• [BK-6] V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr:
  "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS";
  Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-29-8, 150 page(s).
  
  
• [BK-5] D.K. Ferry, J. Weinbub:
  "Booklet of the 1^st International Wigner Workshop (IW2)";
  Institute for Microelectronics, TU Wien, (2015), , 16 page(s).
  
  
• [BK-4] Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen:
  "Advanced CMOS-Compatible Semiconductor Devices 17";
  The Electrochemical Society, (2015), ISBN: 978-1-62332-238-0, 365 page(s).
  
  
• [BK-3] L.T. Watson, J. Weinbub, M. Sosonkina, W.I. Thacker, K. Rupp:
  "High Performance Computing Symposium (HPC 2015)";
  The Society for Modeling and Simulation International, (2015), ISBN: 978-1-5108-0101-1, 242 page(s).
  
  
• [BK-2] R. Zemann, A. Grill, I. Hahn, H. Krebs, A. Mayr, P. Eder-Neuhauser, B. Ullmann:
  "Proceedings VSS 2015 - Vienna young Scientists Symposium";
  Book of Abstracts, Dipl.Ing. Heinz A. Krebs, (2015), ISBN: 978-3-9504017-07, 182 page(s).
  
  
• [BK-1] M. Nedjalkov, J. Weinbub, D.K. Ferry:
  "Introduction to the Special Issue on Wigner Functions";
  Journal of Computational Electronics, 14, (2015), 857 - 858 doi:10.1007/s10825-015-0745-6.
  
  

• [PJ-38] Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger:
  "Role of Hydrogen in Volatile Behaviour of Defects in SiO₂-Based Electronic Devices";
  Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472 (2016)(invited), 1 - 23 doi:10.1098/rspa.2016.0009.
  
  
• [PJ-37] L. Filipovic, S. Selberherr:
  "Stress in Three-Dimensionally Integrated Sensor Systems";
  Microelectronics Reliability, 61 (2016), 3 - 10 doi:10.1016/j.microrel.2015.09.013.
  
  
• [PJ-36] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress";
  Journal of Nano Research, 39 (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34.
  
  
• [PJ-35] M. Glaser, A. Kitzler, A. Johannes, S. Pruncal, H. Potts, S. Conesa-Boj, L. Filipovic, H. Kosina, W. Skorupa, E. Bertagnolli, C. Ronning, A. Fontcuberta i Morral, A. Lugstein:
  "Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures";
  Nano Letters, 16 (2016), 3507 - 3518 doi:10.1021/acs.nanolett.6b00315.
  
  
• [PJ-34] Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
  "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
  Japanese Journal of Applied Physics, 55 (2016), 04EP03 doi:10.7567/JJAP.55.04EP03.
  
  
• [PJ-33] M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
  "On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
  Japanese Journal of Applied Physics, 55 (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14.
  
  
• [PJ-32] S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
  "The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study";
  Journal of Applied Physics, 114 (2016), 144302-1 - 1444302-9 doi:10.1063/1.4945392.
  
  
• [PJ-31] N. Neophytou, M. Thesberg:
  "Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor";
  Journal of Computational Electronics, 15 (2016)(invited), 16 - 26 doi:10.1007/s10825-016-0792-7.
  
  
• [PJ-30] M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee:
  "Electronic Properties of Dislocations";
  Solid State Phenomena, 242 (2016), 141 - 146 doi:10.4028/www.scientific.net/SSP.242.141.
  
  
• [PJ-29] G. Rescher, G. Pobegen, T. Grasser:
  "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
  Materials Science Forum, 858 (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481.
  
  
• [PJ-28] P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
  "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
  Solid-State Electronics, 115 (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014.
  
  
• [PJ-27] M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
  "The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach";
  Journal of Electronic Materials, 45 (2016), 1584 - 1588 doi:10.1007/s11664-015-4124-7.
  
  
• [PJ-26] S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
  "Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs";
  IEEE Electron Device Letters, 37 (2016), 84 - 87 doi:10.1109/LED.2015.2503920.
  
  
• [PJ-25] J. Weinbub, A. Hössinger:
  "Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method";
  Procedia Computer Science, 80 (2016), 2271 - 2275 doi:10.1016/j.procs.2016.05.408.
  
  
• [PJ-24] M. Zeraati, S.M.V. Allaei, I.A. Sarsari, M. Pourfath, D. Donadio:
  "Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study";
  Physical Review B, 93 (2016), 085424-1 - 085424-6 doi:10.1103/PhysRevB.93.085424.
  
  
• [PJ-23] M. Asad, S. Salimian, M. Sheikhi, M. Pourfath:
  "Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS₂ Nanoparticles";
  Sensors and Actuators A: Physical, 232 (2015), 285 - 291 doi:10.1016/j.sna.2015.06.018.
  
  
• [PJ-22] A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
  "Investigation of Novel Silicon PV Cells of a Lateral Type";
  Silicon, 7 (2015), 283 - 291 doi:10.1007/s12633-014-9227-x.
  
  
• [PJ-21] I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
  "Boundary Conditions and the Wigner Equation Solution";
  Journal of Computational Electronics, 14 (2015), 859 - 863 doi:10.1007/s10825-015-0720-2.
  
  
• [PJ-20] A. El-Sayed, M. Watkins, T. Grasser, V. Afanas'Ev, A. Shluger:
  "Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
  Physical Review Letters, 114 (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503.
  
  
• [PJ-19] A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas'Ev, A. Shluger:
  "Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
  Physical Review B, 92 (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107.
  
  
• [PJ-18] L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
  "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
  Microelectronics Reliability, 55 (2015), 1843 - 1848 doi:10.1016/j.microrel.2015.06.014.
  
  
• [PJ-17] M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
  "Strain Induced Mobility Modulation in Single-Layer MoS₂";
  Journal of Physics D: Applied Physics, 48 (2015), 375104-1 - 375104-11 doi:10.1088/0022-3727/48/37/375104.
  
  
• [PJ-16] M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
  "Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S, Se)";
  IEEE Transactions on Electron Devices, 62 (2015), 3192 - 3198 doi:10.1109/TED.2015.2461617.
  
  
• [PJ-15] M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
  "Very Large Strain Gauges Based on Single Layer MoSe₂ and WSe₂ for Sensing Applications";
  Applied Physics Letters, 107 (2015), 253503-1 - 253503-4 doi:10.1063/1.4937438.
  
  
• [PJ-14] Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
  "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
  IEEE Transactions on Electron Devices, 62 (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433.
  
  
• [PJ-13] Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
  "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
  IEEE Transactions on Electron Devices, 62 (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704.
  
  
• [PJ-12] B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser:
  "Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs";
  IEEE Electron Device Letters, 36 (2015), 300 - 302 doi:10.1109/LED.2015.2404293.
  
  
• [PJ-11] S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina:
  "On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals";
  Journal of Applied Physics, 118 (2015), 205303-1 - 205303--6 doi:10.1063/1.4936310.
  
  
• [PJ-10] M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
  "The Wigner Equation in the Presence of Electromagnetic Potentials";
  Journal of Computational Electronics, 14 (2015), 888 - 893 doi:10.1007/s10825-015-0732-y.
  
  
• [PJ-9] N. Neophytou, H. Karamitaheri, H. Kosina:
  "Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study";
  Journal of Electronic Materials, 44 (2015), 1599 - 1605 doi:10.1007/s11664-014-3488-4.
  
  
• [PJ-8] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films";
  Solid-State Electronics, 112 (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007.
  
  
• [PJ-7] V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin:
  "Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs";
  Applied Physics Letters, 106 (2015), 183505-1 - 183505-5 doi:10.1063/1.4921006.
  
  
• [PJ-6] F. Rudolf, K. Rupp, J. Weinbub, A. Morhammer, S. Selberherr:
  "Transformation Invariant Local Element Size Specification";
  Applied Mathematics and Computation, 267 (2015), 195 - 206 doi:10.1016/j.amc.2015.04.027.
  
  
• [PJ-5] P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
  "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
  Microelectronics Reliability, 55 (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021.
  
  
• [PJ-4] M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
  "The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices";
  Journal of Applied Physics, 118 (2015), 224301-1 - 224301-6 doi:10.1063/1.4936839.
  
  
• [PJ-3] L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
  "Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs";
  IEEE Transactions on Electron Devices, 62 (2015), 2106­ - 2112 doi:10.1109/TED.2015.2436351.
  
  
• [PJ-2] J. Weinbub, P. Ellinghaus, M. Nedjalkov:
  "Domain Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method";
  Journal of Computational Electronics, 14 (2015), 922 - 929 doi:10.1007/s10825-015-0730-0.
  
  
• [PJ-1] J. Weinbub, M. Wastl, K. Rupp, F. Rudolf, S. Selberherr:
  "ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering";
  Applied Mathematics and Computation, 267 (2015), 282 - 293 doi:10.1016/j.amc.2015.03.094.
  
  

• [BC-11] V. Sverdlov, D. Osintsev, S. Selberherr:
  "Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation";
  in: "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed); De Gruyter, 2016, ISBN: 978-1-5015-1050-2, 29 - 48 doi:10.1515/9781501501531.
  
  
• [BC-10] P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
  "Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes";
  in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, , 120 - 123 doi:10.1109/ULIS.2016.7440067.
  
  
• [BC-9] V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
  "Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations";
  in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, , 226 - 229 doi:10.1109/ULIS.2016.7440094.
  
  
• [BC-8] J. Weinbub, P. Ellinghaus, S. Selberherr:
  "Parallelization of the Two-Dimensional Wigner Monte Carlo Method";
  in: "Lecture Notes in Computer Science", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 309 - 316 doi:10.1007/978-3-319-26520-9_34.
  
  
• [BC-7] J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr:
  "Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach";
  in: "Lecture Notes in Computer Science", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 285 - 292 doi:10.1007/978-3-319-26520-9_31.
  
  
• [BC-6] M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
  "A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering";
  in: "Lecture Notes in Computer Science", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 301 - 308 doi:10.1007/978-3-319-26520-9_33.
  
  
• [BC-5] V. Sverdlov, S. Selberherr:
  "Spin-Based CMOS-Compatible Devices";
  in: "Lecture Notes in Computer Science", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 42 - 49 doi:10.1007/978-3-319-26520-9_4.
  
  
• [BC-4] F. Rudolf, J. Weinbub, K. Rupp, P. Resutik, A. Morhammer, S. Selberherr:
  "Free Open Source Mesh Healing for TCAD Device Simulations";
  in: "Lecture Notes in Computer Science", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 293 - 300 doi:10.1007/978-3-319-26520-9_32.
  
  
• [BC-3] J. Cervenka, P. Ellinghaus, M. Nedjalkov, E. Langer:
  "Optimization of the Deterministic Solution of the Discrete Wigner Equation";
  in: "Lecture Notes in Computer Science", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 269 - 276 doi:10.1007/978-3-319-26520-9_29.
  
  
• [BC-2] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "The Influence of Electrostatic Lenses on Wave Packet Dynamics";
  in: "Lecture Notes in Computer Science", I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2015, ISBN: 978-3-319-26519-3, 277 - 284 doi:10.1007/978-3-319-26520-9_30.
  
  
• [BC-1] B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
  "Recent Trends in Bias Temperature Instability";
  in: "Circuit Design for Reliability", R. Reis, Y. Cao, G. Wirth (ed); Springer New York, 2015, ISBN: 978-1-4614-4077-2, 5 - 19 doi:10.1007/978-1-4614-4078-9_2.
  
  

• [CP-83] G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser:
  "Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs";
  Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 14.06.2016 - 16.06.2016; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), 208 - 209.
  
  
• [CP-82] Yu. Illarionov, M. Waltl, J. Kim, T. Akinwande:
  "Temperature-dependent Hysteresis in Black Phosphorus FETs";
  Poster: Graphene Week, Warsaw, Poland; 13.06.2016 - 17.06.2016; (2016).
  
  
• [CP-81] L. Filipovic, S. Selberherr:
  "Effects of the Deposition Process Variation on the Performance of Open TSVs";
  Poster: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), 2188 - 2195 doi:10.1109/ECTC.2016.177.
  
  
• [CP-80] S. Papaleo, M. Rovitto, H. Ceric:
  "Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall";
  Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), 1617 - 1622 doi:10.1109/ECTC.2016.19.
  
  
• [CP-79] M. Rovitto, H. Ceric:
  "Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias";
  Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 31.05.2016 - 03.06.2016; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), 550 - 556 doi:10.1109/ECTC.2016.49.
  
  
• [CP-78] H. Ceric, R. Lacerda de Orio, M. Rovitto:
  "TCAD Approach for the Assessment of Interconnect Reliability";
  Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany; (invited) 30.05.2016 - 01.06.2016; in "Abstracts of 14^th International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP", (2016), T21.
  
  
• [CP-77] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Novel Magnetic Devices for Memory and Non-Volatile Computing Applications";
  Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 25.05.2016 - 27.05.2016; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14.
  
  
• [CP-76] L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
  "Impact of Across-Wafer Variation on the Electrical Performance of TSVs";
  Talk: International Interconnect Technology Conference (IITC), San Jose, CA, USA; 23.05.2016 - 26.05.2016; in "Proceedings of IEEE International Interconnect Technology Conference (IITC)", (2016), 130 - 132.
  
  
• [CP-75] K. Giering, G. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke:
  "Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model";
  Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 4C-4-1 - 4C-4-6.
  
  
• [CP-74] T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
  "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
  Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8.
  
  
• [CP-73] Yu. Illarionov, M. Waltl, M. M. Furchi, T. Mueller, T. Grasser:
  "Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of the 2016 IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6.
  
  
• [CP-72] S. Papaleo, H. Ceric:
  "A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects";
  Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 17.04.2016 - 21.04.2016; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), PA-2-1 - PA-2-4.
  
  
• [CP-71] M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser:
  "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs";
  Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 17.04.2016 - 21.04.2016; in "Proceedings of IRPS 2016", (2016), XT-02-1 - XT-02-6.
  
  
• [CP-70] M. Nedjalkov, J. Weinbub, S. Selberherr:
  "The Description of Carrier Transport for Quantum Systems";
  Talk: Energy Materials Nanotechnology Meeting on Quantum, Phuket, Thailand; (invited) 08.04.2016 - 11.04.2016; in "Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum", (2016), 41 - 42.
  
  
• [CP-69] V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
  "Nanoelectronics with Spin";
  Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 04.04.2016 - 06.04.2016; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20.
  
  
• [CP-68] V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr:
  "Silicon Spintronics";
  Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 21.03.2016 - 24.03.2016; in "Book of Abstracts of the 2016 EMN Meeting on Magnetic Materials", (2016), 37 - 38.
  
  
• [CP-67] V. Sverdlov, S. Selberherr:
  "Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures";
  Talk: APS March Meeting, Baltimore, USA; 14.03.2016 - 18.03.2016; in "Bulletin of the American Physical Society (APS March Meeting)", (2016), 1.
  
  
• [CP-66] L. Filipovic, S. Selberherr:
  "Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors";
  Talk: World Congress of Smart Materials (WCSM), Singapore; (invited) 04.03.2016 - 06.03.2016; in "Proceedings of the BIT's 2^nd Annual World Congress of Smart Materials 201", (2016), 517.
  
  
• [CP-65] A. Morhammer, K. Rupp, F. Rudolf, J. Weinbub:
  "Optimized Sparse Matrix-Matrix Multilication for Multi-Core CPUs, GPUs and MICs";
  Talk: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), 23.
  
  
• [CP-64] K. Rupp, J. Weinbub:
  "A Computational Scientist's Perspective on Current and Future Hardware Architectures";
  Talk: Austrian HPC Meeting (AHPC), Grundlsee, Austria; 22.02.2016 - 24.02.2016; in "Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC)", (2016), 24.
  
  
• [CP-63] M. Thesberg, N. Neophytou, M. Pourfath, H. Kosina:
  "Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials";
  Talk: Energy Materials Nanotechnology (EMN) - Thermoelectric Materials, Orlando, USA; (invited) 22.02.2016 - 25.02.2016; (2016).
  
  
• [CP-62] P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
  "Modeling Neutral Particle Flux in High Aspect Ratio Holes using a One-Dimensional Radiosity Approach";
  Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), 68 - 69.
  
  
• [CP-61] V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
  "Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling";
  Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Wien; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), 128 - 129.
  
  
• [CP-60] V. Sverdlov, S. Selberherr:
  "Spin-dependent Resonant Tunneling";
  Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 25.01.2016 - 27.01.2016; in "Book of Abstracts of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2016), 116 - 117.
  
  
• [CP-59] T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
  "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
  Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 07.12.2015 - 09.12.2015; in "Proceedings of the International Electron Devices Meeting (IEDM)", (2015), 535 - 538.
  
  
• [CP-58] C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
  "The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures";
  Talk: Semiconductor Interface Specialists Conference, Arlington, VA, USA; 02.12.2015 - 05.12.2015; (2015).
  
  
• [CP-57] P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
  "ViennaWD - Applications";
  Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015 - ; in "Booklet of the 1^st International Wigner Workshop (IW2", ( ), 9.
  
  
• [CP-56] A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
  "A Novel Method of SOT-MRAM Switching";
  Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015).
  
  
• [CP-55] V. Sverdlov, S. Selberherr:
  "Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
  Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015).
  
  
• [CP-54] J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method";
  Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 29.11.2015 - 04.12.2015; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2015)", (2015).
  
  
• [CP-53] J. Weinbub, P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "ViennaWD - Status and Outlook";
  Talk: International Wigner Workshop (IW2), Waikoloa, Hawaii, USA; 29.11.2015 - ; in "Booklet of the 1^st International Wigner Workshop (IW2)", ( ), 8.
  
  
• [CP-52] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing";
  Talk: Energy Materials Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 16.11.2015 - 19.11.2015; in "Book of Abstract of the Energy Materials Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16.
  
  
• [CP-51] L. Filipovic, S. Selberherr:
  "Processing of Integrated Gas Sensor Devices";
  Talk: IEEE International Conference on Electrical and Electronic Technology TENCON, Macau, China; (invited) 01.11.2015 - 04.11.2015; in "Proceedings of the IEEE Region 10 Annual Conference (TENCON)", (2015), 6 doi:10.1109/TENCON.2015.7372781.
  
  
• [CP-50] A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
  "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
  Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 12.10.2015 - 14.10.2015; in "Technical Digest of the 15^th Non-Volatile Memory Technology Symposium (NVMTS 2015)", (2015), 105 - 106.
  
  
• [CP-49] A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser:
  "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in "Proceedings of the 2015 IEEE International Integrated Reliability Workshop (IIRW)", (2015), 41 - 45 doi:10.1109/IIRW.2015.7437064.
  
  
• [CP-48] F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
  "Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality";
  Talk: International Meshing Roundtable (IMR), Austin, Texas, USA; 11.10.2015 - 14.10.2015; in "Proceedings of the 24^th International Meshing Roundtable (IMR24)", (2015), 5.
  
  
• [CP-47] S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser:
  "On the Temperature Behavior of Hot-Carrier Degradation";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 11.10.2015 - 15.10.2015; in "2015 IEEE International Integrated Reliability Workshop Final Report (IIRW)", (2015), 143 - 146 doi:10.1109/IIRW.2015.7437088.
  
  
• [CP-46] L. Filipovic, A. P. Singulani, F. Roger, S. Carniello, S. Selberherr:
  "Intrinsic Stress Analysis of Tungsten-Lined Open TSVs";
  Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in "Abstracts of the 26^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 71.
  
  
• [CP-45] P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
  "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
  Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 05.10.2015 - 09.10.2015; in "Abstracts of the 26^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60.
  
  
• [CP-44] Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser:
  "Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics";
  Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), 330 - 331.
  
  
• [CP-43] Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
  "Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
  Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), 650 - 651.
  
  
• [CP-42] A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
  Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 27.09.2015 - 30.09.2015; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), 140 - 141.
  
  
• [CP-41] V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
  "Spin-Driven Applications of Silicon and CMOS-Compatible Devices";
  Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Xi'an, China; (invited) 24.09.2015 - 26.09.2015; in "Proceedings of the BIT's 5^tht Annual Congress of Nano Science and Technology-201", (2015), 175.
  
  
• [CP-40] H. Kosina:
  "Blessing or curse: Dissipative quantum transport in nano-scale devices";
  Talk: Workshop "From Atom to Transistor" at the 45^th European Solid-State Device Research Conference (ESSDERC, Graz; (invited) 18.09.2015 - ; ( ).
  
  
• [CP-39] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film";
  Talk: European Materials Research Society (EMRS), Warsaw, Poland; 15.09.2015 - 18.09.2015; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1.
  
  
• [CP-38] L. Gerrer, R. Hussin, S. Amoroso, J. Franco, P. Weckx, N. Simicic, N. Horiguchi, B. Kaczer, T. Grasser, A. Asenov:
  "Experimental Evidences and Simulations of Trap Generation along a Percolation Path";
  Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45^th European Solid State Device Research Conferenc", (2015), 226 - 229 doi:10.1109/ESSDERC.2015.7324755.
  
  
• [CP-37] M. Hosseini, M. Elahi, M. Pourfath, D. Esseni:
  "Strain Engineering of Single-Layer MoS2";
  Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45^th European Solid State Device Research Conference", (2015), 314 - 317 doi:10.1109/ESSDERC.2015.7324777.
  
  
• [CP-36] Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
  "Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
  Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45^th European Solid State Device Research Conference", (2015), 172 - 175 doi:10.1109/ESSDERC.2015.7324741.
  
  
• [CP-35] B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser:
  "The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits";
  Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; (invited) 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45^th European Solid State Device Research Conference", (2015), 218 - 225 doi:10.1109/ESSDERC.2015.7324754.
  
  
• [CP-34] R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
  "On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements";
  Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 14.09.2015 - 18.09.2015; in "Proceedings of the 2015 45^th European Solid State Device Research Conferenc", (2015), 218 - 225 doi:10.1109/ESSDERC.2015.7324754.
  
  
• [CP-33] O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, Z. Stanojevic, H. W. Cheng-Karner:
  "Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 202 - 205.
  
  
• [CP-32] H. Ceric, M. Rovitto:
  "Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 194 - 197 doi:10.1109/SISPAD.2015.7292292.
  
  
• [CP-31] H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser:
  "Expanding TCAD Simulations from Grid to Cloud";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 186 - 189 doi:10.1109/SISPAD.2015.7292290.
  
  
• [CP-30] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 24 - 27 doi:10.1109/SISPAD.2015.7292249.
  
  
• [CP-29] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 277 - 280 doi:10.1109/SISPAD.2015.7292313.
  
  
• [CP-28] M. Karner, Z. Stanojevic, Ch. Kernstock, O. Baumgartner, H. W. Cheng-Karner:
  "Hierarchical TCAD Device Simulation of FinFETs";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 258 - 261.
  
  
• [CP-27] Ch. Kernstock, Z. Stanojevic, O. Baumgartner, M. Karner:
  "Layout-Based TCAD Device Model Generation";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 198 - 201.
  
  
• [CP-26] S. Nazemi, E. Soleimani, M. Pourfath, H. Kosina:
  "The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 333 - 336.
  
  
• [CP-25] S. Papaleo, W. H. Zisser, H. Ceric:
  "Factors that Influence Delamination at the Bottom of Open TSVs";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 421 - 424 doi:10.1109/SISPAD.2015.7292350.
  
  
• [CP-24] G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
  "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 144 - 147 doi:10.1109/SISPAD.2015.7292279.
  
  
• [CP-23] P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser:
  "Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 60 - 63 doi:10.1109/SISPAD.2015.7292258.
  
  
• [CP-22] L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
  "3D Electro-Thermal Simulations of Bulk FinFETs with Statistical Variations";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 112 - 115 doi:10.1109/SISPAD.2015.7292271.
  
  
• [CP-21] Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
  "A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 44 - 47 doi:10.1109/SISPAD.2015.7292254.
  
  
• [CP-20] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 09.09.2015 - 11.09.2015; in "Proceedings of the 20^th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), 446 - 449 doi:10.1109/SISPAD.2015.7292357.
  
  
• [CP-19] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh";
  Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18^th International Workshop on Computational Electronics (IWCE)", (2015), 93 - 94.
  
  
• [CP-18] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Memory-efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations";
  Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), 4 doi:10.1109/IWCE.2015.7301955.
  
  
• [CP-17] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films";
  Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18^th International Workshop on Computational Electronics (IWCE)", (2015), 35 - 36.
  
  
• [CP-16] J. Ghosh, V. Sverdlov, S. Selberherr:
  "Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film";
  Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), 4 doi:10.1109/IWCE.2015.7301961.
  
  
• [CP-15] A. Kefayati, M. Pourfath, H. Kosina:
  "A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS₂";
  Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18^th International Workshop on Computational Electronics (IWCE)", (2015), 7 - 8.
  
  
• [CP-14] M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina:
  "Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF";
  Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Proceedings of the 2015 International Workshop on Computational Electronics (IWCE)", (2015), 4.
  
  
• [CP-13] L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov:
  "An Advanced Electro-Thermal Simulation Methodology For Nanoscale Device";
  Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18^th International Workshop on Computational Electronics (IWCE)", (2015), 155 - 156.
  
  
• [CP-12] Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
  "On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects";
  Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 02.09.2015 - 04.09.2015; in "Book of Abstracts 18^th International Workshop on Computational Electronics (IWCE)", (2015), 97 - 98.
  
  
• [CP-11] F. Roger, A. P. Singulani, S. Carniello, L. Filipovic, S. Selberherr:
  "Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation";
  Talk: International Workshop on CMOS Variability (VARI), Salvador, Brazil; 01.09.2015 - 04.09.2015; in "Proceedings of the 6^th International Workshop on CMOS Variability (VARI)", (2015), 39 - 44 doi:10.1109/VARI.2015.7456561.
  
  
• [CP-10] V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr:
  "CMOS-Compatible Spintronic Devices";
  Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 01.09.2015 - 04.09.2015; in "Proceedings of the 30^th Symposium on Microelectronics Technology and Devices (SBMicro", (2015), 4 doi:10.1109/SBMicro.2015.7298103.
  
  
• [CP-9] S. Selberherr:
  "CMOS-Compatible Spintronic Devices";
  Talk: IEEE EDS Mini-Colloquium Distinguished Lecture, Universidade Salvador, Salvador, Brasil; (invited) 01.09.2015 - ; ( ).
  
  
• [CP-8] J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization";
  Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 31.08.2015 - 01.09.2015; (2015).
  
  
• [CP-7] S. Selberherr:
  "The Evolution and Potential Future of Microelectronics";
  Talk: IEEE EDS Distinguished Lecture, University of Campinas, Campinas, Brasil; (invited) 28.08.2015 - ; ( ).
  
  
• [CP-6] T. Grasser:
  "Recent Progress in Understanding the Bias Temperature Instability: from Single Traps to Distributions";
  Talk: IEEE EDS Distinguished Lecture, Hiroshima, Japan; (invited) 26.08.2015 - ; ( ).
  
  
• [CP-5] T. Grasser:
  "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
  Talk: Kyoto Institute of Technology, Kyoto, Japan; (invited) 24.08.2015 - ; ( ).
  
  
• [CP-4] T. Grasser:
  "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
  Talk: D2T Symposium, Tokyo, Japan; (invited) 21.08.2015 - ; ( ).
  
  
• [CP-3] J. Ghosh, V. Sverdlov, S. Selberherr:
  "Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films";
  Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in "Program and Abstract Book of the 8^th International School & Conference on Spintronics and Quantum Information Technolog", (2015), 130.
  
  
• [CP-2] V. Sverdlov, S. Selberherr:
  "Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature";
  Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 10.08.2015 - 13.08.2015; in "Program and Abstract Book of the 8^th International School & Conference on Spintronics and Quantum Information Technolog", (2015), 114.
  
  
• [CP-1] A. Harrer, P. Reininger, R. Gansch, B. Schwarz, D. MacFarland, T. Zederbauer, H. Detz, A. M. Andrews, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser:
  "Quantum Cascade Detectors for Sensing Applications";
  Talk: ICAVS8, Wien; 12.07.2015 - 17.07.2015; (2015).
  
  

• [DT-5] W. Zisser:
  "Electromigration in Interconnect Structures ";
  Reviewer: S. Selberherr, M. Kaltenbacher; E360, 2016, oral examination: 21.06.2016.
  
  
• [DT-4] J. Ghosh:
  "Modeling Spin-Dependent Transport in Silicon";
  Reviewer: V. Sverdlov, M. Bescond; E360, 2016, oral examination: 03.03.2016.
  
  
• [DT-3] P. Ellinghaus:
  "Two-Dimensional Wigner Monte Carlo Simulation for Time-Resolved Quantum Transport with Scattering";
  Reviewer: S. Selberherr, I. Dimov; E360, 2016, oral examination: 25.02.2016.
  
  
• [DT-2] Yu. Illarionov:
  "Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors";
  Reviewer: T. Grasser, L. Larcher; E360, 2015, oral examination: 18.12.2015.
  
  
• [DT-1] R. Coppeta:
  "Dislocation Modeling in III-Nitrides";
  Reviewer: T. Grasser, A. Köck; E360, 2015, oral examination: 15.06.2015.
  
  

• [MT-3] M. Huymajer:
  "Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS";
  Supervisor: T. Grasser, M. Waltl; E360, 2016, final examination: 16.06.2016.
  
  
• [MT-2] B. Stampfer:
  "Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model";
  Supervisor: T. Grasser, A. Grill; E360, 2016, final examination: 22.01.2016.
  
  
• [MT-1] M. Kampl:
  "Implementation of a backward Monte Carlo algorithm to investigate hot carriers in semiconductor devices";
  Supervisor: H. Kosina, Z. Stanojevic; E360, 2015, final examination: 20.11.2015.
  
  

• [BT-3] Alexander Toifl:
  " Interaction of Random Discrete Dopants with Oxide Traps";
  Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2016.
  
  
• [BT-2] Alexander Schwed:
  "Numerische Lösung der Poisson-Gleichung mit dem Mehrgitterverfahren";
  Supervisor: E. Langer, K. Rupp; Institut für Mikroelektronik, 2016.
  
  
• [BT-1] Michael Tschiedel:
  "Entwicklung einer kompakten Messeinheit zur Erweiterung des TDDS Messsystems";
  Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2015.