Papers in Conference Proceedings Papers in Journals and Books Edited Books Habilitation Theses Doctoral Theses Master's Theses Bachelor's Theses	Publications Link to the publication database of the Vienna University of Technology Papers in Conference Proceedings [V95] G. R. Aloise, S. Vitanov, V. Palankovski: "Temperature Dependence of the Transport Properties of InN"; Talk: Microtherm 2011, Lodz, Poland; 2011-06-28 - 2011-07-01; in: "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4; 6 pages. [V94] H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (invited); 2011-06-26 - 2011-07-01; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33. [V93] N. Neophytou, H. Kosina: "Atomistic Simulations of Electronic and Thermoelectric Transport in Si Nanowires: Influence of Confinement and Orientation"; Talk: Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11), Plomarion, Greece; 2011-06-14 - 2011-06-17; in: "Conference Proceedings of the Workshop of the Physics and Applications of Semiconducting Nanowires (Nanowires11)", (2011). [V92] G. R. Aloise, S. Vitanov, V. Palankovski: "Performance Study of Nitride-Based Gunn Diodes"; Talk: Nanotech 2011, Boston, USA; 2011-06-13 - 2011-06-16; in: "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3; 4 pages. [V91] W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer: "Advanced Modeling of Oxide Defects for Random Telegraph Noise"; Talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 2011-06-12 - 2011-06-16; in: "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 pages. [V90] L. Filipovic, M. Nedjalkov, S. Selberherr: "A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 42 - 43. [V89] D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64. [V88] P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Phonon-Induced Decoherence in Electron Evolution"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 74 - 75. [V87] J. Weinbub, K. Rupp, S. Selberherr: "Distributed Heterogenous High-Performance Computing with ViennaCL"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in: "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 88 - 90. [V86] C. Poschalko, S. Selberherr: "Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities"; Talk: Asia-Pacific International Symposium on Electromagnetic Compatibility, Jeju, Korea; 2011-05-16 - 2011-05-19; in: "Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility", (2011), 4 pages. [V85] L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr: "A Simulator for Local Anodic Oxidation of Silicon Surfaces"; Talk: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 2011-05-08 - 2011-05-11; in: "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8; 695 - 698. [V84] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices"; Talk: 219th ECS Meeting, Montreal, Canada; 2011-05-01 - 2011-05-06; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011), 1 pages. [V83] D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr: "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors"; Talk: Proceedings 219th Meeting of the Electrochemical Society, Advanced Semiconductor-on- Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in: "Proceedings 219th Meeting of the Electrochemical Society, Advanced Semiconductor-on-Insulator Technology and Related Physics", Vol.35, No.5 (2011), ISBN: 978-1-56677-866-4; 277 - 282. [V82] Z. Stanojevic, V. Sverdlov, S. Selberherr: "Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement"; Poster: Proceedings 219th Meeting of the Electrochemical Society, Advanced Semiconductor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in: "Proceedings 219th Meeting of the Electrochemical Society, Advanced Semiconductor-on- Insulator Technology and Related Physics", Vol.35, No.5 (2011), ISBN: 978-1-56677-866-4; 117 - 122. [V81] S. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Modeling"; Talk: 219th ECS Meeting, Montreal, Canada; 2011-05-01 - 2011-05-06; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011), 1 pages. [V80] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micros-ystems, Linz, Austria; 2011-04-18 - 2011-04-20; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 pages. [V79] N. Manavizadeh, M. Pourfath, F. Raissi, E. Asl-Soleimani: "A Comprehensive Study of Nanoscale Field Effect Diodes"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 2011-04-18 - 2011-04-20; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 pages. [V78] A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina: "Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micros-ystems, Linz, Austria; 2011-04-18 - 2011-04-20; in: "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", IEEE, (2011), ISBN: 978-1-4577-0105-4; 4 pages. [V77] H. Kosina: "Semiconductor Device Modeling: The Last 30 Years"; Talk: GMe Forum 2011, Vienna, Austria (invited); 2011-04-14 - 2011-04-15; in: "Abstracts of the Invited Presentations", (2011), 9. [V76] J. Franco, B. Kaczer, G. Eneman, P. Roussel, M. Cho, J. Mitard, L. Witters, T. Hoffmann, G. Groeseneken, F. Crupi, T. Grasser: "On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 6 pages. [V75] T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P.-J. Wagner, J. Franco, M. Nelhiebel, B. Kaczer: "The ‘Permanent’ Component of NBTI: Composition and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 9 pages. [V74] B. Kaczer, S. Mahato, V. Valduga de Almeida Camargo, M. Toledano-Luque, P. Roussel, T. Grasser, F. Catthoor, P. Dobrovolny, P. Zuber, G.I. Wirth, G. Groeseneken: "Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations"; Poster: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 5 pages. [V73] H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlünder: "Understanding and Modeling AC BTI"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 8 pages. [V72] M. Toledano-Luque, B. Kaczer, P. Roussel, T. Grasser, G.I. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken: "Response of a Single Trap to AC Negative Bias Temperature Stress"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011), 8 pages. [V71] A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr: "Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method"; Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 2011-03-28 - 2011-04-01; in: "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 pages. [V70] N. Neophytou, H. Kosina: "Thermoelectric Properties of Ultra Narrow Silicon Nanowires from Atomistic Calculations"; Talk: APS March Meeting, Dallas, Texas; 2011-03-21 - 2011-03-25; in: "APS March Meeting 2011", (2011). [V69] D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Transport Properties of Spin Field-Effect Transistors Built on Si and InAs"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in: "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", IEEE, (2011), ISBN: 978-1-4577-0090-3; 210 - 213. [V68] L. Filipovic, O. Ertl, S. Selberherr: "Parallelization Strategy for Hierarchical Run Length Encoded Data Structures"; Talk: IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011), Innsbruck; 2011-02-15 - 2011-02-17; in: "Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011)", (2011), ISBN: 978-0-88986-864-9; 131 - 138. [V67] N. Neophytou, H. Kosina: "Confinement-Induced Mobility Increase in P-Type [110] and [111] Silicon Nanowires"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon On Insulator Thechnology, Devices and Circuits (EUROSOI)", (2011). [V66] D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Ballistic Spin Field-Effect Transistors Built on Silicon Fins"; Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60. [V65] Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina: "Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in: "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 99 - 100. [V64] J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas'ev, T. Kauerauf, P. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Hoffmann, G. Groeseneken: "6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT"; Talk: International Electron Devices Meeting (IEDM), San Francisco; 2010-12-06 - 2010-12-08; in: "Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM)", (2010), 70 - 73. [V63] T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, P. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, P. Roussel, M. Nelhiebel: "Recent Advances in Understanding the Bias Temperature Instability"; Talk: International Electron Devices Meeting (IEDM), San Francisco (invited); 2010-12-06 - 2010-12-08; in: "Proceedings of the 2010 IEEE International Electron Devices Meeting (IEDM)", (2010), 82 - 85. [V62] V. Sverdlov, S. Selberherr: "Strain Engineering Techniques: A Rigorous Physical Review"; Talk: Workshop on Innovative Devices and Systems (WINDS), Kona (invited); 2010-12-05 - 2010-12-10; in: "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-05. [V61] V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting"; Talk: Workshop on Innovative Devices and Systems (WINDS), Kona (invited); 2010-12-05 - 2010-12-10; in: "Abstracts of the Workshop on Innovative Devices and Systems (WINDS)", (2010), TH-06. [V60] H. Kosina: "Quantum Cascade Laser Modeling based on the Pauli Master Equation"; Talk: Austrian-Chinese Workshop on Dissipative Systems: Kinetic Theory and Semiconductor Applications, Wien (invited); 2010-11-03 - 2010-11-05; in: "Proceedings of the Austrian-Chinese Workshop on Dissipative Systems: Kinetic Theory and Semiconductor Applications", (2010), 6. [V59] K. Rupp: "Deterministic Numerical Solution of the Boltzmann Transport Equation"; Talk: Austrian-Chinese Workshop on Dissipative Systems: Kinetic Theory and Semiconductor Applications, Wien, Austria (invited); 2010-11-03 - 2010-11-05; in: "Proceedings of the Austrian-Chinese Workshop on Dissipative Systems: Kinetic Theory and Semiconductor Applications", (2010), 7 - 8. [V58] M. Pourfath, V. Sverdlov, S. Selberherr: "Transport Modeling for Nanoscale Semiconductor Devices"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai (invited); 2010-11-01 - 2010-11-04; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", 4 (2010), ISBN: 978-1-4244-5799-1; 1737 - 1740. [V57] A. Makarov, V. Sverdlov, S. Selberherr: "A Monte Carlo Simulation of Reproducible Hysteresis in RRAM"; Talk: International Workshop on Computational Electronics (IWCE), Pisa; 2010-10-26 - 2010-10-29; in: "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; 35 - 38. [V56] N. Neophytou, G. Klimeck, H. Kosina: "A Comprehensive Atomistic Analysis of Bandstructure Velocities in Si Nanowires"; Poster: International Workshop on Computational Electronics (IWCE), Pisa; 2010-10-26 - 2010-10-29; in: "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; 93 - 96. [V55] M. Pourfath, A. Yazdanpanah, M. Fathipour, H. Kosina: "On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs"; Talk: International Workshop on Computational Electronics (IWCE), Pisa; 2010-10-26 - 2010-10-29; in: "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; 45 - 48. [V54] F. Schanovsky, W. Gös, T. Grasser: "Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping"; Talk: International Workshop on Computational Electronics (IWCE), Pisa; 2010-10-26 - 2010-10-29; in: "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; 163 - 166. [V53] Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina: "Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k·p Versus Tight Binding"; Talk: International Workshop on Computational Electronics (IWCE), Pisa; 2010-10-26 - 2010-10-29; in: "Proceedings of the 14th International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4; 5 - 8. [V52] A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr: "First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory"; Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; 181 - 186. [V51] J. Weinbub, R. Heinzl, P. Schwaha, F. Stimpfl, S. Selberherr: "A Lightweight Material Library for Scientific Computing in C++"; Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in: "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1; 454 - 458. [V50] M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov: "'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), 76 - 79. [V49] T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, B. Kaczer: "On the 'Permanent' Component of NBTI"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), 2 - 7. [V48] P. Hehenberger, H. Reisinger, T. Grasser: "Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), 8 - 11. [V47] H. Reisinger, T. Grasser, K. Hofmann, W. Gustin, C. Schlünder: "The Impact of Recovery on BTI Reliability Assessments"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in: "Final Report of IEEE International Integrated Reliability Workshop", (2010), 12 - 16. [V46] S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010). [V45] W. Gös, F. Schanovsky, P. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; Talk: 218th ECS Meeting, Las Vegas, USA; 2010-10-10 - 2010-10-15; in: "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0; 565 pages. [V44] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Thermal Properties of Graphene Antidots"; Poster: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in: "Abstract Book of the Nanoelectronics Days 2010", (2010), 102. [V43] A. Makarov, V. Sverdlov, S. Selberherr: "Monte Carlo Simulation of Bipolar Resistive Switching Memories"; Talk: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in: "Proceedings of the Nanoelectronics Days 2010", (2010), 22. [V42] V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Enhanced Valley Splitting in Silicon Nanowires and Point Contacts"; Poster: Nanoelectronics Days 2010, Aachen, Germany; 2010-10-04 - 2011-10-07; in: "Abstract Book of the Nanoelectronics Days 2010", JARA-FIT, (2010), 118. [V41] N. Neophytou, M. Wagner, H. Kosina: "Atomistic Analysis of Thermoelectric Properties of Silicon Nanowires"; Talk: 8th European Conference on Thermoelectrics (ECT 2010), Como; 2010-09-22 - 2010-09-24; in: "Note-Book of Abstracts", (2010), 30. [V40] S. Vitanov, V. Palankovski: "Electron Mobility Models for III-Nitrides"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2010-09-22 - 2010-09-24; in: "Annual Journal of Electronics", (2010), ISSN: 1313-1842; 18 - 21. [V39] P. Gottschling, R. Heinzl, J. Weinbub, N. Kirchner, M. Sauer, A. Klomfass, C. Steinhardt, J. Wensch: "Generic C++ Implementation of High-Performance BFS-RBF-based Mesh Motion Schemes"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; 1631 - 1634. [V38] G. Mach, R. Heinzl, P. Schwaha, F. Stimpfl, J. Weinbub, S. Selberherr: "A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; 1647 - 1650. [V37] P. Schwaha, R. Heinzl: "Marching Simplices"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in: "AIP Conference Proceedings", 1281 (2010), ISBN: 978-0-7354-0834-0; 1651 - 1654. [V36] F. Stimpfl, J. Weinbub, R. Heinzl, P. Schwaha, S. Selberherr: "A Unified Topological Layer for Finite Element Space Discretization"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; 1655 - 1658. [V35] J. Weinbub, P. Schwaha, R. Heinzl, F. Stimpfl, S. Selberherr: "A Dispatched Covariant Type System for Numerical Applications in C++"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodos; 2010-09-19 - 2010-09-25; in: "AIP Conference Proceedings", (2010), ISBN: 978-0-7354-0834-0; 1663 - 1666. [V34] J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, L. Miglio: "Strained MOSFETs on Ordered SiGe Dots"; Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in: "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; 297 - 300. [V33] A. Makarov, V. Sverdlov, S. Selberherr: "A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory"; Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in: "Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3; 396 - 399. [V32] S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 pages. [V31] S. Vitanov, V. Palankovski, S. Selberherr: "Hydrodynamic Models for GaN-Based HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6; 4 pages. [V30] C. Schlünder, H. Reisinger, W. Gustin, T. Grasser: "A New Physics-Based NBTI Model for DC-and AC-Stress enabling Accurate Circuit Aging Simulations considering Recovery"; Talk: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 2010-09-13 - 2010-09-15; in: "GMM- Fachbericht", 66 (2010), 33 - 40. [V29] M. Pourfath, A. Yazdanpanah, H. Kosina: "The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons"; Talk: Ψk - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in: "Abstract Book", (2010), 419. [V28] F. Schanovsky, W. Gös, T. Grasser: "Hole Capture into Oxide Defects in MOS Structures from First Principles"; Poster: Ψk - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in: "Abstract Book", (2010), 435. [V27] K. Rupp, F. Rudolf, J. Weinbub: "ViennaCL - A High Level Linear Algebra Library for GPUs and Multi-Core CPUs"; Talk: International Workshop on GPUs and Scientific Applications (GPUScA 2010), Vienna; 2010-09-11; in: "Proceedings of the International Workshop on GPUs and Scientific Applications (GPUScA 2010)", (2010), 51 - 56. [V26] A. Garcia-Barrientos, V. Palankovski: "Amplification of Space Charge Waves in n-InP Films"; Talk: 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010), Chiapas, Mexico; 2010-09-08 - 2010-09-10; in: "Proceedings of the 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010)", IEEE, (2010), ISBN: 978-1-4244-7314-4; 613 - 616. [V25] H. Ceric, R. Orio, S. Selberherr: "Impact of Parameter Variability on Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna; 2010-09-06 - 2010-09-08; in: "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices", (2010), ISBN: 978-1-4244-7699-2; 217 - 220. [V24] O. Ertl, L. Filipovic, S. Selberherr: "Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna; 2010-09-06 - 2010-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7700-5; 49 - 52. [V23] A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna; 2010-09-06 - 2010-09-08; in: "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; 237 - 240. [V22] K. Rupp, T. Grasser, A. Jüngel: "System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna; 2010-09-06 - 2010-09-08; in: "Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices", (2010), ISBN: 978-1-4244-7699-2; 159 - 162. [V21] G. Milovanovic, O. Baumgartner, H. Kosina: "Design of a MIR QCL based on Intervalley Electron Transfer: A Monte Carlo Approach"; Poster: 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Shanghai; 2010-09-05 - 2010-09-09; in: "Proceedings of the 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices", (2010), 140 - 141. [V20] A. Makarov, V. Sverdlov, S. Selberherr: "Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations"; Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39. [V19] M. Nedjalkov, S. Selberherr, I. Dimov: "Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation"; Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in: "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-43. [V18] V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Confinment-Enhanced Valley Splitting for Spin-Driven Silicon Devices"; Talk: 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 2010-08-01 - 2010-08-04; in: "Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), 273 - 274. [V17] K. Rupp: "Symbolic Integration at Compile Time in Finite Element Methods"; Talk: International Symposium on Symbolic and Algebraic Computation (ISSAC), Munich; 2010-07-25 - 2010-07-28; in: "Proceedings of the 2010 International Symposium on Symbolic and Algebraic Computation", (2010), 347 - 354. [V16] H. Ceric, R. Orio, S. Selberherr: "Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect"; Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 167 - 170. [V15] A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 309 - 312. [V14] I. Starkov, S. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 139 - 144. [V13] S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 341 - 345. [V12] P.-J. Wagner, T. Grasser, H. Reisinger, B. Kaczer: "Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy"; Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 134 - 138. [V11] A. Dedyk, Y. Pavlova, O. V. Pakhomov, A. S. Starkov, I. Starkov, A. Semenov, S. Karmanenko: "Capacitance Hysteresis of the Temperature Dependence for Ferroelectric Barium-Strontium Titanate Capacitors"; Poster: 16th Workshop on Dielectric Materials (WoDiM), Bratislava, Slovakia; 2010-06-28 - 2010-06-30; in: "Book of Abstracts WoDiM 2010", (2010), 93. [V10] B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, P. Roussel, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava (invited); 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 55. [V9] A. Makarov, V. Sverdlov, S. Selberherr: "Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 141. [V8] F. Schanovsky, W. Gös, T. Grasser: "Mulit-Phonon Hole-Trapping from First-Principles"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 54. [V7] I. Starkov, S. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 128. [V6] M. Toledano-Luque, B. Kaczer, P. Roussel, T. Grasser, G. Groeseneken: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 28. [V5] Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina: "Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 2010-03-18 - 2010-03-19; in: "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), 69 - 72. [V4] V. Sverdlov, O. Baumgartner, S. Selberherr: "Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films"; Talk: APS March Meeting, Portland; 2010-03-15 - 2010-03-19; in: "Bulletin American Physical Society (APS March Meeting 2010)", 49/2 (2010), B9.00001. [V3] S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Palankovski: "Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications"; Keynote Lecture: International Scientific and Applied Science Conference (ET), Sozopol, Bulgaria (invited); 2009-09-22 - 2009-09-24; in: "Annual Journal of Electronics", Technical University of Sofia, 4 (2010), ISSN: 1313-1842; 12 - 17. [V2] S. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009). [V1] R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration-Induced Failure Development"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2009), ISBN: 978-1-56677-737-7; 345 - 352. Papers in Journals and Books [P41] H. Ceric, S. Selberherr: "Electromigration in Submicron Interconnect Features of Integrated Circuits"; Materials Science and Engineering R, 71 (2011), 5-6; 53 - 86. [P40] A. Dedyk, Y. Pavlova, S. Karmanenko, A. Semenov, D. Semikin, O. Pakhomov, A. Starkov, I. Starkov: "Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics"; Journal of Vacuum Science & Technology B, 29 (2011), 01A501-1 - 01A501-5. [P39] A. Garcia-Barrientos, V. Palankovski: "Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity"; Applied Physics Letters, 98 (2011), 072110-1 - 072110-3. [P38] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices"; in: "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3", Z. Karim, D. Misra, P. Srinivasan, Y. Obeng, S. De Gendt (ed.); ECS Transactions, 2011, ISBN: 978-1-56677-864-0, 185 - 192. [P37] B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, P. Roussel, M. Cho, E. Simoen, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; Journal of Vacuum Science & Technology B, 29 (2011), 01AB01-1 - 01AB01-7. [P36] A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations"; Journal of Vacuum Science & Technology B, 29 (2011), 1; 01AD03-1 - 01AD03-5. [P35] N. Neophytou, G. Klimeck, H. Kosina: "Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities"; Journal of Applied Physics, 109 (2011), 053721-1 - 053721-6. [P34] A. Makarov, V. Sverdlov, S. Selberherr: "Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations"; in: "Lecture Notes in Computer Science Vol. 6046", Springer-Verlag, Berlin-Heidelberg, 2011, ISBN: 978-3-642-18465-9, 87 - 94. [P33] N. Neophytou, H. Kosina: "Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires"; Physical Review B, 83 (2011), 245305-1 - 245305-16. [P32] M. Nedjalkov, D. Querlioz, P. Dollfus, H. Kosina: "Wigner Function Approach"; in: "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed.); Springer, 2011, (invited), ISBN: 978-1-4419-8839-3, 289 - 358. [P31] N. Neophytou, H. Kosina: "Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s*-SO Atomistic Tight-Binding Model and Boltzmann Transport"; Journal of Electronic Materials, 40 (2011), 5; 753 - 758. [P30] M. Nedjalkov, S. Selberherr, I. Dimov: "Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation"; in: "Lecture Notes in Computer Science Vol. 6046", Springer-Verlag, Berlin-Heidelberg, 2011, ISBN: 978-3-642-18465-9, 95 - 102. [P29] M. Pourfath, H. Kosina: "Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors"; in: "Encyclopedia of Nanoscience and Nanotechnology", H. Nalwa (ed.); American Scientific Publishers, 2011, ISBN: 1-58883-168-x, 541 - 581. [P28] K. Rupp, S. Selberherr: "The Economic Limit to Moore's Law"; IEEE Transactions on Semiconductor Manufacturing, 24 (2011), 1; 1 - 4. [P27] F. Schanovsky, W. Gös, T. Grasser: "Multiphonon Hole Trapping from First Principles"; Journal of Vacuum Science & Technology B, 29 (2011), 1; 01A201-1 - 01A201-5. [P26] S. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Models"; in: "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed.); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352. [P25] I. Starkov, S. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29 (2011), 01AB09-1 - 01AB09-8. [P24] T. Windbacher, V. Sverdlov, S. Selberherr: "Classical Device Modeling"; in: "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed.); Springer, 2011, (invited), ISBN: 978-1-4419-8839-3, 1 - 96. [P23] M. Toledano-Luque, B. Kaczer, P. Roussel, M. Cho, T. Grasser, G. Groeseneken: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Journal of Vacuum Science & Technology B, 29 (2011), 01AA04-1 - 01AA04-5. [P22] M. Toledano-Luque, B. Kaczer, P. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken: "Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress"; Applied Physics Letters, 98 (2011), 183506-1 - 183506-3. [P21] V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting"; in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed.); John Wiley & Sons, 2010, (invited), ISBN: 978-0-470-55137-0, 281 - 291. [P20] T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress"; Journal of Applied Physics, 107 (2010), 024508-1 - 024508-8. [P19] J. Cervenka, A. Zoric, T. Gurov, G. Arsov: "GRINKO - Grid e-Infrastructure and Networking with Kosovo"; in: "JOINT RESEARCH AND TECHNOLOGY DEVELOPMENT Projects 2007-2010", KAIP, 2010, 150 - 162. [P18] T. Aichinger, M. Nelhiebel, T. Grasser: "Energetic Distribution of Oxide Traps Created under Negative Bias Temperature Stress and their Relation to Hydrogen"; Applied Physics Letters, 96 (2010), 133511-1 - 133511-3. [P17] T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer: "Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors"; Physical Review B, 82 (2010), 245318-1 - 245318-10. [P16] A. Lugstein, M. Steinmair, A. Steiger-Thirsfeld, H. Kosina, E. Bertagnolli: "Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires"; Nano Letters, 10 (2010), 3204 - 3208. [P15] A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique"; Journal of Computational Electronics, 9 (2010), 3-4; 146 - 152. [P14] S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher: "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz"; IEICE Transactions on Electronics, E93-C (2010), 8; 1238 - 1244. [P13] W. Gös, F. Schanovsky, P. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; in: "Physics and Technology of High-k Materials 8", ECS Transactions, 2010, (invited), ISBN: 978-1-56677-822-0, 565 - 589. [P12] G. Milovanovic, H. Kosina: "A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation"; Journal of Computational Electronics, 9 (2010), 3-4; 211 - 217. [P11] N. Neophytou, H. Kosina: "Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis"; Nano Letters, 10 (2010), 4913 - 4919. [P10] M. Nedjalkov, P. Schwaha, O. Baumgartner, S. Selberherr: "Particle Model of the Scattering-Induced Wigner Function Correction"; in: "Springer Lecture Notes", Springer, 2010, ISSN: 0302-9743, 411 - 418. [P9] K. Rupp, A. Jüngel, T. Grasser: "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors"; Journal of Computational Physics, 229 (2010), 8750 - 8765. [P8] F. Schanovsky, W. Gös, T. Grasser: "An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT"; Journal of Computational Electronics (invited), 9 (2010), 3-4; 135 - 140. [P7] M. Vasicek, D. Esseni, C. Fiegna, T. Grasser: "Modeling and Simulation Approaches for Drain Current Computation"; in: "Nanoscale CMOS: Innovative Materials, Modeling and Characterization", issued by: F. Balestra; Wiley, London, 2010, (invited), ISBN: 978-1-84821-180-3, 259 - 285. [P6] A. S. Starkov, O. V. Pakhomov, I. Starkov: "Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model"; JETP Letters, 91 (2010), 10; 507 - 511. [P5] M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; in: "Springer Lecture Notes", Springer, 2010, ISSN: 0302-9743, 443 - 450. [P4] S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50 (2010), 1267 - 1272. [P3] S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Solid-State Electronics, 54 (2010), 10; 1105 - 1112. [P2] T. Grasser, W. Gös, B. Kaczer: "Critical Modeling Issues in Negative Bias Temperature Instability"; in: "215th ECS Meeting", R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (ed.); ECS Transactions, 2009, (invited), 265 - 287. [P1] R. Heinzl, P. Schwaha, S. Selberherr: "Modern Concepts for High-Perfomance Scientific Computing"; in: "Software and Data Technologies", J. Filipe, B. Shishkov, M. Helfert, L. Maciaszek (ed.); Springer, 2009, ISBN: 978-3-540-88654-9, 89 - 100. Edited Books [E3] Y. Omura, F. Gamiz, H. Ishii, J. A. Martino, B.-Y. Nguyen, J.-P. Raskin, S. Selberherr (ed.): "Advanced Semiconductor-on-Insulator Technology and Related Physics 15"; The Electrochemical Society, 2011, ISBN: 978-1-56677-866-4; 333 pages. [E2] V. Sverdlov: "Strain-Induced Effects in Advanced MOSFETs"; in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0381-4, 252 pages. [E1] R. Klima, S. Selberherr: "Programmieren in C, 3. Auflage"; Springer-Verlag, Wien - New York, Wien, 2010, ISBN: 978-3-7091-0392-0; 366 pages. Habilitation Theses [H1] V. Sverdlov: "Strain-Induced Effects in Advanced MOSFETs"; Technische Universität Wien/Fakultät für Elektrotechnik und Informationstechnik, 2011. Doctoral Theses [T4] G. Milovanovic: "Numerical Simulation of Quantum Cascade Lasers"; Reviewer: H. Kosina, D. Süss; Institut für Mikroelektronik, 2011; oral examination: 2011-03-30. [T3] Ph. Schwaha: "Beyond Atavistic Structures in Scientific Computing"; Reviewer: S. Selberherr, I. Dimov; Institut für Mikroelektronik, 2010; oral examination: 2010-12-22. [T2] S. Vitanov: "Simulation of High Electron Mobility Transistors"; Reviewer: S. Selberherr, R. Quay; Institut für Mikroelektronik, 2010; oral examination: 2010-12-20. [T1] T. Aichinger: "On the Role of Hydrogen in Silicon Device Degradation and Metalization Processing"; Reviewer: T. Grasser, H. Hutter; Institut für Mikroelektronik, 2010; oral examination: 2010-09-01. Master's Theses [D2] B. Schwarz: "Simulation of Random Dopant Fluctuations with a Quantum-Corrected Drift-Diffusion Model"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2011; final examination: 2011-6-16. [D1] D. Palankovska: "Investigation of Fast Bipolar Transistors using Simulations"; Supervisor: S. Selberherr; Institut für Mikroelektronik, 2010; final examination: 2010-03-12. Bachelor's Theses [B12] P. Taplak: "Calculation of Band Structures"; Supervisor: F. Schanovsky; Institut für Mikroelektronik, 2011. [B11] P. Ebermann: "Calculating the Largest Eigenvalue by Means of Vector Iteration"; Supervisor: K. Rupp; Institut für Mikroelektronik, 2011. [B10] R. Sonderfeld: "Modern Programming Techniques for Computational Geometry"; Supervisor: J. Weinbub; Institut für Mikroelektronik, 2011. [B9] M. Schneider: "Numerical Analysis of the Propagation of an Non-Relativistic Quantum-Mechanical Wave Packet"; Supervisor: E. Langer; Institut für Mikroelektronik, 2011. [B8] G. Pichler: "Optimization in Python"; Supervisor: F. Schanovsky; Institut für Mikroelektronik, 2011. [B7] D. Miklody: "Comparison of Recurrence Quantification Analysis and Spectral Analysis of EEG-Signals"; Supervisor: E. Langer; Institut für Mikroelektronik, 2011. [B6] G. Hannak: "Numerical Integration: Variation of Integration Steps for Single Step Integration Schemes"; Supervisor: E. Langer; Institut für Mikroelektronik, 2011. [B5] V. Sajatovic: "Incomplete LU-Preconditioning for the Iterative Solution of Linear Equation Systems"; Supervisor: K. Rupp; Institut für Mikroelektronik, 2010. [B4] W. Zischka: "Numerical Solution of the Heat Flow Equation in Two Spatial Dimensions"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B3] B. Kausl: "Numerical Procedures for Solving Non-Linear Equations"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B2] M. Fohler: "Monte Carlo Algorithm"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B1] E. Edlinger: "Orthogonalization using the Gram-Schmidt Process"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010.
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