Biography

Wolfgang Gös was born in Vienna, Austria, in 1979. He studied technical physics at the Technische Universität Wien, where he received the degree of Diplomingenieur in 2005. In January 2006, he joined the Institute for Microelectronics and focussed on modeling of the bias temperature instability. In 2007, he was a visitor at the Vanderbilt University in Nashville, TN. In 2011, he received his doctoral degree and currently holds a post-doc position at the Institute for Microelectronics, where he continues his research activities in reliability issues of semiconductor devices. His current scientific interests include atomistic simulations, the chemical and physical processes involved in NBTI and HCI, and reliability issues in general.