Papers in Conference Proceedings
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- [V60] M. Pourfath, V. Sverdlov, S. Selberherr:
"Modeling Demands for Nanoscale Devices"; Talk: Device Research Conference, South Bend (invited); 06-21-2010 - 06-23-2010; in: "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5; 211 - 214.
- [V59] J. Weinbub, K. Rupp, S. Selberherr:
"ViennaIPD - An Input Control Language for Scientific Computing"; Talk: Industrial Simulation Conference (ISC), Budapest; 06-07-2010 - 06-09-2010; in: "Proceedings of the Industrial Simulation Conference", (2010), ISBN: 978-90-77381-5-57; 34 - 38.
- [V58] N. Neophytou, H. Kosina:
"Thermoelectric Properties of Scaled Silicon Nanostructures Using the sp3d5s*-SO Atomistic Tight-Binding Model"; Talk: 29th International Conference on Thermoelectrics, Shanghai; 05-30-2010 - 06-03-2010; in: "Proceedings of the 29th International Conference on Thermoelectrics", (2010), 71.
- [V57] A. Garcia-Barrientos, V. Palankovski, V. Grimalsky:
"Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films"; Talk: 27th International Conference on Microelectronics, Nis; 05-16-2010 - 05-19-2010; in: "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0; 161 - 164.
- [V56] V.Grimalsky, L.M.Gaggero-S., S.Koshevaya, A.Garcia-Barrientos:
"Electron Spectrum of δ-doped Quantum Wells by Thomas-Fermi Method at Finite Temperatures"; Talk: 27th International Conference on Microelectronics, Nis; 05-16-2010 - 05-19-2010; in: "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0; 119 - 122.
- [V55] V. Sverdlov, S. Selberherr:
"Modeling Floating Body Z-RAM Storage Cells"; Talk: 27th International Conference on Microelectronics, Nis (invited); 05-16-2010 - 05-19-2010; in: "Proceedings of the International Conference on Microelectronics", (2010), ISBN: 978-1-4244-7198-0; 45 - 50.
- [V54] T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter:
"Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 1063 - 1068.
- [V53] J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser:
"Improvements of NBTI Reliability in SiGe p-FETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 1082 - 1085.
- [V52] T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös:
"The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 16 - 25.
- [V51] B. Kaczer, T. Grasser, P. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger:
"Origin of NBTI Variability in Deeply Scaled pFETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 26 - 32.
- [V50] G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
"Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 1073 - 1077.
- [V49] H. Reisinger, T. Grasser, C. Schlunder, W. Gustin:
"The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 7 - 15.
- [V48] J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Recovery-Free Electron Spin Resonance Observations of NBTI Degradation"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 05-02-2010 - 05-06-2010; in: "Proceedings of the International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0; 43 - 49.
- [V47] C. Poschalko, S. Selberherr:
"Relation between the PCB Near Field and the Common Mode Coupling from the PCB to Cables"; Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Beijing; 04-12-2010 - 04-16-2010; in: "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC)", (2010), ISBN: 978-1-4244-5623-9; 1102 - 1105.
- [V46] K. Rupp:
"Increased Efficiency In Finite Element Computations Through Template Metaprogramming"; Talk: Spring Simulation Multiconference, Florida; 04-12-2010 - 04-15-2010; in: "Proceedings of the Spring Simulation Multiconference 2010", (2010).
- [V45] K. Rupp, T. Grasser, A. Jüngel:
"A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: Junior Scientist Conference 2010, Wien; 04-07-2010 - 04-09-2010; in: "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9; 7 - 8.
- [V44] S. Vitanov, V. Palankovski:
"High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs"; Poster: Junior Scientist Conference, Wien; 04-07-2010 - 04-09-2010; in: "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9; 59 - 60.
- [V43] V. Sverdlov, S. Selberherr:
"Scalability of a Second Generation Z-RAM Cell: A Computational Study"; Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 03-28-2010 - 04-01-2010; in: "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9; 232 - 247.
- [V42] N. Neophytou, H. Kosina:
"Atomistic Analysis of Thermoelectric Properties of Ultra Narrow Nanowires"; Talk: Annual March Meeting of the American Physical Society, Portland; 03-15-2010 - 03-19-2010; in: "Proceedings of the Annual March Meeting of the American Physical Society", (2010), 401.
- [V41] N. Neophytou, H. Kosina:
"Extracting thermoelectric properties of nanostructures using the atomistic sp3d5s*-SO tight-binding model"; Poster: 451. WE-Heraeus-Seminar, Physikzentrum Bad Honnef; 02-21-2010 - 02-24-2010; in: "Nanostructured Thermoelectric Materials", (2010).
- [V40] O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr:
"Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 01-25-2010 - 01-27-2010; in: "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92.
- [V39] M. Pourfath, S. Selberherr:
"Modeling Optical Sensors Based on Carbon Nanotubes"; Talk: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi (invited); 12-16-2009 - 12-19-2009; in: "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), 1381 - 1384.
- [V38] M. Pourfath, S. Selberherr:
"Carbon-Based Electronics: A Computational Study"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi (invited); 12-15-2009 - 12-19-2009; in: "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009).
- [V37] V. Sverdlov, O. Baumgartner, S. Selberherr:
"Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band"; Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 12-09-2009 - 12-11-2009; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1; TP6-03.1 - 2.
- [V36] S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"High-Temperature Modeling of AlGaN/GaN HEMTs"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 12-09-2009 - 12-11-2009; in: "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1; 2 pages.
- [V35] T. Grasser, H. Reisinger, W. Gös, T. Aichinger, P. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer:
"Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise"; Talk: International Electron Devices Meeting (IEDM), Baltimore; 12-07-2009 - 12-09-2009; in: "Proceedings of the International Electron Devices Meeting", (2009).
- [V34] M. Pourfath, H. Kosina, S. Selberherr:
"Theoretical Study of Graphene Nanoribbon Photo-Detectors"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 11-30-2009 - 12-04-2009; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), 178 - 179.
- [V33] S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates"; Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 11-02-2009 - 11-04-2009; in: "HETECH 2009 Book of Abstracts", (2009), 109 - 110.
- [V32] B. Bindu, W. Gös, B. Kaczer, T. Grasser:
"Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 93 - 96.
- [V31] H. Reisinger, T. Grasser, C. Schlünder:
"A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 30 - 35.
- [V30] J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 42 - 45.
- [V29] R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser:
"On the Thermal Activation of Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 10-18-2009 - 10-22-2009; in: "2009 IEEE International Integrated Reliability Workshop Final Report", (2009), ISBN: 978-1-4244-3921-8; 36 - 41.
- [V28] R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"Electromigration Failure Development in Modern Dual-Damascene Interconnects"; Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 10-12-2009 - 10-14-2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 15 (2009), ISBN: 978-3-90188-237-1; 5 pages.
- [V27] V. Sverdlov, S. Selberherr:
"Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach"; Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 10-12-2009 - 10-14-2009; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 21 (2009), ISBN: 978-3-90188-237-1; 4 pages.
- [V26] P. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 10-05-2009 - 10-09-2009; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009).
- [V25] V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling Techniques for Strained CMOS Technology"; Talk: ULSI Process Integration, Vienna (invited); 10-04-2009 - 10-09-2009; in: "Proceedings of the 216th Meeting of the Electrochemical Society", (2009), ISBN: 978-1-56677-744-5; 3 - 18.
- [V24] P. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation"; Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 09-14-2009 - 09-18-2009; in: "Proceedings of the 39th European Solid-State Device Research Conference", (2009), ISBN: 978-1-4244-4351-2; 311 - 314.
- [V23] G. Milovanovic, O. Baumgartner, H. Kosina:
"Simulation of Quantum Cascade Lasers using Robin Boundary Conditions"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 09-14-2009 - 09-17-2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; 7 - 8.
- [V22] M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr:
"Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 09-14-2009 - 09-17-2009; in: "Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8; 13 - 14.
- [V21] S. Vitanov, V. Palankovski:
"Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 09-14-2009 - 09-17-2009; in: "Annual Journal of Electronics", (2009), ISSN: 1313-1842; 144 - 147.
- [V20] H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Copper Microstructure Impact on Evolution of Electromigration Induced Voids"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 178 - 181.
- [V19] O. Ertl, S. Selberherr:
"A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 174 - 177.
- [V18] W. Gös, T. Grasser, M. Karner, B. Kaczer:
"A Model for Switching Traps in Amorphous Oxides"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 159 - 162.
- [V17] H. Kosina:
"Transport Modeling for Nanowires and Nanotubes"; Talk: Final FoNE Conference, Miraflores de la Sierra, Madrid; 09-09-2009 - 09-13-2009; in: "Proceedings of the Final FoNE Conference", (2009), 35.
- [V16] N. Neophytou, H. Kosina, S. Selberherr, G. Klimeck:
"Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 71 - 74.
- [V15] R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 182 - 185.
- [V14] V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego; 09-09-2009 - 09-11-2009; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices", (2009), ISBN: 978-1-4244-3947-8; 51 - 54.
- [V13] O. Ertl, S. Selberherr:
"Three-Dimensional Plasma Etching Simulation using Advanced Ray Tracing and Level Set Techniques"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 08-31-2009 - 09-03-2009; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2009), ISBN: 978-1-56677-737-7; 61 - 68.
- [V12] V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
"Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 08-31-2009 - 09-03-2009; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2009), ISBN: 978-1-56677-737-7; 389 - 396.
- [V11] N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures using an Atomistic Thight-Binding Model"; Talk: 28th International Conference/7th European Conference on Thermoelectrics, Freiburg; 07-26-2009 - 07-30-2009; in: "Book of Abstracts", (2009), 91.
- [V10] R. Heinzl:
"Data Structure Properties for Scientific Computing: An Algebraic Topology Library"; Talk: European Conference on Object-Oriented Programming, Genova; 07-07-2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5.
- [V9] P. Schwaha, R. Heinzl, M. Nedjalkov:
"The Forced Evolution of Implementations: Using a Monte Carlo Algorithm as Example"; Talk: European Conference on Object-Oriented Programming, Genova; 07-07-2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5.
- [V8] R. Sonderfeld, R. Heinzl:
"A Generic and Self-Optimizing Polynomial Library"; Talk: European Conference on Object-Oriented Programming, Genova; 07-07-2009; in: "Proceedings of the 8th workshop on Parallel/High-Performance", (2009), ISBN: 978-1-60558-547-5.
- [V7] V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr:
"Mobility Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 07-07-2009 - 07-11-2009; in: "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301.
- [V6] H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration Induced Voids"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 07-06-2009 - 07-10-2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6; 694 - 697.
- [V5] R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on the Electromigration Lifetime Distribution"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 07-06-2009 - 07-10-2009; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734.
- [V4] M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr:
"Particle Model of the Scattering-Induced Wigner Function Correction"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-04-2009 - 06-08-2009; in: "Proceedings of the 7th International Conference on Large-Scale Scientific Computations", (2009), ISSN: 0302-9743; 411 - 418.
- [V3] M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-04-2009 - 06-08-2009; in: "Proceedings of the 7th International Conference on Large-Scale Scientific Computations", Springer, (2009), ISSN: 0302-9743; 443 - 450.
- [V2] T. Grasser, W. Gös, B. Kaczer:
"Critical Modeling Issues in Negative Bias Temperature Instability"; Talk: 215th ECS Meeting, San Francisco; 05-24-2009 - 05-29-2009; in: "Proceedings of the 215th ECS Meeting", 19 (2009), 265 - 287.
- [V1] T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer:
"Study of the Properties of Biotin-Streptavidin Sensitive BioFETs"; Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 01-14-2009 - 01-17-2009; in: "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2; 24 - 30.
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Papers in Journals and Books |
- [P28] T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip"; IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; 3 - 8.
- [P27] O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k·p Schrödinger Equation"; Solid-State Electronics, 54 (2010), 143 - 148.
- [P26] K. Rupp, A. Jüngel, T. Grasser:
"Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors";
in: "ASC Report 10/2010", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2, 1 - 32.
- [P25] O. Ertl, S. Selberherr:
"Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation"; Microelectronic Engineering, 87 (2010), 20 - 29.
- [P24] R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm:
"Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing"; IEEE Transactions on Device and Materials Reliability, 10 (2010), 1; 47 - 54.
- [P23] O. Triebl, T. Grasser:
"Numerical Power/HV Device Modeling";
in: "Power/HV MOS Devices Compact Modeling", Springer, 2010, ISBN: 978-90-481-3045-0, 1 - 32.
- [P22] B. Kaczer, P. Roussel, T. Grasser, G. Groeseneken:
"Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI"; IEEE Electron Device Letters, 31 (2010), 5; 411 - 413.
- [P21] N. Neophytou, S. Kim, G. Klimeck, H. Kosina:
"On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias"; Journal of Applied Physics, 107 (2010), 113701-1 - 113701-9.
- [P20] N. Neophytou, M. Wagner, H. Kosina, S. Selberherr:
"Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model"; Journal of Electronic Materials, 1 (2010).
- [P19] R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black's Equation to Modern TCAD Models"; Microelectronics Reliability (invited), 50 (2010), 6; 775 - 789.
- [P18] T. Windbacher, V. Sverdlov, S. Selberherr:
"Biotin-Streptavidin Sensitive BioFETs and Their Properties";
in: "Biomedical Engineering Systems and Technologies", Springer, 2010, ISBN: 978-3-642-11720-6, 85 - 95.
- [P17] K. Rupp, S. Selberherr:
"The Economic Limit to Moore's Law"; Proceedings of the IEEE, 98 (2010), 3; 351 - 353.
- [P16] J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance"; Applied Physics Letters, 96 (2010), 22; 223509-1 - 223509-3.
- [P15] T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr:
"Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting"; Solid-State Electronics, 54 (2010), 137 - 142.
- [P14] T. Aichinger, M. Nelhiebel, T. Grasser:
"A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI"; IEEE Transactions on Electron Devices, 56 (2009), 12; 3018 - 3026.
- [P13] O. Ertl, S. Selberherr:
"A Fast Level Set Framework for Large Three-Dimensional Topography Simulations"; Computer Physics Communications, 180 (2009), 1242 - 1250.
- [P12] T. Grasser, B. Kaczer, W. Gös, T. Aichinger, P. Hehenberger, M. Nelhiebel:
"Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Microelectronic Engineering (invited), 86 (2009), 7-9; 1876 - 1882.
- [P11] P. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Microelectronics Reliability, 49 (2009), 1013 - 1017.
- [P10] R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr:
"GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment"; International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; 505 - 520.
- [P9] H. Kosina, S. Selberherr:
"The Field of Computational Electronics from a European Perspective (Guest Editorial)"; Journal of Computational Electronics, 8 (2009), 3-4; 173.
- [P8] R. Orio, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Journal Integrated Circuits and Systems, 4 (2009), 2; 67 - 72.
- [P7] M. Pourfath, H. Kosina:
"Computational Study of Carbon-Based Electronics"; Journal of Computational Electronics, 8> (2009), 427 - 440.
- [P6] H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides"; IEEE Transactions on Device and Materials Reliability, 9 (2009), 2; 106 - 114.
- [P5] P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr:
"Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications"; International Journal of Parallel, Emergent and Distributed Systems, 24 (2009), 6; 539 - 549.
- [P4] V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr:
"Modeling of Modern MOSFETs with Strain"; Journal of Computational Electronics (invited), 8 (2009), 3-4; 192 - 208.
- [P3] V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr:
"Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Journal Integrated Circuits and Systems, 4 (2009), 2; 55 - 60.
- [P2] S. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49 (2009), 998 - 1002.
- [P1] M. Pourfath, H. Kosina, S. Selberherr:
"The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Journal of Physics: Conference Series, 109 (2008), 012029; 1 - 5.
- [E1] G. Meller, T. Grasser (ed.):
"Organic Electronics"; Springer-Verlag, Berlin-Heidelberg, 2009, ISBN: 978-3-642-04537-0; 328 pages.
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- [T5] T. Windbacher:
"Engineering Gate Stacks for Field-Effect Transistors";
Reviewer: S. Selberherr, J. Summhammer; Institut für Mikroelektronik, 2010; oral examination: 06-25-2010.
- [T4] R. Orio:
"Electromigration Modeling and Simulation";
Reviewer: S. Selberherr, J. Swart; Institut für Mikroelektronik, 2010; oral examination: 06-04-2010.
- [T3] O. Ertl:
"Numerical Methods for Topography Simulation";
Reviewer: S. Selberherr, D. Süss; Institut für Mikroelektronik, 2010; oral examination: 05-07-2010.
- [T2] C. Poschalko:
"The Simulation of Emission from Printed Circuit Boards under a Metallic Cover";
Reviewer: S. Selberherr, G. Brasseur; Institut für Mikroelektronik, 2009; oral examination: 11-20-2009.
- [T1] M. Vasicek:
"Advanced Macroscopic Transport Models";
Reviewer: T. Grasser, J. Summhammer; Institut für Mikroelektronik, 2009; oral examination: 10-12-2009.
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- [D2] M. Bina:
"Simulation of Interface States Generated during Stress in MOSFETs";
Supervisor: T. Grasser, W. Gös; Institut für Mikroelektronik, 2010; final examination: 04-22-2010.
- [D1] J. Weinbub:
"Adaptive Mesh Generation";
Supervisor: E. Langer; Institut für Mikroelektronik, 2009; final examination: 10-09-2009.
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- [B16] P. Gruber:
"Cutting of Rectangular Boards Minimizing the Waste"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010.
- [B15] M. Meidlinger:
"Comparision of Different Interpolation Schemes"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010.
- [B14] H. Scheidl:
"Fast Fourier Transformation Applied to Audio Files"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010.
- [B13] W. Schürer:
"Comparision of Different Numerical Integration Methods"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010.
- [B12] B. Thiemann:
"Symbolic Mathematics in Python"; Supervisor: F. Schanovsky; Institut für Mikroelektronik, 2010.
- [B11] K. Zöggeler:
"Data Compression of JPEG Files"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010.
- [B10] R. Breuer:
"Development of a Graphical User-Interface for a Python Script to the Analysis of NBTI"; Supervisor: Ph. Hehenberger; Institut für Mikroelektronik, 2009.
- [B9] R. Gansch:
"Finite Difference Method for the 3D Heat Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009.
- [B8] L. Haslinger:
"Comparison of Different Methods to the Solution of Selected 1st Order Differential Equations"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009.
- [B7] O. Lang:
"Numerical Simulation of Reflexions in Conductors"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009.
- [B6] K. Prinz:
"Numerical Simulation of Electrostatic FinFET Cross Sections"; Supervisor: Z. Stanojevic; Institut für Mikroelektronik, 2009.
- [B5] H. Rögl:
"Comparison of Root-Finding Algorithms"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009.
- [B4] B. Schwarz:
"Analysis of Non-Linear Distortions using SPICE"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2009.
- [B3] G. Stadler:
"Cross Talk on Anti-Parallel Data Lines"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009.
- [B2] A. Wolfschluckner:
"Numerical Solution of the 1-Dimensional Schrödinger Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2009.
- [B1] S. Zehetmayer:
"Biologically Sensitive Field Effect Transistors (BioFETs)"; Supervisor: Th. Windbacher; Institut für Mikroelektronik, 2009.
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