• [BK-5] D.K. Ferry, S.M. Goodnick, W. Porod, D. Vasileska, J. Weinbub:
  "Book of Abstracts of the 20^th International Workshop on Computational Nanotechnology (IWCN)";
  Institute for Microelectronics, TU Wien, (2019), ISBN: 978-3-9504738-0-3, 162 page(s).
  
  
• [BK-4] D.K. Ferry, J. Weinbub, S.M. Goodnick:
  "Book of Abstracts of the 3^rd International Wigner Workshop (IW²)";
  Institute for Microelectronics, TU Wien, (2019), ISBN: 978-3-9504738-1-0, 56 page(s).
  
  
• [BK-3] J. Weinbub, B. Jonker, H. Riechert, T. Machida, S.M. Goodnick, S. Selberherr:
  "Innovative Nanoscale Devices and Systems";
  Society for Micro- and Nanoelectronics, (2018), ISBN: 978-3-901578-32-8, 167 page(s).
  
  
• [BK-2] D.K. Ferry, M. Nedjalkov:
  "The Wigner Function in Science and Technology";
  IoP Publishing, (2018), ISBN: 978-0-7503-1671-2, 300 page(s) doi:10.1088/978-0-7503-1671-2.
  
  
• [BK-1] L.T. Watson, M. Sosonkina, W.I. Thacker, J. Weinbub, K. Rupp:
  "High Performance Computing Symposium (HPC 2018)";
  The Society for Modeling and Simulation International, (2018), ISBN: 978-1-5108-6016-2, 154 page(s).
  
  

• [PJ-35] A. Makarov, B. Kaczer, Ph Roussel, A. Chasin, A. Grill, M Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
  "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs";
  IEEE Electron Device Letters, 40 (2019), 870 - 873 doi:10.1109/LED.2019.2913625.
  
  
• [PJ-34] A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub:
  "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics";
  IEEE Transactions on Electron Devices, 66 (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929.
  
  
• [PJ-33] A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser:
  "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs";
  Solid-State Electronics, 19 (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004.
  
  
• [PJ-32] B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser:
  "Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques";
  IEEE Transactions on Device and Materials Reliability, 19 (2019), 358 - 362 doi:10.1109/TDMR.2019.2909993.
  
  
• [PJ-31] V. Sverdlov, A. Makarov, S. Selberherr:
  "Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM";
  Solid-State Electronics, 155 (2019), 49 - 56 doi:10.1016/j.sse.2019.03.010.
  
  
• [PJ-30] J. Ghosh, D. Osintsev, V. Sverdlov:
  "Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm";
  Journal of Computational Electronics, 18 (2019), 28 - 36 doi:10.1007/s10825-018-1274-x.
  
  
• [PJ-29] L. Filipovic:
  "A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration";
  Microelectronics Reliability, 97 (2019), 38 - 52 doi:10.1016/j.microrel.2019.04.005.
  
  
• [PJ-28] M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub:
  "Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution";
  Applied Sciences, 9 (2019)(invited), 1344-1 - 1344-10 doi:10.3390/app9071344.
  
  
• [PJ-27] M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry:
  "Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform";
  Physical Review B, 99 (2019), 014423-1 - 014423-16 doi:10.1103/PhysRevB.99.014423.
  
  
• [PJ-26] A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic:
  "Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices";
  Sensors, 19 (2019) doi:10.3390/s19020374.
  
  
• [PJ-25] M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser:
  "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory";
  IEEE Transactions on Electron Devices, 66 (2019), 241 - 248 doi:10.1109/TED.2018.2873421.
  
  
• [PJ-24] B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser:
  "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental";
  IEEE Transactions on Electron Devices, 66 (2019), 232 - 240 doi:10.1109/TED.2018.2873419.
  
  
• [PJ-23] T. Sadi, C. Medina-Bailon, M. Nedjalkov, J. Lee, O. Badami, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
  "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors";
  Materials, 12 (2019) doi:10.3390/ma12010124.
  
  
• [PJ-22] F. Safari, M. Moradinasab, M. Fathipour, H. Kosina:
  "Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study";
  Applied Surface Science, 464 (2019), 153 - 161 doi:10.1016/j.apsusc.2018.09.048.
  
  
• [PJ-21] S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
  "Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs";
  Semiconductors (Physics of Semiconductor Devices), 52 (2018), 1738 - 1742 doi:10.1134/S1063782618130183.
  
  
• [PJ-20] W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser:
  "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence";
  Microelectronics Reliability, 87 (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021.
  
  
• [PJ-19] L. Filipovic, A. Lahlalia:
  "Review-System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology";
  Journal of the Electrochemical Society, 165 (2018), 862 - 879 doi:10.1149/2.0731816jes.
  
  
• [PJ-18] G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
  "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning";
  Materials Science Forum, 924 (2018), 671 - 675 doi:10.4028/www.scientific.net/MSF.924.671.
  
  
• [PJ-17] K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
  "Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation";
  IEEE Transactions on Device and Materials Reliability, 18 (2018), 144 - 153 doi:10.1109/TDMR.2018.2813063.
  
  
• [PJ-16] G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
  "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique";
  IEEE Transactions on Electron Devices, 25 (2018), 1419 - 1426 doi:10.1109/TED.2018.2803283.
  
  
• [PJ-15] K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser:
  "Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation";
  IEEE Transactions on Electron Devices, 65 (2018), 4764 - 4771 doi:10.1109/TED.2018.287017.
  
  
• [PJ-14] M. Ballicchia, J. Weinbub, M. Nedjalkov:
  "Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects";
  Nanoscale, 10 (2018), 23037 - 23049 doi:10.1039/C8NR06933F.
  
  
• [PJ-13] X. Klemenschits, S. Selberherr, L. Filipovic:
  "Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review";
  Micromachines, 9 (2018)(invited), 631 doi:10.3390/mi9120631.
  
  
• [PJ-12] J. Strand, K. Moloud, A.-M. El-Sayed, V. Afanas´Ev, A. Shluger:
  "Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges";
  Journal of Physics: Condensed Matter, 30 (2018), 233001 doi:10.1088/1361-648X/aac005.
  
  
• [PJ-11] A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger:
  "Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO";
  Physical Review B, 98 (2018), 064102 doi:10.1103/PhysRevB.98.064102.
  
  
• [PJ-10] V. Sverdlov, S. Selberherr:
  "Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing";
  Facta universitatis - series: Electronics and Energetics, 31 (2018)(invited), 529 - 545 doi:10.2298/FUEE1804529S.
  
  
• [PJ-9] T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
  "A Physical Model for the Hysteresis in MoS2 Transistors";
  IEEE Journal of the Electron Devices Society, 6 (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933.
  
  
• [PJ-8] L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "Accelerating Flux Calculations Using Sparse Sampling";
  Micromachines, 9 (2018)(invited), 1 - 17 doi:10.3390/mi9110550.
  
  
• [PJ-7] M. Kampl, H. Kosina:
  "The Backward Monte Carlo Method for Semiconductor Device Simulation";
  Journal of Computational Electronics, 17 (2018), 1492 - 1504 doi:10.1007/s10825-018-1225-6.
  
  
• [PJ-6] J. Weinbub, D.K. Ferry:
  "Recent Advances in Wigner Function Approaches";
  Applied Physics Reviews, 5 (2018)(invited), 041104-1 - 041104-24 doi:10.1063/1.5046663.
  
  
• [PJ-5] A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
  "Analysis of the Features of Hot-Carrier Degradation in FinFETs";
  Semiconductors (Physics of Semiconductor Devices), 52 (2018), 1177 - 1182 doi:10.1134/S1063782618100081.
  
  
• [PJ-4] G. Meller, S. Selberherr:
  "Simulation of Injection Currents into Disordered Molecular Conductors";
  Materials Today: Proceedings, 5 (2018), 17472 - 17477 doi:10.1016/j.matpr.2018.06.051.
  
  
• [PJ-3] B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
  "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors";
  ACS Nano, 12 (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268.
  
  
• [PJ-2] V. Sverdlov, A. Makarov, S. Selberherr:
  "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field";
  Journal on Systemics, Cybernetics and Informatics, 16 (2018)(invited), 55 - 59.
  
  
• [PJ-1] J. Weinbub, M. Ballicchia, M. Nedjalkov:
  "Electron Interference in a Double-Dopant Potential Structure";
  Physica Status Solidi - Rapid Research Letters, 12 (2018), 1800111-1 - 1800111-4 doi:10.1002/pssr.201800111.
  
  

• [BC-3] T. Windbacher, A. Makarov, S. Selberherr, H. Mahmoudi, B.G. Malm, M. Ekström, M. Östling:
  "The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing";
  in: "Energy Efficient Computing & Electronics: Devices to Systems; Devices, Circuits, and Systems Series", S.K. Kurinec, S. Walia (ed); CRC Press, 2019, ISBN: 978-1-138-71036-8, 93 - 156 doi:10.1201/9781315200705.
  
  
• [BC-2] M. Benam, M. Nedjalkov, S. Selberherr:
  "A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach";
  in: "Lecture Notes in Computer Science", Springer, 2019, ISBN: 978-3-030-10692-8, 263 - 272 doi:10.1007/978-3-030-10692-8_29.
  
  
• [BC-1] L. Gnam, S. Selberherr, J. Weinbub:
  "Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms";
  in: "Lecture Notes in Computer Science", Springer, 2019, ISBN: 978-3-030-10692-8, 106 - 114 doi:10.1007/978-3-030-10692-8_12.
  
  

• [CP-54] V. Sverdlov, S. Selberherr:
  "A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 96.
  
  
• [CP-53] J. Cervenka, J. Weinbub:
  "Superposed States and the Wigner Approach";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 50.
  
  
• [CP-52] R. Kosik, H. Kosina:
  "A Revised Wigner Function Approach for Stationary Quantum Transport";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 70 - 71.
  
  
• [CP-51] J. Weinbub, M. Ballicchia, M. Nedjalkov:
  "Electron Interference in Single- and Double-Dopant Potential Structures";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 10.06.2019 - 14.06.2019; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 103 - 104.
  
  
• [CP-50] P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub:
  "High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport";
  Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13.
  
  
• [CP-49] P. Manstetten, L.F. Aguinsky, S. Selberherr, J. Weinbub:
  "High-Performance Ray Tracing for Nonimaging Applications";
  Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 20.
  
  
• [CP-48] A. Hössinger, P. Manstetten, G. Diamantopoulos, M. Quell, J. Weinbub:
  "High Performance Computing Aspects in Semiconductor Process Simulation";
  Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; (invited) 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 3 - 4.
  
  
• [CP-47] L. Filipovic, R. Orio:
  "Electromigration in Nano-Interconnects";
  Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; (invited) 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 2.
  
  
• [CP-46] L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "Three-Dimensional TCAD for Atomic Layer Processing";
  Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 24.05.2019 - 25.05.2019; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 5.
  
  
• [CP-45] V. Sverdlov, S. Selberherr:
  "Hopping in a Multiple Ferromagnetic Terminal Configuration";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 75 - 77.
  
  
• [CP-44] R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov:
  "Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 69 - 71.
  
  
• [CP-43] M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry, K. Rupp:
  "A Gauge-Invariant Wigner Equation for General Electromagnetic Fields";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 67 - 68.
  
  
• [CP-42] H. Kosina, M. Kampl:
  "Current Estimation in Backward Monte Carlo Simulations";
  Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 129 - 130.
  
  
• [CP-41] H. Kosina, G. Indalecio:
  "A Two-Particle Monte Carlo Method for Carrier Transport in the Presence of Electron-Electron Scattering";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 93 - 94.
  
  
• [CP-40] X. Klemenschits, S. Selberherr, L. Filipovic:
  "Fast Volume Evaluation on Sparse Level Sets";
  Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 113 - 114.
  
  
• [CP-39] M. Ballicchia, M. Nedjalkov, J. Weinbub:
  "Effects of Repulsive Dopants on Quantum Transport in a Nanowire";
  Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 115 - 116.
  
  
• [CP-38] M. Ballicchia, D.K. Ferry, M. Nedjalkov, J. Weinbub:
  "Linking Wigner Function Negativity to Quantum Coherence in a Nanowire";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 59 - 60.
  
  
• [CP-37] L.F. Aguinsky, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
  "A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description";
  Poster: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 20.05.2019 - 24.05.2019; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), 109 - 110.
  
  
• [CP-36] J. Weinbub, M. Ballicchia, D.K. Ferry, M. Nedjalkov:
  "Electron Interference and Wigner Function Negativity in Dopant Potential Structures";
  Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the 3^rd International Wigner Workshop (IW2)", (2019), 14 - 15.
  
  
• [CP-35] M. Nedjalkov, J. Weinbub, M. Ballicchia, S. Selberherr, I. Dimov, D.K. Ferry, K. Rupp:
  "Posedness of Stationary Wigner Equation";
  Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the 3^rd International Wigner Workshop (IW2", (2019), 32 - 33.
  
  
• [CP-34] R. Kosik, M. Thesberg, J. Weinbub, H. Kosina:
  "On the Consistency of the Stationary Wigner Equation";
  Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the 3^rd International Wigner Workshop (IW2", (2019), 30 - 31.
  
  
• [CP-33] M. Ballicchia, M. Nedjalkov, J. Weinbub:
  "Electron Evolution and Boundary Conditions in the Wigner Signed-Particle Approach";
  Talk: International Wigner Workshop (IW2), Chicago, IL, USA; 19.05.2019 - 20.05.2019; in "Book of Abstracts of the 3^rd International Wigner Workshop (IW2", (2019), 24 - 25.
  
  
• [CP-32] R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
  "Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM";
  Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 19.05.2019 - 22.05.2019; in "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34.
  
  
• [CP-31] M Vandemaele, B. Kaczer, S. E. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, G Groeseneken:
  "Full Vg/Vd Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019) doi:10.1109/IRPS.2019.8720406.
  
  
• [CP-30] A. Makarov, B. Kaczer, Ph Roussel, A. Chasin, A. Grill, M Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
  "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 31.03.2019 - 04.04.2019; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019) doi:10.1109/IRPS.2019.8720584.
  
  
• [CP-29] V. Sverdlov, S. Selberherr:
  "Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells";
  Talk: Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; 13.03.2019 - 15.03.2019; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), 151 - 153 doi:10.1109/EDTM.2019.8731330.
  
  
• [CP-28] G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub:
  "Recent Advances in High Performance Process TCAD";
  Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 25.02.2019 - 01.03.2019; in "CSE19 Abstracts", (2019), 335.
  
  
• [CP-27] S. Selberherr, L. Filipovic:
  "CMOS Compatible Gas Sensors";
  Talk: International Conference on Materials Science and Engineering, San Francisco, CA, USA; (invited) 18.02.2019 - 20.02.2019; in "Book of Abstracts of the International Conference on Materials Science and Engineering", (2019), 1.
  
  
• [CP-26] M. Benam, M. Wołoszyn, S. Selberherr:
  "Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach";
  Talk: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria; 18.12.2018 - 20.12.2018; in "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), 20 - 21.
  
  
• [CP-25] M. Ballicchia, J. Weinbub, I. Dimov, M. Nedjalkov:
  "Recent Advances of the Wigner Signed-Particle Approach";
  Talk: Annual Meeting of the Bulgarian Section of SIAM (BGSIAM), Sofia, Bulgaria; (invited) 18.12.2018 - 20.12.2018; in "Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM)", (2018), 18 - 19.
  
  
• [CP-24] V. Sverdlov, S. Selberherr:
  "Shot Noise Enhancement at Spin-dependent Hopping";
  Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 25.11.2018 - 30.11.2018; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), 6 - 7.
  
  
• [CP-23] V. Sverdlov, A. Makarov, S. Selberherr:
  "Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching";
  Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 25.11.2018 - 30.11.2018; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), 124 - 125.
  
  
• [CP-22] J. Weinbub, M. Ballicchia, M. Nedjalkov:
  "Electron Interference in a Double-Dopant Potential Structure";
  Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 25.11.2018 - 30.11.2018; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), 52 - 53.
  
  
• [CP-21] Yu. Illarionov:
  "On the Way to Commercial 2D Electronics...";
  Talk: 2^nd Zhejiang Sci-Tech University Forum for International Young Scholar, Hangzhou, China; (invited) 25.11.2018 - 27.11.2018; (2018).
  
  
• [CP-20] V. Sverdlov, S. Selberherr:
  "A Single-Spin Switch";
  Talk: International Electron Devices & Materials Symposium (IEDMS), Keelung, Taiwan; (invited) 13.11.2018 - 15.11.2018; in "Conference Abstract Book", (2018).
  
  
• [CP-19] V. Sverdlov, A. Makarov, S. Selberherr:
  "Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM";
  Poster: Micromagnetics: Analysis, Numerics, Applications (MANA), Vienna; 08.11.2018 - 09.11.2018; in "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018", (2018), 32.
  
  
• [CP-18] J. Lee, C. Medina-Bailón, S. Berrada, H. Carillo-Nunez, T. Sadi, V. Georgiev, M. Nedjalkov, S. Selberherr, A. Asenov:
  "Multi-Scale Simulation Study of the Strained Si Nanowire FETs";
  Talk: IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA; 14.10.2018 - 17.10.2018; in "Proceedings of IEEE 13^th Nanotechnology Materials and Devices Conference (NMDC", (2018) doi:10.1109/NMDC.2018.8605884.
  
  
• [CP-17] V. Sverdlov, S. Selberherr:
  "Actual Problems in the Field of Spintronics";
  Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 08.10.2018 - 10.10.2018; in "Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018", (2018), 40.
  
  
• [CP-16] M Vandemaele, B. Kaczer, Z. Stanojevic, S. E. Tyaginov, A. Makarov, A. Chasin, H. Mertens, D. Linten, G Groeseneken:
  "Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018) doi:10.1109/IIRW.2018.8727081.
  
  
• [CP-15] S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser:
  "Border Trap Based Modeling of SiC Transistor Transfer Characteristics";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 07.10.2018 - 11.10.2018; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018) doi:10.1109/IIRW.2018.8727083.
  
  
• [CP-14] V. Sverdlov, S. Selberherr:
  "Electron Spin for Modern and Future Microelectronics";
  Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 01.10.2018 - 05.10.2018; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018", (2018), 7.
  
  
• [CP-13] A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
  "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the 23^rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), 336 - 339 doi:10.1109/SISPAD.2018.8551728.
  
  
• [CP-12] C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
  "Impact of the Effective Mass on the Mobility in Si Nanowire Transistors";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the 23^rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), 297 - 300 doi:10.1109/SISPAD.2018.8551630.
  
  
• [CP-11] A. Makarov, V. Sverdlov, S. Selberherr:
  "Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the 23^rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), 186 - 189 doi:10.1109/SISPAD.2018.8551716.
  
  
• [CP-10] L. Filipovic, R. Orio:
  "Modeling the Influence of Grains and Material Interfaces on Electromigration";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the 23^rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), 83 - 87 doi:10.1109/SISPAD.2018.8551746.
  
  
• [CP-9] H. Kosina, M. Kampl:
  "Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 24.09.2018 - 26.09.2018; in "Proceedings of the 23^rd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), 18 - 21 doi:10.1109/SISPAD.2018.8551734.
  
  
• [CP-8] G. Indalecio, H. Kosina:
  "Monte Carlo Simulation of Electron-electron Interactions in Bulk Silicon";
  Poster: The 12^th International Conference on Scientific Computing in Electrical Engineering (SCEE 2018, Taormina; 23.09.2018 - 27.09.2018; in "Book of Abstracts of The 12^th International Conference on Scientific Computing in Electrical Engineerin", (2018), 97 - 98.
  
  
• [CP-7] A. Lahlalia, O. Le Neel, R. Shankar, S. Selberherr, L. Filipovic:
  "Enhanced Sensing Performance of Integrated Gas Sensor Devices";
  Poster: EUROSENSORS, Graz, Austria; 09.09.2018 - 12.09.2018; in "Proceedings of EUROSENSORS 2018", (2018), 5 doi:10.3390/proceedings2131508.
  
  
• [CP-6] K. Puschkarsky, H. Reisinger, C. Schlünder, W. Gustin, T. Grasser:
  "Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI";
  Talk: European Solid-State Device Research Conference (ESSDERC), Dresden, Germany; 03.09.2018 - 06.09.2018; in "Proceedings of the ESSDERC 48^th European Solid-State Device Research Conference", (2018), 218 - 221.
  
  
• [CP-5] M. Benam, M. Nedjalkov, S. Selberherr:
  "A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach";
  Talk: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), 34 - 35.
  
  
• [CP-4] L. Gnam, S. Selberherr, J. Weinbub:
  "Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms";
  Talk: Ninth International Conference on Numerical Methods and Applications (NM&A'18), Borovets, Bulgaria; 20.08.2018 - 24.08.2018; in "Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18)", (2018), 52.
  
  
• [CP-3] V. Sverdlov, S. Selberherr:
  "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor";
  Talk: SPIE Spintronics XI, San Diego, USA; (invited) 19.08.2018 - 23.08.2018; in "Proceedings of SPIE", (2018), 1073235-1 - 1073235-8 doi:10.1117/12.2319271.
  
  
• [CP-2] V. Sverdlov, A. Makarov, S. Selberherr:
  "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field";
  Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2018 - 11.07.2018; in "Proceedings of the 22^nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2018), 30 - 32.
  
  
• [CP-1] Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser:
  "Annealing and Encapsulation of CVD-MoS2 FETs with 10¹⁰ On/Off Current Ratio";
  Poster: IEEE Device Research Conference (DRC), Santa-Barbara, CA, USA; 24.06.2018 - 27.06.2018; in "Proceedings of the 76^th IEEE Device Research Conference (DRC)", (2018) doi:10.1109/DRC.2018.8442242.
  
  

• [DT-5] M. Kampl:
  "Investigating Hot-Carrier Effects Using the Backward Monte Carlo Method";
  Reviewer: H. Kosina, A. Garcia Loureiro, G. Hobler; E360, 2019, oral examination: 05.04.2019.
  
  
• [DT-4] C Koller:
  "The Role of Carbon in Creating Insulating Behavior in GaN-on-Si Buffers: A Physical Model";
  Reviewer: D. Pogany, T. Grasser, T. Uren; E362, 2019, oral examination: 22.01.2019.
  
  
• [DT-3] G. Rescher:
  "Behavior of SiC-MOSFETs Under Temperature and Voltage Stress";
  Reviewer: T. Grasser, P. Hadley, J. Cooper; E360, 2018, oral examination: 13.11.2018.
  
  
• [DT-2] V. Simonka:
  "Thermal Oxidation and Dopant Activation of Silicon Carbide";
  Reviewer: S. Selberherr, Y. Hijikata, U. Schmid; E360, 2018, oral examination: 05.11.2018.
  
  
• [DT-1] A. Grill:
  "Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs";
  Reviewer: T. Grasser, G. Meneghesso, D. Pogany; E360, 2018, oral examination: 22.10.2018.
  
  

• [MT-5] C. Lenz:
  "Curvature Based Surface Mesh Simplification";
  Supervisor: H. Pottmann, J. Weinbub; E104 und E360, 2019, final examination: 06.06.2019.
  
  
• [MT-4] C. Kandolf:
  "Numerische Lösung der Liouville-Von Neumann Gleichung in transformierten Koordinaten";
  Supervisor: H. Kosina; E360, 2019, final examination: 12.04.2019.
  
  
• [MT-3] C. Schleich:
  "Charakterisierung und Modellierung von SiC Transistoren";
  Supervisor: T. Grasser, M. Waltl; E360, 2019, final examination: 25.01.2019.
  
  
• [MT-2] P. Fleischanderl:
  "Charakterisierung von Hot Carrier Degradation in Siliziumtransistoren";
  Supervisor: T. Grasser, M. Waltl; E360, 2018, final examination: 26.11.2018.
  
  
• [MT-1] D. Waldhör:
  "Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects";
  Supervisor: T. Grasser, Y. Wimmer; E360, 2018, final examination: 05.10.2018.
  
  

• [BT-2] M. Baumann:
  "Current Control Unit for Defect Spectroscopy in Transistors";
  Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019.
  
  
• [BT-1] M. Kratzmann:
  "Enhanced Temperature Controller for Defect Spectroscopy";
  Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019.