• [BK-4] Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen:
  "Advanced CMOS-Compatible Semiconductor Devices 17";
  The Electrochemical Society, (2015), ISBN: 978-1-62332-238-0, 365 page(s).
  
  
• [BK-3] T. Grasser:
  "Hot Carrier Degradation in Semiconductor Devices";
  Springer International Publishing, (2014), ISBN: 978-3-319-08993-5, 517 page(s) doi:10.1007/978-3-319-08994-2.
  
  
• [BK-2] Yu.Yu. Illarionov:
  "Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
  Typography of St-Petersburg State Polytechnical University, St. Petersburg, (2014), 20 page(s).
  
  
• [BK-1] V. Sverdlov, B. Jonker, K. Ishibashu, S.M. Goodnick, S. Selberherr:
  "Innovative Nanoscale Devices and Systems";
  Society for Micro- and Nanoelectronics, (2014), ISBN: 978-3-901578-28-1, 68 page(s).
  
  

• [PJ-50] M. Asad, M. Sheikhi, M. Pourfath, M. Moradi:
  "High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs";
  Sensors and Actuators B: Chemical, 210 (2015), 1 - 8 doi:10.1016/j.snb.2014.12.086.
  
  
• [PJ-49] E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Lacerda de Orio, S. Selberherr:
  "Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
  Microelectronic Engineering, 137 (2015), 141 - 145 doi:10.1016/j.mee.2014.11.014.
  
  
• [PJ-48] R. Coppeta, D. Holec, H. Ceric, T. Grasser:
  "Evaluation of Dislocation Energy in Thin Films";
  Philosophical Magazine, 95 (2015), 186 - 209 doi:10.1080/14786435.2014.994573.
  
  
• [PJ-47] A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
  "Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide";
  Microelectronic Engineering, 147 (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073.
  
  
• [PJ-46] M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari:
  "Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain";
  Physical Review B, 91 (2015), 1154121 - 1154128 doi:10.1103/PhysRevB.91.115412.
  
  
• [PJ-45] P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr, I. Dimov:
  "Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition";
  Journal of Computational Electronics, 14 (2015), 151 - 162 doi:10.1007/s10825-014-0635-3.
  
  
• [PJ-44] L. Filipovic, S. Selberherr:
  "Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors";
  Sensors, 15 (2015), 7206 - 7227 doi:10.3390/s150407206.
  
  
• [PJ-43] N. Ghobadi, M. Pourfath:
  "Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing";
  IEEE Electron Device Letters, 36 (2015), 280 - 282 doi:10.1109/LED.2014.2388452.
  
  
• [PJ-42] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
  Microelectronic Engineering, 147 (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072.
  
  
• [PJ-41] Yu.Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
  "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
  Current Applied Physics, 15 (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015.
  
  
• [PJ-40] H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou:
  "Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons";
  Physical Review B, 91 (2015), 165410-1 - 165410-15 doi:10.1103/PhysRevB.91.165410.
  
  
• [PJ-39] M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
  "Numerical Study of Graphene Superlattice-Based Photodetectors";
  IEEE Transactions on Electron Devices, 62 (2015), 593 - 600 doi:10.1109/TED.2014.2383354.
  
  
• [PJ-38] M. Moradinasab, M. Pourfath, H. Kosina:
  "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers";
  IEEE Journal of Quantum Electronics, 51 (2015), 1 - 7 doi:10.1109/JQE.2014.2373171.
  
  
• [PJ-37] N. Sefidmooye Azar, M. Pourfath:
  "A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites";
  IEEE Transactions on Electron Devices, 62 (2015), 1584 - 1589 doi:10.1109/TED.2015.2411992.
  
  
• [PJ-36] J. M. Sellier, M. Nedjalkov, I. Dimov:
  "An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism";
  Physics Reports, 577 (2015), 1 - 34 doi:10.1016/j.physrep.2015.03.001.
  
  
• [PJ-35] J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
  "A Comparison of Approaches for the Solution of the Wigner Equation";
  Mathematics and Computers in Simulation, 107 (2015), 108 - 119 doi:10.1016/j.matcom.2014.06.001.
  
  
• [PJ-34] P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
  "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
  IEEE Transactions on Electron Devices, 62 (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282.
  
  
• [PJ-33] Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause:
  "Consistent Low-Field Mobility Modeling for Advanced MOS Devices";
  Solid-State Electronics, 0 (2015), 1 - 9 doi:10.1016/j.sse.2015.02.008.
  
  
• [PJ-32] V. Sverdlov, S. Selberherr:
  "Silicon Spintronics: Progress and Challenges";
  Physics Reports, 585 (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002.
  
  
• [PJ-31] S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser:
  "On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation";
  Japanese Journal of Applied Physics, 54 (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18.
  
  
• [PJ-30] M. I. Vexler, Yu.Yu. Illarionov, S. E. Tyaginov, T. Grasser:
  "Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices";
  Semiconductors (Physics of Semiconductor Devices), 49 (2015), 259 - 263 doi:10.1134/S1063782615020207.
  
  
• [PJ-29] T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr:
  "Modelling of Multipurpose Spintronic Devices";
  International Journal of Nanotechnology, 12 (2015), 313 - 331 doi:10.1504/IJNT.2015.067215.
  
  
• [PJ-28] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
  Solid-State Electronics, 108 (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023.
  
  
• [PJ-27] M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath:
  "High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles";
  Sensors and Actuators A: Physical, 220 (2014), 213 - 220 doi:10.1016/j.sna.2014.10.017.
  
  
• [PJ-26] M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
  "Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
  IEEE Transactions on Electron Devices, 61 (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575.
  
  
• [PJ-25] V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth:
  "Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics";
  Microelectronics Reliability, 54 (2014), 2364 - 2370.
  
  
• [PJ-24] H. Ceric, R. Lacerda de Orio, W. H. Zisser, S. Selberherr:
  "Microstructural Impact on Electromigration: A TCAD Study";
  Facta universitatis - series: Electronics and Energetics, 27 (2014), 1 - 11.
  
  
• [PJ-23] L. Filipovic, S. Selberherr:
  "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
  Microelectronics Reliability, 54 (2014), 1953 - 1958 doi:10.1016/j.microrel.2014.07.014.
  
  
• [PJ-22] N. Ghobadi, M. Pourfath:
  "On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors";
  Journal of Applied Physics, 116 (2014), 1845061 - 1845067 doi:10.1063/1.4901584.
  
  
• [PJ-21] M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath:
  "Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design";
  IEEE Transactions on Electron Devices, 61 (2014), 4000 - 4006 doi:10.1109/TED.2014.2362774.
  
  
• [PJ-20] J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Spin Injection in a Semiconductor Through a Space-Charge Layer";
  Solid-State Electronics, 101 (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035.
  
  
• [PJ-19] T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
  "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
  IEEE Transactions on Electron Devices, 61 (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578.
  
  
• [PJ-18] Yu.Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, T. Grasser:
  "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
  Applied Physics Letters, 105 (2014), 1435071 - 1435075.
  
  
• [PJ-17] J. Kuzmik, M. Tapajna, L. Válik, M. Molnar, D. Donoval, C. Fleury, D. Pogany, G. Strasser, O. Hilt, F. Brunner, J. Würfl:
  "Self-Heating in GaN Transistors Designed for High-Power Operation";
  IEEE Transactions on Electron Devices, 61 (2014), 3429 - 3434 doi:10.1109/TED.2014.2350516.
  
  
• [PJ-16] B. Lorenzi, D. Narducci, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
  "Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids";
  Journal of Electronic Materials, 43 (2014), 3812 - 3816 doi:10.1007/s11664-014-3170-x.
  
  
• [PJ-15] A. Makarov, V. Sverdlov, S. Selberherr:
  "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
  International Journal of High Speed Electronics and Systems, 23 (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141.
  
  
• [PJ-14] A. Mojibpour, M. Pourfath, H. Kosina:
  "Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers";
  Optics Express, 22 (2014), 20607 - 20612 doi:10.1364/OE.22.020607.
  
  
• [PJ-13] D. Narducci, B. Lorenzi, X. Zianni, N. Neophytou, S. Frabboni, G. Gazzadi, A. Roncaglia, F. Suriano:
  "Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys";
  Physica Status Solidi A, 211 (2014), 1255 - 1258 doi:10.1002/pssa.201300130.
  
  
• [PJ-12] N. Neophytou, H. Kosina:
  "Gated Si Nanowires for Large Thermoelectric Power Factors";
  Applied Physics Letters, 105 (2014), 073119-1 - 5 doi:10.1063/1.4893977.
  
  
• [PJ-11] P. Reininger, B. Schwarz, H. Detz, D. MacFarland, T. Zederbauer, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
  "Diagonal-Transition Quantum Cascade Detector";
  Applied Physics Letters, 105 (2014), 1 - 4 doi:10.1063/1.4894767.
  
  
• [PJ-10] G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
  "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors";
  Microelectronics Reliability, 54 (2014), 2310 - 2314 doi:10.1016/j.microrel.2014.07.040.
  
  
• [PJ-9] K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser:
  "Achieving Portable High Performance for Iterative Solvers on Accelerators";
  Proceedings in Applied Mathematics and Mechanics, 14 (2014), 963 - 964 doi:10.1002/pamm.201410462.
  
  
• [PJ-8] S. Soleimani Kahnoj, S. Touski, M. Pourfath:
  "The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons";
  Applied Physics Letters, 105 (2014), 1035021 - 1035024 doi:10.1063/1.4894859.
  
  
• [PJ-7] M. Tapajna, N. Killat, V. Palankovski, D. Gregusova, K. Cico, J. Carlin, N. Grandjean, M. Kuball, J. Kuzmik:
  "Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors";
  IEEE Transactions on Electron Devices, 61 (2014), 2793 - 2801 doi:10.1109/TED.2014.2332235.
  
  
• [PJ-6] S. E. Tyaginov, Yu.Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser:
  "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric";
  Journal of Computational Electronics, 1 (2014), 1 - 6 doi:10.1007/s10825-014-0593-9.
  
  
• [PJ-5] S. E. Tyaginov, Y. Wimmer, T. Grasser:
  "Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment";
  Facta Universitatis, 27 (2014)(invited), 479 - 508 doi:10.2298/FUEE1404479T.
  
  
• [PJ-4] J. Weinbub, A. Hössinger:
  "Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method";
  Journal of Computational Electronics, 13 (2014), 877 - 884 doi:10.1007/s10825-014-0604-x.
  
  
• [PJ-3] J. Weinbub, K. Rupp, S. Selberherr:
  "ViennaX: A Parallel Plugin Execution Framework for Scientific Computing";
  Engineering with Computers, 30 (2014), 651 - 668 doi:10.1007/s00366-013-0314-1.
  
  
• [PJ-2] S. Wolf, N. Neophytou, Z. Stanojevic, H. Kosina:
  "Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes";
  Journal of Electronic Materials, 43 (2014), 3870 - 3875 doi:10.1007/S11664-014-3324-X.
  
  
• [PJ-1] W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
  "Electromigration Reliability of Open TSV Structures";
  Microelectronics Reliability, 54 (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099.
  
  

• [BC-17] M. Bina, K. Rupp:
  "The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation";
  in: "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, 197 - 220 doi:10.1007/978-3-319-08994-2_6.
  
  
• [BC-16] J. Cervenka, P. Ellinghaus, M. Nedjalkov:
  "Deterministic Solution of the Discrete Wigner Equation";
  in: "Numerical Methods and Applications", I. Dimov, S. Fidanova, I. Lirkov (ed); Springer International Publishing, 2015, ISBN: 978-3-319-15584-5, 149 - 156 doi:10.1007/978-3-319-15585-2_17.
  
  
• [BC-15] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
  in: "Lecture Notes in Computer Science, Vol. 8962", I. Dimov, S. Fidanova, I. Lirkov (ed); Springer International Publishing, 2015, ISBN: 978-3-319-15584-5, 27 - 33 doi:10.1007/978-3-319-15585-2_3.
  
  
• [BC-14] L. Filipovic, S. Selberherr:
  "Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
  in: "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 243 - 250 doi:10.1149/06605.0243ecst.
  
  
• [BC-13] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
  in: "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 233 - 240 doi:10.1149/06605.0233ecst.
  
  
• [BC-12] A. Makarov, V. Sverdlov, S. Selberherr:
  "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer";
  in: "Frontiers in Electronics", S. Cristoloveanu, M. Shur (ed); World Scientific Publishing Co., 2015, ISBN: 978-981-4651-76-9, 1 - 15 doi:10.1142/9789814656917_0001.
  
  
• [BC-11] V. Sverdlov, S. Selberherr:
  "Spin-Based Silicon and CMOS-Compatible Devices";
  in: "Advanced CMOS-Compatible Semiconductor Devices 17", Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-238-0, 223 - 231 doi:10.1149/06605.0223ecst.
  
  
• [BC-10] S. E. Tyaginov:
  "Physics-Based Modeling of Hot-Carrier Degradation";
  in: "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, 105 - 150 doi:10.1007/978-3-319-08994-2_4.
  
  
• [BC-9] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Novel Buffered Magnetic Logic Gate Grid";
  in: "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5", F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (ed); The Electrochemical Society, 2015, ISBN: 978-1-62332-237-3, 295 - 303 doi:10.1149/06604.0295ecst.
  
  
• [BC-8] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Efficient Calculation of the Two-Dimensional Wigner Potential";
  in: "The 17^th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 3 doi:10.1109/IWCE.2014.6865812.
  
  
• [BC-7] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Implications of the Coherence Length on the Discrete Wigner Potential";
  in: "The 17^th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 3 doi:10.1109/IWCE.2014.6865852.
  
  
• [BC-6] J. Ghosh, V. Sverdlov, S. Selberherr:
  "Spin Diffusion and the Role of Screening Effects in Semiconductors";
  in: "The 17^th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865825.
  
  
• [BC-5] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing";
  in: "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing", T. Brozek (ed); CRC Press, 2014, ISBN: 978-1-4822-1490-1, 221 - 259.
  
  
• [BC-4] D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
  "Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films";
  in: "The 17^th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865824.
  
  
• [BC-3] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs";
  in: "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed); Springer International Publishing, 2014, ISBN: 978-3-319-08803-7, 127 - 149 doi:10.1007/978-3-319-08804-4_7.
  
  
• [BC-2] V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
  "Modeling Silicon Spintronics";
  in: "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed); Mathematics and Computers in Science and Engineering Series | 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198.
  
  
• [BC-1] T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
  in: "The 17^th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865862.
  
  

• [CP-97] A. Harrer, P. Reininger, R. Gansch, B. Schwarz, D. MacFarland, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
  "Quantum Cascade Detectors for Sensing Applications";
  Talk: ICAVS8, Wien; 12.07.2015 - 17.07.2015; (2015).
  
  
• [CP-96] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures";
  Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 29.06.2015 - 02.07.2015; in "Book of Abstracts 19^th Conference on Insulating Films on Semiconductors", (2015), 235 - 236.
  
  
• [CP-95] S. Papaleo, W. H. Zisser, H. Ceric:
  "Effects of the Initial Stress at the Bottom of Open TSVs";
  Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in "Proceedings of the IEEE 22^nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015).
  
  
• [CP-94] M. Rovitto, W. H. Zisser, H. Ceric:
  "Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs";
  Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 29.06.2015 - 02.07.2015; in "Proceedings of the IEEE 22^nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015).
  
  
• [CP-93] V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
  "Silicon Spintronics: Recent Advances and Challenges";
  Talk: International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 29.06.2015 - 30.06.2015; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015).
  
  
• [CP-92] M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
  "Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations";
  Talk: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 28.06.2015 - 02.07.2015; in "Proceedings of the 34^th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1.
  
  
• [CP-91] B. Ullmann, M. Waltl, T. Grasser:
  "Characterization of the Permanent Component of MOSFET Degradation Mechanisms";
  Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 25.06.2015 - 26.06.2015; in "VSS - VIENNA young SCIENTISTS SYMPOSIUM, June 25-26 2015", (2015), 36 - 37.
  
  
• [CP-90] V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr:
  "Giant Spin Lifetime Enhancement";
  Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63.
  
  
• [CP-89] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "A Universal Nonvolatile Processing Environment";
  Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 21.06.2015 - 26.06.2015; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62.
  
  
• [CP-88] J. Cervenka, P. Ellinghaus:
  "Preconditioned Deterministic Solver for the Wigner Equation";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 31.
  
  
• [CP-87] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "The Influence of Electrostatic Lenses on Wave Packet Dynamics";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 39 - 40.
  
  
• [CP-86] M. Nedjalkov, P. Ellinghaus, S. Selberherr:
  "The Aharanov-Bohm Effect from a Phase Space Perspective";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 59 - 60.
  
  
• [CP-85] D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr:
  "Spin Lifetime in MOSFETs: A High Performance Computing Approach";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61.
  
  
• [CP-84] F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, S. Selberherr:
  "Mesh Healing for TCAD Simulations";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 66.
  
  
• [CP-83] V. Sverdlov, S. Selberherr:
  "Spin-Based CMOS-Compatible Devices";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; (invited) 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 69.
  
  
• [CP-82] M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
  "Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 70.
  
  
• [CP-81] J. Weinbub, P. Ellinghaus, S. Selberherr:
  "Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 08.06.2015 - 12.06.2015; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 73.
  
  
• [CP-80] L. Filipovic, S. Selberherr:
  "Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors";
  Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227^th ECS Meeting (ECS)", (2015), 2.
  
  
• [CP-79] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films";
  Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227^th ECS Meeting (ECS)", (2015), 2.
  
  
• [CP-78] V. Sverdlov, S. Selberherr:
  "Spin-Based Silicon and CMOS-Compatible Devices";
  Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; (invited) 24.05.2015 - 28.05.2015; in "Proceedings of the 227^th ECS Meeting (ECS)", (2015), 2.
  
  
• [CP-77] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Novel Buffered Magnetic Logic Gate Grid";
  Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 24.05.2015 - 28.05.2015; in "Proceedings of the 227^th ECS Meeting (ECS)", (2015), 2.
  
  
• [CP-76] V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
  "Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films";
  Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 20.05.2015 - 22.05.2015; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), 58.
  
  
• [CP-75] H. Ceric, S. Selberherr:
  "Compact Model for Solder Bump Electromigration Failure";
  Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 18.05.2015 - 21.05.2015; in "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), 159 - 161.
  
  
• [CP-74] P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
  "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
  Talk: International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 10.05.2015 - 14.05.2015; in "Proceedings of the 2015 IEEE 27^th International Symposium on Power Semiconductor Devices & IC's (ISPSD)", (2015), 389 - 392 doi:10.1109/ISPSD.2015.7123471.
  
  
• [CP-73] L. Filipovic, S. Selberherr:
  "Kinetics of Droplet Motion During Spray Pyrolysis";
  Talk: Energy Materials Nanotechnology (EMN East Meeting), Phuket, Thailand; (invited) 08.05.2015 - 11.05.2015; in "EMN Meeting on Droplets 2015 Program and Abstract Book", (2015), 127 - 128.
  
  
• [CP-72] V. Sverdlov, S. Selberherr:
  "Spin-Based Devices for Future Microelectronics";
  Talk: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan; (invited) 04.05.2015 - 06.05.2015; in "Proceedings of The 4^th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4.
  
  
• [CP-71] Yu.Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, T. Grasser:
  "Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
  Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 6 doi:10.1109/IRPS.2015.7112834.
  
  
• [CP-70] B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean:
  "Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs";
  Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 19.04.2015 - 23.04.2015; in "Proceedings of the 2015 IEEE International Reliability Physics Symposium (IRPS)", (2015), 6 doi:10.1109/IRPS.2015.7112706.
  
  
• [CP-69] M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser:
  "Electromigration Modelling of Void Nucleation in Open Cu-TSVs";
  Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 19.04.2015 - 22.04.2015; in "Proceedings of the IEEE 16^th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), 5 doi:10.1109/EuroSimE.2015.7103100.
  
  
• [CP-68] V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
  "Silicon Spintronics";
  Talk: NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 13.04.2015 - 16.04.2015; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), 44 - 45.
  
  
• [CP-67] J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
  "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
  Talk: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 12.04.2015 - 15.04.2015; in "Proceedings of the 2015 Spring Simulation Multiconference (SpringSim´15)", (2015), 599 - 606.
  
  
• [CP-66] J. Weinbub, F. Dang, T. Gillberg, S. Selberherr:
  "Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method";
  Talk: High Performance Computing Symposium (HPC), Alexandria, VA, USA; 12.04.2015 - 15.04.2015; in "Program Book of the 2015 Spring Simulation Multiconference (SpringSim´15)", (2015), 74.
  
  
• [CP-65] V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
  "Silicon and CMOS-Compatible Spintronics";
  Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 15.03.2015 - 17.03.2015; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), 17 - 20.
  
  
• [CP-64] M. Knepley, K. Rupp, A. Terrel:
  "FEM Integration with Quadrature on the GPU";
  Talk: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015; (2015).
  
  
• [CP-63] K. Rupp, Ph. Tillet, T. St Clere Smithe, N. Karovic, J. Weinbub, F. Rudolf:
  "ViennaCL - Fast Linear Algebra for Multi and Many-Core Architectures";
  Poster: SIAM Conference on Computational Science and Engineering, Salt Lake City, Utah, USA; 14.03.2015 - 18.03.2015; (2015).
  
  
• [CP-62] K. Rupp, M. Bina, A. Morhammer, T. Grasser, A. Jüngel:
  "ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method";
  Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 11.03.2015 - 13.03.2015; (2015).
  
  
• [CP-61] Yu.Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
  "Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
  Talk: Graphene 2015, Bilbao, Spain; 10.03.2015 - 13.03.2015; in "Abstracts Graphene 2015", (2015), 1.
  
  
• [CP-60] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films";
  Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015).
  
  
• [CP-59] N. Neophytou, M. Thesberg, M. Pourfath, H. Kosina:
  "Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations";
  Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015).
  
  
• [CP-58] M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
  "Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study";
  Talk: APS March Meeting, San Antonio, USA; 02.03.2015 - 06.03.2015; in "Bulletin of the American Physical Society (APS March Meeting)", (2015).
  
  
• [CP-57] A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer";
  Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 24.02.2015 - 27.02.2015; in "Proceedings of 21^st Iberchip Worshop", (2015).
  
  
• [CP-56] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films";
  Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), 285 - 288 doi:10.1109/ULIS.2015.7063829.
  
  
• [CP-55] Yu.Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
  "Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), 81 - 84.
  
  
• [CP-54] P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
  "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 26.01.2015 - 28.01.2015; in "Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763.
  
  
• [CP-53] J. Franco, B. Kaczer, N. Waldron, Ph. J. Roussel, A. Alian, M. Pourghaderi, Z. Ji, T. Grasser, T. Kauerauf, S. Sioncke, N. Collaert, A. Thean, G. Groeseneken:
  "RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs";
  Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), 506 - 509 doi:10.1109/IEDM.2014.7047087.
  
  
• [CP-52] T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
  "On the Microscopic Structure of Hole Traps in pMOSFETs";
  Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 15.12.2014 - 17.12.2014; in "2014 International Electron Devices Meeting (IEDM) Technical Digest", (2014), 530 - 533 doi:10.1109/IEDM.2014.7047093.
  
  
• [CP-51] A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
  "New Design of Spin-Torque Nano-Oscillators";
  Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 30.11.2014 - 05.12.2014; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), 63.
  
  
• [CP-50] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement";
  Talk: Workshop on Innovative Devices and Systems (WINDS), Kona; (invited) 30.11.2014 - 05.12.2014; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2014), 62.
  
  
• [CP-49] L. Filipovic, S. Selberherr:
  "About Processes and Performance of Integrated Gas Sensor Components";
  Talk: Energy Materials Nanotechnology (EMN East Meeting), Orlando, USA; (invited) 22.11.2014 - 25.11.2014; in "Abstracts Intl.Conf.on Energy - Materials - Nanotechnology (EMN)", (2014), 96 - 97.
  
  
• [CP-48] L. Filipovic, S. Selberherr:
  "Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes";
  Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Guilin, China; (invited) 28.10.2014 - 31.10.2014; in "Proc.Intl.Conf.on Solid-State and Integrated Circuit Technology (ICSICT)", (2014), 1692 - 1695.
  
  
• [CP-47] A. Harrer, P. Reininger, B. Schwarz, R. Gansch, S. Kalchmair, H. Detz, T. Zederbauer, D. MacFarland, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
  "Advances in Quantum Cascade Detector Design";
  Talk: 4^th International Nanophotonics Meeting 2014, Igls; 23.10.2014 - 25.10.2014; (2014).
  
  
• [CP-46] H. Ceric, W. H. Zisser, S. Selberherr:
  "Quantum Mechanical Calculations of Electromigration Characteristics";
  Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13^th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 16.
  
  
• [CP-45] L. Filipovic, S. Selberherr:
  "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
  Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13^th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 41.
  
  
• [CP-44] S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
  "Stress Evolution During the Nanoindentation in Open TSVs";
  Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13^th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 44.
  
  
• [CP-43] W. H. Zisser, H. Ceric, S. Selberherr:
  "Void Evolution in Open TSVs";
  Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 15.10.2014 - 17.10.2014; in "Abstracts of 13^th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 58.
  
  
• [CP-42] R. Lacerda de Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet:
  "On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure";
  Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 12.10.2014 - 16.10.2014; in "Final Report International Integrated Reliability Workshop (IIRW)", (2014), 111 - 114 doi:10.1109/IIRW.2014.7049523.
  
  
• [CP-41] S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
  "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), 63 - 68 doi:10.1109/IIRW.2014.7049512.
  
  
• [CP-40] Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
  "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 12.10.2014 - 16.10.2014; in "2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2014), 58 - 62 doi:10.1109/IIRW.2014.7049511.
  
  
• [CP-39] L. Filipovic, S. Selberherr:
  "The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias";
  Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in "Abstracts 25^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 36.
  
  
• [CP-38] W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
  "Electromigration Reliability of Open TSV Structures";
  Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 29.09.2014 - 02.10.2014; in "Abstracts 25^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48.
  
  
• [CP-37] V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr:
  "Modeling Silicon Spintronics";
  Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 23.09.2014 - 25.09.2014; in "Abstracts 2014", (2014), 78.
  
  
• [CP-36] M. Schrems, J. Siegert, P. Dorfi, J. Kraft, E. Stueckler, F. Schrank, S. Selberherr:
  "Manufacturing of 3D Integrated Sensors and Circuits";
  Talk: European Solid-State Device Research Conference (ESSDERC), Venice, Italy; (invited) 22.09.2014 - 26.09.2014; in "Proceedings of the 44^th European Solid-State Device Research Conference", (2014), 162 - 165 doi:10.1109/ESSDERC.2014.6948785.
  
  
• [CP-35] V. Sverdlov, D. Osintsev, S. Selberherr:
  "Spin Behaviour in Strained Silicon Films";
  Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 15.09.2014 - 18.09.2014; in "Abstracts of E-MRS Fall Meeting", (2014), 1.
  
  
• [CP-34] O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner:
  "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 117 - 120 doi:10.1109/SISPAD.2014.6931577.
  
  
• [CP-33] H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr:
  "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 221 - 224 doi:10.1109/SISPAD.2014.6931603.
  
  
• [CP-32] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 113 - 116 doi:10.1109/SISPAD.2014.6931576.
  
  
• [CP-31] L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
  "BTB Tunneling in InAs/Si Heterojunctions";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 245 - 248 doi:10.1109/SISPAD.2014.6931609.
  
  
• [CP-30] L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. P. Singulani, R. Minixhofer, S. Selberherr:
  "Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 341 - 344 doi:10.1109/SISPAD.2014.6931633.
  
  
• [CP-29] W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
  "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 77 - 80 doi:10.1109/SISPAD.2014.6931567.
  
  
• [CP-28] D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
  "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 193 - 196 doi:10.1109/SISPAD.2014.6931596.
  
  
• [CP-27] F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
  "Template-Based Mesh Generation for Semiconductor Devices";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 217 - 220 doi:10.1109/SISPAD.2014.6931602.
  
  
• [CP-26] K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser:
  "Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 365 - 368 doi:10.1109/SISPAD.2014.6931639.
  
  
• [CP-25] G. Rzepa, W. Gös, G. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser:
  "Physical Modeling of NBTI: From Individual Defects to Devices";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 81 - 84 doi:10.1109/SISPAD.2014.6931568.
  
  
• [CP-24] Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
  "On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 181 - 184 doi:10.1109/SISPAD.2014.6931593.
  
  
• [CP-23] S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
  "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 89 - 92 doi:10.1109/SISPAD.2014.6931570.
  
  
• [CP-22] L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
  "3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 269 - 272 doi:10.1109/SISPAD.2014.6931615.
  
  
• [CP-21] T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 297 - 300 doi:10.1109/SISPAD.2014.6931622.
  
  
• [CP-20] W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
  "Electromigration Induced Resistance Increase in Open TSVs";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 09.09.2014 - 11.09.2014; in "Proceedings of the 19^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), 249 - 252 doi:10.1109/SISPAD.2014.6931610.
  
  
• [CP-19] S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser:
  "On the Importance of Electron-Electron Scattering for Hot-carrier Degradation";
  Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 08.09.2014 - 11.09.2014; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859.
  
  
• [CP-18] M. Moradinasab, M. Pourfath, H. Kosina:
  "Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers";
  Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 07.09.2014 - 12.09.2014; in "International Quantum Cascade Lasers School & Workshop 2014", (2014), 182 - 183.
  
  
• [CP-17] S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr:
  "Stress Analysis in Open TSVs after Nanoindentation";
  Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in "Abstracts", (2014), 39 - 40.
  
  
• [CP-16] W. H. Zisser, H. Ceric, S. Selberherr:
  "Stress Development and Void Evolution in Open TSVs";
  Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 04.09.2014 - 05.09.2014; in "Abstracts", (2014), 38 - 39.
  
  
• [CP-15] M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina:
  "A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors";
  Talk: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 01.09.2014 - 04.09.2014; in "Proceedings of the 14^th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), 1 - 2.
  
  
• [CP-14] J. Cervenka, P. Ellinghaus, M. Nedjalkov:
  "Deterministic Solution of the Discrete Wigner Equation";
  Talk: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in "Eighth International Conference on Numerical Methods and Applications", (2014), 36.
  
  
• [CP-13] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method";
  Talk: International Conference on Numerical Methods and Applications, Borovets, Bulgaria; 20.08.2014 - 24.08.2014; in "Eighth International Conference on Numerical Methods and Applications", (2014), 19.
  
  
• [CP-12] M. Moradinasab, M. Pourfath, H. Kosina:
  "An Instability Study in Terahertz Quantum Cascade Lasers";
  Talk: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 03.08.2014 - 08.08.2014; in "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), 10.
  
  
• [CP-11] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films";
  Poster: 8^th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 28.07.2014 - 31.07.2014; in "Book of Abstracts", (2014), 1.
  
  
• [CP-10] J. Ghosh, V. Sverdlov, S. Selberherr:
  "Spin Diffusion in Silicon from a Ferromagnetic Contact";
  Talk: 10^th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in "Book of Abstracts", (2014), 165.
  
  
• [CP-9] A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer";
  Talk: 10^th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 06.07.2014 - 09.07.2014; in "Book of Abstracts", (2014), 166.
  
  
• [CP-8] N. Neophytou, H. Kosina:
  "Field Effect Density Modulation in Nanowires for Large Thermoelectric Power Factors: A Self-Consistent Atomistic Simulation Approach";
  Talk: International Conference on Thermoelectrics, Nashville, USA; 06.07.2014 - 10.07.2014; in "Book of Abstracts", (2014), 1.
  
  
• [CP-7] V. Sverdlov, A. Makarov, S. Selberherr:
  "Structural Optimization of MTJs for STT-MRAM and Oscillator Applications";
  Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 06.07.2014 - 08.07.2014; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), 19.
  
  
• [CP-6] J. Weinbub, K. Rupp, F. Rudolf:
  "A Flexible Material Database for Computational Science and Engineering";
  Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4^th European Seminar on Computing", (2014), 226.
  
  
• [CP-5] Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
  "Full-Band Modeling of Mobility in p-Type FinFETs";
  Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), 83 - 84.
  
  
• [CP-4] J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
  "The Multi-Dimensional Transient Challenge: The Wigner Particle Approach";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; (invited) 03.06.2014 - 06.06.2014; in "Book of Abstracts of the 17^th International Workshop on Computational Electronics (IWCE)", (2014), 119 - 120.
  
  
• [CP-3] K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, T. Grasser, A. Jüngel:
  "Performance Portability Study of Linear Algebra Kernels in OpenCL";
  Talk: International Workshop on OpenCL (IWOCL), Bristol, UK; 12.05.2014 - 13.05.2014; in "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), 11 doi:10.1145/2664666.2664674.
  
  
• [CP-2] Y. Wang, M. Baboulin, K. Rupp, O. Le Maitre:
  "Solving 3D Incompressible Navier-Stokes Equations on Hybrid CPU/GPU Systems";
  Talk: High Performance Computing Symposium (HPC), Tampa, Florida, USA; 13.04.2014 - 16.04.2014; in "HPC '14 Proceedings of the High Performance Computing Symposium", (2014), 1 - 8.
  
  
• [CP-1] K. Rupp, Ph. Tillet, A. Jungel, T. Grasser:
  "Achieving Portable High Performance for Iterative Solvers on Accelerators";
  Talk: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 10.03.2014 - 14.03.2014; in "Book of Abstracts", (2014), 815.
  
  

• [DT-2] Yu.Yu. Illarionov:
  "Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
  Reviewer: M. I. Vexler, A. Baraban, L. Goray; Ioffe Institute, 2015, oral examination: 22.01.2015.
  
  
• [DT-1] A. P. Singulani:
  "Advanced Methods for Mechanical Analysis and Simulation of Through Silicon Vias";
  Reviewer: S. Selberherr, O. Thomas; E360, 2014, oral examination: 07.07.2014.
  
  

• [MT-1] R. Sonderfeld:
  "Numerical Calculation of Semiconductor Band Structures";
  Supervisor: H. Kosina, Z. Stanojevic; E360, 2014, final examination: 28.11.2014.
  
  

• [BT-4] Andreas Selinger:
  "Eigenvalue Computations on GPUs";
  Supervisor: K. Rupp, E. Langer; Institut für Mikroelektronik, 2015.
  
  
• [BT-3] Marco Huymajer:
  "A File Conversion Tool for Migration of Measurement Data to a Common Framework";
  Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2015.
  
  
• [BT-2] Seda Fitoz:
  "Modeling of the Self-Neutralization Reaction (using Chemical Master Equations)";
  Supervisor: E. Langer, F. Schanovsky; Institut für Mikroelektronik, 2014.
  
  
• [BT-1] Benedikt Limbacher:
  "Trap Assisted Tunneling";
  Supervisor: T. Grasser, G. Rzepa; Institut für Mikroelektronik, 2014.