 54. [P23] O. Triebl, T. Grasser: "Numerical Power/HV Device Modeling"; in: "Power/HV MOS Devices Compact Modeling", Springer, 2010, ISBN: 978-90-481-3045-0, 1 - 32. [P22] B. Kaczer, P. Roussel, T. Grasser, G. Groeseneken: "Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI"; IEEE Electron Device Letters, 31 (2010), 5; 411 - 413. [P21] N. Neophytou, S. Kim, G. Klimeck, H. Kosina: "On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias"; Journal of Applied Physics, 107 (2010), 113701-1 - 113701-9. [P20] N. Neophytou, M. Wagner, H. Kosina, S. Selberherr: "Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model"; Journal of Electronic Materials, 1 (2010). [P19] R. Orio, H. Ceric, S. Selberherr: "Physically based Models of Electromigration: From Black's Equation to Modern TCAD Models"; Microelectronics Reliability (invited), 50 (2010), 6; 775 - 789. [P18] T. Windbacher, V. Sverdlov, S. Selberherr: "Biotin-Streptavidin Sensitive BioFETs and Their Properties"; in: "Biomedical Engineering Systems and Technologies", Springer, 2010, ISBN: 978-3-642-11720-6, 85 - 95. [P17] K. Rupp, S. Selberherr: "The Economic Limit to Moore's Law"; Proceedings of the IEEE, 98 (2010), 3; 351 - 353. [P16] J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance"; Applied Physics Letters, 96 (2010), 22; 223509-1 - 223509-3. [P15] T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting"; Solid-State Electronics, 54 (2010), 137 - 142. [P14] T. Aichinger, M. Nelhiebel, T. Grasser: "A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI"; IEEE Transactions on Electron Devices, 56 (2009), 12; 3018 - 3026. [P13] O. Ertl, S. Selberherr: "A Fast Level Set Framework for Large Three-Dimensional Topography Simulations"; Computer Physics Communications, 180 (2009), 1242 - 1250. [P12] T. Grasser, B. Kaczer, W. Gös, T. Aichinger, P. Hehenberger, M. Nelhiebel: "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Microelectronic Engineering (invited), 86 (2009), 7-9; 1876 - 1882. [P11] P. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Microelectronics Reliability, 49 (2009), 1013 - 1017. [P10] R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment"; International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; 505 - 520. [P9] H. Kosina, S. Selberherr: "The Field of Computational Electronics from a European Perspective (Guest Editorial)"; Journal of Computational Electronics, 8 (2009), 3-4; 173. [P8] R. Orio, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Journal Integrated Circuits and Systems, 4 (2009), 2; 67 - 72. [P7] M. Pourfath, H. Kosina: "Computational Study of Carbon-Based Electronics"; Journal of Computational Electronics, 8> (2009), 427 - 440. [P6] H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder: "A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides"; IEEE Transactions on Device and Materials Reliability, 9 (2009), 2; 106 - 114. [P5] P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications"; International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; 539 - 549. [P4] V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Modeling of Modern MOSFETs with Strain"; Journal of Computational Electronics (invited), 8 (2009), 3-4; 192 - 208. [P3] V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Journal Integrated Circuits and Systems, 4 (2009), 2; 55 - 60. [P2] S. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49 (2009), 998 - 1002. [P1] M. Pourfath, H. Kosina, S. Selberherr: "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Journal of Physics: Conference Series, 109 (2008), 012029; 1 - 5. Edited Books [E1] G. Meller, T. Grasser (ed.): "Organic Electronics"; Springer-Verlag, Berlin-Heidelberg, 2009, ISBN: 978-3-642-04537-0; 328 pages. Doctoral Theses [T5] T. Windbacher: "Engineering Gate Stacks for Field-Effect Transistors"; Reviewer: S. Selberherr, J. Summhammer; Institut für Mikroelektronik, 2010; oral examination: 06-25-2010. [T4] R. Orio: "Electromigration Modeling and Simulation"; Reviewer: S. Selberherr, J. Swart; Institut für Mikroelektronik, 2010; oral examination: 06-04-2010. [T3] O. Ertl: "Numerical Methods for Topography Simulation"; Reviewer: S. Selberherr, D. Süss; Institut für Mikroelektronik, 2010; oral examination: 05-07-2010. [T2] C. Poschalko: "The Simulation of Emission from Printed Circuit Boards under a Metallic Cover"; Reviewer: S. Selberherr, G. Brasseur; Institut für Mikroelektronik, 2009; oral examination: 11-20-2009. [T1] M. Vasicek: "Advanced Macroscopic Transport Models"; Reviewer: T. Grasser, J. Summhammer; Institut für Mikroelektronik, 2009; oral examination: 10-12-2009. Master's Theses [D2] M. Bina: "Simulation of Interface States Generated during Stress in MOSFETs"; Supervisor: T. Grasser, W. Gös; Institut für Mikroelektronik, 2010; final examination: 04-22-2010. [D1] J. Weinbub: "Adaptive Mesh Generation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009; final examination: 10-09-2009. Bachelor's Theses [B16] P. Gruber: "Cutting of Rectangular Boards Minimizing the Waste"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B15] M. Meidlinger: "Comparision of Different Interpolation Schemes"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B14] H. Scheidl: "Fast Fourier Transformation Applied to Audio Files"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B13] W. Schürer: "Comparision of Different Numerical Integration Methods"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B12] B. Thiemann: "Symbolic Mathematics in Python"; Supervisor: F. Schanovsky; Institut für Mikroelektronik, 2010. [B11] K. Zöggeler: "Data Compression of JPEG Files"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B10] R. Breuer: "Development of a Graphical User-Interface for a Python Script to the Analysis of NBTI"; Supervisor: Ph. Hehenberger; Institut für Mikroelektronik, 2009. [B9] R. Gansch: "Finite Difference Method for the 3D Heat Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B8] L. Haslinger: "Comparison of Different Methods to the Solution of Selected 1st Order Differential Equations"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B7] O. Lang: "Numerical Simulation of Reflexions in Conductors"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B6] K. Prinz: "Numerical Simulation of Electrostatic FinFET Cross Sections"; Supervisor: Z. Stanojevic; Institut für Mikroelektronik, 2009. [B5] H. Rögl: "Comparison of Root-Finding Algorithms"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B4] B. Schwarz: "Analysis of Non-Linear Distortions using SPICE"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2009. [B3] G. Stadler: "Cross Talk on Anti-Parallel Data Lines"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B2] A. Wolfschluckner: "Numerical Solution of the 1-Dimensional Schrödinger Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009. [B1] S. Zehetmayer: "Biologically Sensitive Field Effect Transistors (BioFETs)"; Supervisor: Th. Windbacher; Institut für Mikroelektronik, 2009.
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