1. Introduction

SILICON has long been the dominant semiconductor of choice for high-power, high-temperature, and high-frequency device applications. However, recently, wide bandgap semiconductors, particularly Silicon Carbide (SiC) has attracted much attention because it offers tremendous benefits over other semiconductor materials in a large number of industrial and military applications [1]. The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices [2]. The improvements made in SiC semiconductor device technology for electronic and optoelectronic applications are due in part to the commercial availability of SiC substrates of increasing diameter and quality. Apart from the significant progress achieved in this area, numerical simulation based on accurate device models is necessary to enhance the design and optimization of SiC devices.

Subsections

• 1.1 History of SiC
• 1.2 SiC Semiconductor Crystal Growth
• 1.3 SiC Physical and Electrical Properties
• 1.4 SiC Device Applications and Benefits
• 1.5 SiC Device Numerical Simulation
• 1.6 Scope of the Dissertation

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation