Papers in Conference Proceedings Papers in Journals and Books Edited Books Doctoral Theses Master's Theses Bachelor's Theses	Publications Link to the publication database of the Vienna University of Technology Papers in Conference Proceedings [V119] H. Karamitaheri, N. Neophytou, H. Kosina: "Calculations of Confined Phonon Spectrum in Narrow Si Nanowires using the Valence Force Field Method"; Poster: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 2012-07-09 - 2012-07-12; in: "Book of Abstracts", (2012), 208 pages. [V118] N. Neophytou, H. Karamitaheri, H. Kosina: "Engineering the Thermoelectric Power Factor of Si and Ge Ultra Narrow 1D Nanowires and 2D Thin Layers Using Atomistic Modeling"; Talk: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 2012-07-09 - 2012-07-12; in: "Book of Abstracts", (2012), 147 pages. [V117] X. Zianni, N. Neophytou, M. Ferri, A. Roncaglia, D. Narducci: "Nanograin Effects on the Thermoelectric Properties of Poly-Si Nanowiress"; Talk: The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark; 2012-07-09 - 2012-07-12; in: "Book of Abstracts", (2012), 159 pages. [V116] J. Weinbub, K. Rupp, S. Selberherr: "A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing"; Talk: World Congress on Engineering (WCE), London, UK; 2012-07-04 - 2012-07-06; in: "Proceedings of the World Congress on Engineering (WCE)", (2012), ISBN: 978-988-19252-1-3; 1076 - 1081. [V115] N. Neophytou, H. Karamitaheri, H. Kosina: "Atomistic Design of Ultra-Narrow Silicon Nanowires for Improved Electronic and Thermoelectric Applications"; Talk: International Conference on Nanosciences and Nanotechnologies, Thessaloniki, Greece; 2012-07-03 - 2012-07-06; in: "Abstract Book", (2012), 46. [V114] H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Ab Initio Method for Electromigration Analysis"; Talk: IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits, Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0; 4 pages. [V113] L. Filipovic, S. Selberherr: "Simulation of Silicon Nanopatterning Using nc-AFM"; Poster: International Conference on non-contact Atomic Force Microscopy, Cesky Krumlov; 2012-07-01 - 2012-07-05; in: "Abstracts 15th International Conference on Non-Contact Atomic Force Microscopy (nc-AFM)", (2012), 108. [V112] A. Makarov, V. Sverdlov, S. Selberherr: "Reduction of the Switching Current in Spin Transfer Torque Random Access Memory"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 2012-06-25 - 2012-06-29; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49. [V111] K. Rupp, T. Grasser, A. Jüngel: "Recent advances in the spherical harmonics expansion of the Boltzmann transport equation"; Talk: Congresso Nationale Simai 2012, Turin, Italy; 2012-06-25 - 2012-06-28; in: "Abstracts of Congresso Nationale Simai 2012", (2012), 183. [V110] M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr: "Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs"; Talk: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 2012-06-20 - 2012-06-22; in: "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), 190 - 194. [V109] H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Memristive Charge- and Flux-Based Sensors"; Talk: 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 2012-06-12 - 2012-06-15; in: "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics (PRIME 2012)", (2012), ISBN: 978-3-8007-3442-9; 4 pages. [V108] J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser: "TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors"; Talk: European Workshop on CMOS Variability, Nice, France; 2012-06-11 - 2012-06-12; in: "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3; 4 pages. [V107] J. Weinbub: "A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing"; Talk: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 2012-06-10 - 2012-06-13; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012). [V106] J. Weinbub: "Distributed High-Performance Parallel Mesh Generation with ViennaMesh"; Talk: Workshop on the State-of-the-Art in Scientific and Parallel Computing (PARA), Helsinki, Finland; 2012-06-10 - 2012-06-13; in: "Proceedings of the International Workshop on the State-of-the-Art in Scientific and Parallel Computing", (2012). [V105] H. Ceric, R. Orio, S. Selberherr: "Atomistic Method for Analysis of Electromigration"; Poster: IEEE International Interconnect Technology Conference, San Jose, USA; 2012-06-04 - 2012-06-06; in: "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3; 3 pages. [V104] H. Karamitaheri, M. Pourfath, H. Kosina: "Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor"; Poster: Graphene Week, Delft, Netherlands; 2012-06-04 - 2012-06-08; in: "Book of Abstracts", (2012). [V103] M. Moradinasab, H. Karamitaheri, M. Pourfath, H. Kosina: "On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors"; Poster: Graphene Week, Delft, Netherlands; 2012-06-04 - 2012-06-08; in: "Book of Abstracts", (2012). [V102] M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, M. Molnar, V. Palankovski, D. Donoval, J. Carlin, N. Grandjean, J. Kuzmik: "GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access Region"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France; 2012-05-30 - 2012-06-01; in: "Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits", (2012). [V101] H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr: "Modeling of Microstructural Effects on Electromigration Failure"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan (invited); 2012-05-28 - 2012-05-30; in: "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51. [V100] H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina: "Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 77 - 78. [V99] H. Mahmoudi, V. Sverdlov, S. Selberherr: "State Drift Optimization of Memristive Stateful IMP Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 243 - 244. [V98] A. Makarov, V. Sverdlov, S. Selberherr: "Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 225 - 226. [V97] M. Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour, H. Kosina: "Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 249 - 250. [V96] M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz: "Role of the Physical Scales on the Transport Regime"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 47 - 48. [V95] H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour, H. Kosina: "A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 217 - 218. [V94] N. Neophytou, H. Kosina: "Thermoelectric Power Factor of Ultra-Narrow Silicon Nanowires"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA (invited); 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 67 - 68. [V93] D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 229 - 230. [V92] P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 177 - 178. [V91] J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr: "Towards a Free Open Source Process and Device Simulation Framework"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 141 - 142. [V90] K. Rupp: "The High-Level Linear Algebra Library ViennaCL and Its Applications"; Talk: GPU Technology Conference, San Jose, California, USA; 2012-05-14 - 2012-05-17; in: "Abstracts of GPU Technology Conference", (2012), 77. [V89] T. Grasser: "Recent Developments in Understanding the Bias Temperature Instability"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia (invited); 2012-05-13 - 2012-05-16; in: "Proceedings International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8; 315 - 322. [V88] A. Makarov, V. Sverdlov, S. Selberherr: "Recent Developments in Advanced Memory Modeling"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia (invited); 2012-05-13 - 2012-05-16; in: "Proceedings of the 28th International Conference on Microelectronics", (2012), ISBN: 978-1-4673-0235-7; 49 - 52. [V87] J. Weinbub, K. Rupp, S. Selberherr: "Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development"; Talk: C++Now, Aspen, CO, USA; 2012-05-13 - 2012-05-18; in: "Proceedings of C++Now (2012)", (2012), 10 pages. [V86] H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements"; Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 2012-04-29 - 2012-05-04; in: "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 pages. [V85] A. Makarov, S. Selberherr, V. Sverdlov: "Emerging Non-Volatile Memories for Ultra-Low Power Applications"; Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria (invited); 2012-04-23 - 2012-04-24; in: "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7; 21 - 24. [V84] T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel: "Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. [V83] J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, M. F. Bukhori, T. Grasser, A. Asenov: "Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs"; Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. [V82] T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque: "On the Frequency Dependence of the Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. [V81] B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, Bened. Schwarz, M. Bina, T. Grasser, G. Groeseneken: "The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes"; Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. [V80] F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. [V79] I. Starkov, H. Enichlmair, S. Tyaginov, T. Grasser: "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. [V78] M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2012)", (2012), ISBN: 978-1-4577-1680-5; 6 pages. [V77] A. Makarov, V. Sverdlov, S. Selberherr: "Modeling Emerging Non-Volatile Memories: Current Trends and Challenges"; Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 2012-04-01 - 2012-04-02; in: "Physics Procedia", (2012), 99 - 104. [V76] M. Lukash, K. Rupp, S. Selberherr: "Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs"; Talk: Spring Simulation Multiconference (SpringSim'12), Florida; 2012-03-26 - 2012-03-29; in: "Proceedings of the Spring Simulation Multiconference 2012", (2012), 7 pages. [V75] Ph. Tillet, K. Rupp, S. Selberherr: "An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations"; Talk: Spring Simulation Multiconference (SpringSim'12), Florida; 2012-03-26 - 2012-03-29; in: "Proceedings of the Spring Simulation Multiconference 2012", (2012), 7 pages. [V74] M. Wagner, K. Rupp, J. Weinbub: "A Comparison of Algebraic Multigrid Preconditioners using Graphics Processing Units and Multi-Core Central Processing Units"; Talk: Spring Simulation Multiconference (SpringSim'12), Florida; 2012-03-26 - 2012-03-29; in: "Proceedings of the Spring Simulation Multiconference 2012", (2012), 7 pages. [V73] A. Makarov, V. Sverdlov, S. Selberherr: "New Trends in Microelectronics: Towards an Ultimate Memory Concept"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico (invited); 2012-03-14 - 2012-03-17; in: "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6; 2 pages. [V72] N. Neophytou, H. Kosina: "Thermoelectric Properties of Low-Dimensional Si and Ge Based Nanostructures"; Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 pages. [V71] V. Sverdlov, A. Makarov, S. Selberherr: "Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer"; Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in: "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 pages. [V70] M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry: "Phonon Decoherence in Wigner-Boltzmann Transport"; Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2012-02-12 - 2012-02-17; in: "Proceedings of International Winterschool on New Developments in Solid State Physics", (2012), 61 - 62. [V69] N. Neophytou, H. Kosina: "Gate Field Induced Bandstructure and Mobility Variations in p-type Silicon Nanowires"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 131 - 132. [V68] D. Osintsev, V. Sverdlov, S. Selberherr: "Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in: "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78. [V67] S. Selberherr: "Giving Silicon a Spin"; Talk: International Conference on Enabling Science and Nanotechnology, Johor Bahru, Malaysia (invited); 2012-01-05 - 2012-01-07; in: "Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012)", (2012), 1 pages. [V66] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of ZGNR-Based Transistors"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages. [V65] H. Mahmoudi, V. Sverdlov, S. Selberherr: "Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages. [V64] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages. [V63] D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages. [V62] I. Starkov, A. S. Starkov, S. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages. [V61] S. Vitanov, J. Kuzmik, V. Palankovski: "Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC, USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages. [V60] J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken: "Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias"; Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in: "Proceedings of the 2011 IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 pages. [V59] T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, B. Kaczer: "Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps"; Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in: "Proceedings of the 2011 IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 pages. [V58] H. Karamitaheri, M. Pourfath, N. Neophytou, M. Pazoki, H. Kosina: "First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications"; Talk: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 2011-12-05 - 2011-12-07; in: "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5; 19 - 22. [V57] G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser: "Understanding Temperature Acceleration for NBTI"; Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in: "Proceedings of the 2011 IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 pages. [V56] K. Rupp, T. Grasser, A. Jüngel: "On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries"; Talk: International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in: "Proceedings of the 2011 IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2; 4 pages. [V55] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 pages. [V54] D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov: "An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in: "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011)", (2011), 2 pages. [V53] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Transport Gap Engineering in Zigzag Graphene Nanoribbons"; Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 2011-11-21 - 2011-11-25; in: "Poster Abstracts Book (TNT 2011)", (2011), 2. [V52] A. Makarov, S. Selberherr, V. Sverdlov: "Modeling of Advanced Memories"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (invited); 2011-11-17 - 2011-11-18; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 pages. [V51] R. Orio, S. Selberherr: "Compact Modeling of Interconnect Reliability"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (invited); 2011-11-17 - 2011-11-18; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 pages. [V50] A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr: "Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations"; Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in: "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3; 177 - 181. [V49] M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser: "Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in: "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 27 - 31. [V48] B. Kaczer, M. Toledano-Luque, J. Franco, T. Grasser, Ph. J. Roussel, V. V. A. Camargo, S. Mahato, E. Simoen, F. Catthoor, G.I. Wirth, G. Groeseneken: "Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA (invited); 2011-10-16 - 2011-10-20; in: "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 32. [V47] F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in: "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 17 - 21. [V46] R. Southwick III, S. T. Purnell, B. A. Rapp, R. J. Thompson, S. K. Pugmire, B. Kaczer, T. Grasser, B. Knowlton: "Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in: "Final Report of IEEE International Integrated Reliability Workshop (IIRW 2011)", (2011), 12 - 16. [V45] R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 1573 - 1577. [V44] G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 1530 - 1534. [V43] S. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), 1525 - 1529. [V42] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5; 2 pages. [V41] N. Neophytou, H. Kosina: "Thermoelectric Power Factor of Low Dimensional Silicon Nanowires"; Talk: European Conference on Thermoelectrics, Thessaloniki, Greece; 2011-09-28 - 2011-09-30; in: "Conference Proceedings of 9th European Conference on Thermoelectrics", (2011), 4 pages. [V40] K. Rupp, A. Jüngel, T. Grasser: "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors"; Talk: Facing the Multicore Challenge II, Karlsruhe, Germany; 2011-09-28 - 2011-09-30; in: "Proceedings of Facing the Multicore Challenge II", (2011), 11 pages. [V39] I. Starkov, H. Ceric: "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in: "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91. [V38] W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria (invited); 2011-09-25 - 2011-09-30; in: "GADEST 2011: Abstract Booklet", (2011), 153. [V37] I. Starkov, S. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in: "GADEST 2011: Abstract Booklet", (2011), 105 - 106. [V36] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer"; Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in: "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7; 444. [V35] S. Vitanov, J. Kuzmik, V. Palankovski: "Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs"; Talk: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 2011-09-14 - 2011-09-16; in: "Annual Journal of Electronics", (2011), 113 - 116. [V34] S. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in: "Proceedings of the 41st European Solid-State Device Research Conference", (2011), 151 - 154. [V33] O. Baumgartner, Z. Stanojevic, H. Kosina: "Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 91 - 94. [V32] H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr: "Multilevel Simulation for the Investigation of Fast Diffusivity Paths"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 135 - 138. [V31] L. Filipovic, S. Selberherr: "A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 307 - 310. [V30] Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser: "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 11 - 14. [V29] N. Neophytou, H. Kosina: "Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 31 - 34. [V28] R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Lifetime Estimation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 23 - 26. [V27] D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 59 - 62. [V26] K. Rupp, T. Grasser, A. Jüngel: "Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 151 - 155. [V25] K. Rupp, T. Grasser, A. Jüngel: "Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 147 - 150. [V24] F. Schanovsky, O. Baumgartner, T. Grasser: "Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 15 - 18. [V23] Z. Stanojevic, M. Karner, K. Schnass, Ch. Kernstock, O. Baumgartner, H. Kosina: "A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 143 - 146. [V22] I. Starkov, H. Ceric, S. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 127 - 130. [V21] S. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 123 - 126. [V20] J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr: "High-Quality Mesh Generation Based on Orthogonal Software Modules"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices", (2011), ISBN: 978-1-61284-418-3; 139 - 142. [V19] R. Orio, H. Ceric, S. Selberherr: "Modeling Electromigration Lifetimes of Copper Interconnects"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2011), ISBN: 978-1-56677-900-5; 163 - 169. [V18] D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in: "Proceedings Intl.Symposium on Microelectronics Technology and Devices (SBMicro)", (2011), ISBN: 978-1-56677-900-5; 155 - 162. [V17] O. Baumgartner, Z. Stanojevic, H. Kosina: "Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers"; Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 2011-08-29 - 2011-09-02; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 21. [V16] L. Filipovic, S. Selberherr: "A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator"; Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 2011-08-29 - 2011-09-02; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 30. [V15] P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Monte Carlo Investigations of Electron Decoherence due to Phonons"; Talk: Seminar on Monte Carlo Methods (MCM), Borovets; 2011-08-29 - 2011-09-02; in: "Abstracts IMACS Seminar on Monte Carlo Methods (MCM)", (2011), 48. [V14] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238. [V13] D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in: "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229. [V12] J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr: "A Generic High-Quality Meshing Framework"; Talk: Symposium on Trends in Unstructured Mesh Generation (Meshtrends), Minneapolis, USA; 2011-07-25 - 2011-07-28; in: "Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM)", (2011). [V11] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer"; Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011). [V10] N. Neophytou, H. Kosina: "Thermoelectric Power Factor of Narrow Silicon Nanowires from Atomistic Considerations"; Talk: 30th International Conference on Thermoelectrics, Michigan, USA; 2011-07-17 - 2011-07-21; in: "Book of Abstracts", (2011). [V9] D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport in Spin Field-Effect Transistors Built on Silicon"; Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in: "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011). [V8] H. Ceric, R. Orio, S. Selberherr: "Integration of Atomistic and Continuum-Level Electromigration Models"; Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 2011-07-04 - 2011-07-07; in: "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7; 4 pages. [V7] I. Starkov, H. Ceric, S. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in: "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0; 4 pages. [V6] M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, T. Y. Hoffmann, G. Groeseneken: "From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation"; Talk: Symposium on VLSI Technology, Kyoto, Japan; 2011-06-14 - 2011-06-16; in: "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6; 2 pages. [V5] T. Grasser: "Charge Trapping in Oxides From RTN to BTI"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-10 - 2011-04-14; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2011)", (2011). [V4] D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr: "Ballistic Spin Field Effect Transistor Based on Silicon Nanowires"; Talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 - 2011-03-25; in: "Bulletin American Physical Society (APS March Meeting 2011)", (2011). [V3] V. Sverdlov, S. Selberherr: "Modeling of Modern MOSFETs with Strain"; Talk: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina (invited); 2010-11-01 - 2010-11-03; in: "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3; 1 - 11. [V2] K. Rupp, J. Weinbub, F. Rudolf: "Automatic Performance Optimization in ViennaCL for GPUs"; Talk: Workshop on Parallel/High-Performance Object-Oriented Scientific Computing, Reno, Nevada, USA; 2010-10-17 - 2010-10-21; in: "Proceedings of the 9th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing", (2010), 6 pages. [V1] R. Huang, W. Robl, G. Dehm, H. Ceric, T. Detzel: "Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature"; Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 1 - 6. Papers in Journals and Books [P53] H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Microelectronics Reliability (invited), 52 (2012), 1532 - 1538. [P52] J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken: "Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs"; IEEE Electron Device Letters, 33 (2012), 6; 779 - 781. [P51] L. Filipovic, S. Selberherr: "A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy"; in: "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed.); Springer, 2012, ISBN: 978-3-642-29842-4, 447 - 454. [P50] T. Grasser: "Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities"; Microelectronics Reliability (invited), 52 (2012), 1; 39 - 70. [P49] H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina: "Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111 (2012), 5; 054501-1 - 054501-9. [P48] H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina: "Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method"; Journal of Computational Electronics (invited), 11 (2012), 1; 14 - 21. [P47] J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski: "Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors"; Japanese Journal of Applied Physics, 51 (2012), 054102-1 - 054102-5. [P46] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling"; IEEE Transactions on Magnetics, 48 (2012), 4; 1289 - 1292. [P45] A. Makarov, V. Sverdlov, S. Selberherr: "Emerging Memory Technologies: Trends, Challenges, and Modeling Methods"; Microelectronics Reliability (invited), 52 (2012), 4; 628 - 634. [P44] J.-F. Mennemann, A. Jüngel, H. Kosina: "Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator"; in: "ASC Report 17/2012", issued by: Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2012, ISBN: 978-3-902627-05-6, 1 - 30. [P43] D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins"; in: "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed.); Springer, 2012, ISBN: 978-3-642-29842-4, 630 - 637. [P42] M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina: "Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111 (2012), 7; 074318-1 - 074318-9. [P41] H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices"; Journal of Applied Physics, 111 (2012), 093512-1 - 093512-6. [P40] N. Neophytou, H. Kosina: "Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors"; IEEE Electron Device Letters, 33 (2012), 5; 652 - 654. [P39] K. Rupp, A. Jüngel, T. Grasser: "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors"; in: "Lecture Notes in Computer Science, Vol. 7174", R. Keller, D. Kramer, J.-Ph. Weiss (ed.); Springer, 2012, ISBN: 978-3-642-30396-8, 147 - 157. [P38] N. Neophytou, H. Kosina: "Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands"; Solid-State Electronics, 70 (2012), 81 - 91. [P37] N. Neophytou, H. Kosina: "Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels"; Journal of Applied Physics, 112 (2012), 2; 024305-1 - 024305-6. [P36] N. Neophytou, H. Kosina: "Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires"; Journal of Computational Electronics (invited), 11 (2012), 1; 29 - 44. [P35] N. Neophytou, H. Kosina: "On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires"; Journal of Electronic Materials, 41 (2012), 6; 1305 - 1311. [P34] K. Rupp, A. Jüngel, T. Grasser: "Deterministic Numerical Solution of the Boltzmann Transport Equation"; in: "Progress in Industrial Mathematics at ECMI 2010", R. Keller, D. Kramer, J.-Ph. Weiss (ed.); Springer, 2012, ISBN: 978-3-642-25099-6, 53 - 59. [P33] D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels"; Solid-State Electronics, 71 (2012), 25 - 29. [P32] P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Phonon-Induced Decoherence in Electron Evolution"; in: "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed.); Springer, 2012, ISBN: 978-3-642-29842-4, 472 - 479. [P31] F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser: "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures"; Journal of Computational Electronics (2012). [P30] Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina: "Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement"; Solid-State Electronics, 70 (2012), 73 - 80. [P29] M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser: "Applicability of Macroscopic Transport Models to Decananometer MOSFETs"; IEEE Transactions on Electron Devices, 59 (2012), 3; 639 - 646. [P28] J. Weinbub, K. Rupp, S. Selberherr: "Towards Distributed Heterogenous High-Performance Computing with ViennaCL"; in: "Lecture Notes in Computer Science, Vol. 7116", I. Lirkov, S. Margenov, J. Wasniewski (ed.); Springer, 2012, ISBN: 978-3-642-29842-4, 359 - 367. [P27] S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr: "Physics-Based Modeling of GaN HEMTs"; IEEE Transactions on Electron Devices, 59 (2012), 3; 685 - 693. [P26] A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 59 (2012), 2; 433 - 440. [P25] O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films"; IEEE Transactions on Nanotechnology, 10 (2011), 4; 737 - 743. [P24] J. Cervenka, H. Kosina, S. Selberherr, J. Zhang, N. Hrauda, J. Stangl, G. Bauer, G. Vastola, A. Marzegalli, F. Montalenti, L. Miglio: "Strained MOSFETs on Ordered SiGe Dots"; Solid-State Electronics, 65-66 (2011), 81 - 87. [P23] J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken: "On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs"; Microelectronic Engineering, 88 (2011), 7; 1388 - 1391. [P22] W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Solid State Phenomena (invited), 178-179 (2011), 473 - 482. [P21] T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel: "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps"; IEEE Transactions on Electron Devices (invited), 58 (2011), 11; 3652 - 3666. [P20] R. Heinzl, P. Schwaha: "A Generic Topology Library"; Science of Computer Programming, 76 (2011), 4; 324 - 346. [P19] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices"; Journal of Applied Physics, 110 (2011), 5; 054506-1 - 054506-6. [P18] H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina: "Graphene-Based Antidots for Thermoelectric Applications"; Journal of the Electrochemical Society, 158 (2011), 12; K213 - K216. [P17] J. Lorenz, E. Bär, T. Clees, P. Evanschitzky, R. Jancke, C. Kampen, U. Paschen, C. Salzig, S. Selberherr: "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Results"; IEEE Transactions on Electron Devices (invited), 58 (2011), 8; 2227 - 2234. [P16] J. Lorenz, E. Bär, T. Clees, R. Jancke, C. Salzig, S. Selberherr: "Hierarchical Simulation of Process Variations and their Impact on Circuits and Systems: Methodology"; IEEE Transactions on Electron Devices (invited), 58 (2011), 8; 2218 - 2226. [P15] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer"; Physica Status Solidi - Rapid Research Letters, 5 (2011), 12; 420 - 422. [P14] N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr: "Performance Assessment of Nanoscale Field Effect Diodes"; IEEE Transactions on Electron Devices, 58 (2011), 8; 2378 - 2384. [P13] N. Neophytou, H. Kosina: "Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation"; Physical Review B, 84 (2011), 085313-1 - 085313-15. [P12] N. Neophytou, H. Kosina: "Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement"; Applied Physics Letters, 99 (2011), 092110-1 - 092110-3. [P11] R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Microelectronics Reliability, 51 (2011), 1573 - 1577. [P10] G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Microelectronics Reliability, 51 (2011), 1530 - 1534. [P9] H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, R. Sarvari: "Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity"; Journal of Applied Physics, 110 (2011), 6; 064320-1 - 064320-6. [P8] A. S. Starkov, O. V. Pakhomov, I. Starkov: "Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field"; Technical Physics Letters, 79 (2011), 12; 1139 - 1141. [P7] I. Starkov, S. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179 (2011), 267 - 272. [P6] M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken: "Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics"; Microelectronic Engineering, 88 (2011), 1243 - 1246. [P5] S. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51 (2011), 1525 - 1529. [P4] A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 58 (2011), 11; 3725 - 3735. [P3] R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel: "Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing"; Measurement Science & Technology, 21 (2010), 5; 55702 - 55710. [P2] M. Nedjalkov, H. Kosina, P. Schwaha: "Device Modeling in the Wigner Picture"; Journal of Computational Electronics, 9 (2010), 3-4; 218 - 223. [P1] S. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko: "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures"; Materials Science in Semiconductor Processing, 13 (2010), 405 - 410. Edited Books [E1] S.-M Hong, A.-T Pham, C. Jungemann: "Deterministic Solvers for the Boltzmann Transport Equation"; in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0777-5, 227 pages. Doctoral Theses [T3] W. Gös: "Hole Trapping and the Negative Bias Temperature Instability"; Reviewer: T. Grasser, D. Süss; Institut für Mikroelektronik, 2011; oral examination: 2011-12-22. [T2] K. Rupp: "Deterministic Numerical Solution of the Boltzmann Transport Equation"; Reviewer: T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2011; oral examination: 2011-12-19. [T1] Ph. Hehenberger: "Advanced Characterization of the Bias Temperature Instability"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2011; oral examination: 2011-12-14. Master's Theses [D4] M. Wagner: "Algebraic Multigrid Methods on Parallel Architectures"; Supervisor: E. Langer, K. Rupp; Institut für Mikroelektronik, 2011; final examination: 2011-11-25. [D3] M. Waltl: "Change Point Detection in Time Dependent Defect Spectroscopy Data"; Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2011; final examination: 2011-11-25. [D2] W. H. Zisser: "Investigation of Copper Crystals Using MD Simulations"; Supervisor: E. Langer, H. Ceric; Institut für Mikroelektronik, 2011; final examination: 2011-10-12. [D1] P. Lagger: "Scattering Operators for the Spherical Harmonics Expansion of the Boltzmann Transport Equation"; Supervisor: T. Grasser, K. Rupp; Institut für Mikroelektronik, 2011; final examination: 2011-10-07. Bachelor's Theses [B8] E. Arnautovic: "The Method of Conjugate Gradients and its Parallelization on Distributed Systems"; Supervisor: K. Rupp; Institut für Mikroelektronik, 2010. [B7] G. Mader: "The Symmetric Lanczos Algorithm for the Numerical Calculation of Eigenvalues"; Supervisor: K. Rupp; Institut für Mikroelektronik, 2010. [B6] R. M. Mörth: "Comparison of Pivot Strategies on the Basis of the Gaussian Elimination"; Supervisor: K. Rupp; Institut für Mikroelektronik, 2010. [B5] M. Plainer: "Numerical Solution of the Stationary, Two-Dimensional Poisson Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B4] M. Meyer: "Ewald Summation"; Supervisor: F. Schanovsky; Institut für Mikroelektronik, 2010. [B3] Ph. Grabenweger: "Comparison of Algorithms for Reducing the Bandwidth of Matrices in the Finite Element Method"; Supervisor: K. Rupp; Institut für Mikroelektronik, 2010. [B2] T. Winter: "Calculation of the Inverse of a Nonsingular Quadratic Matrix"; Supervisor: E. Langer; Institut für Mikroelektronik, 2010. [B1] M. Wastl: "Calculation of the One-Dimensional Overlap Integrals of the Harmonic Oscillator"; Supervisor: F. Schanovsky; Institut für Mikroelektronik, 2010.
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