Publications

Next: List of Figures Up: Dissertation Helmut Brech Previous: 8 References

Publications

1
H.Y.A. Chung, D. Sowada, C. Wiegand, M. Mayer, H. Brech, "Untersuchung der Relaxation von InGaAs/GaAs-Heterostrukturen mit Röntgendiffraktometrie und Photolumineszenz," VW-Symposium, October 1994, Meersburg.

2
H. Brech, T. Simlinger, T. Grave, S. Selberherr, ”Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT,” Ninth III-V Semiconductor Device Simulation Workshop, May 9-10, 1996, Heeze, The Netherlands.

3
H. Brech, T. Simlinger, T. Grave, S. Selberherr, ”Current Transport in double Heterojunction HEMTs,” ESSDERC '96 - 26th European Solid State Device Research Conference (G. Baccarani and M. Rudan, eds.), Gif-sur-Yvette Cedex, France, pp. 873-876, Editions Frontiers, 1996.

4
T. Simlinger, H. Brech, T. Grave, S. Selberherr, ”Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT,” IEEE Trans. Electron Devices, Vol. 44, No. 5, pp. 700-707, 1997.

5
H. Brech, T. Grave, T. Simlinger, S. Selberherr, ”Influence of Gatelength on the DC-Characteristics and f_T of Pseudomorphic Power-HEMTs,” WOCSDICE 97 - 21st Workshop on Compound Semiconductor Devices and Integrated Circuits, May 1997, Scheveningen, The Netherlands, pp. 105-106.

6
H. Brech, T. Grave, A. Werthof, H.-J. Siweris, T. Simlinger, S. Selberherr, ”Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics,” ISCS - 24th International Symposium on Compound Semiconductos 1997, ThA6.

7
H. Brech, T. Grave, T. Simlinger, S. Selberherr, ”Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance,” IEEE GaAs-IC Symp. Tech. Digest 1997, pp. 6669.

8
H. Brech, T. Grave, T. Simlinger, S. Selberherr, ”Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations,” IEEE Trans. Electron Devices, Vol. 44, No. 11, pp. 18221828, 1997.

Next: List of Figures Up: Dissertation Helmut Brech Previous: 8 References

Helmut Brech

1998-03-11

1		H.Y.A. Chung, D. Sowada, C. Wiegand, M. Mayer, H. Brech, "Untersuchung der Relaxation von InGaAs/GaAs-Heterostrukturen mit Röntgendiffraktometrie und Photolumineszenz," VW-Symposium, October 1994, Meersburg.

2		H. Brech, T. Simlinger, T. Grave, S. Selberherr, ”Two-Dimensional Simulation of a Pseudomorphic HEMT with MINIMOS-NT,” Ninth III-V Semiconductor Device Simulation Workshop, May 9-10, 1996, Heeze, The Netherlands.

3		H. Brech, T. Simlinger, T. Grave, S. Selberherr, ”Current Transport in double Heterojunction HEMTs,” ESSDERC '96 - 26th European Solid State Device Research Conference (G. Baccarani and M. Rudan, eds.), Gif-sur-Yvette Cedex, France, pp. 873-876, Editions Frontiers, 1996.

4		T. Simlinger, H. Brech, T. Grave, S. Selberherr, ”Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT,” IEEE Trans. Electron Devices, Vol. 44, No. 5, pp. 700-707, 1997.

5		H. Brech, T. Grave, T. Simlinger, S. Selberherr, ”Influence of Gatelength on the DC-Characteristics and f_T of Pseudomorphic Power-HEMTs,” WOCSDICE 97 - 21st Workshop on Compound Semiconductor Devices and Integrated Circuits, May 1997, Scheveningen, The Netherlands, pp. 105-106.

6		H. Brech, T. Grave, A. Werthof, H.-J. Siweris, T. Simlinger, S. Selberherr, ”Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics,” ISCS - 24th International Symposium on Compound Semiconductos 1997, ThA6.

7		H. Brech, T. Grave, T. Simlinger, S. Selberherr, ”Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance,” IEEE GaAs-IC Symp. Tech. Digest 1997, pp. 6669.

8		H. Brech, T. Grave, T. Simlinger, S. Selberherr, ”Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations,” IEEE Trans. Electron Devices, Vol. 44, No. 11, pp. 18221828, 1997.