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Table 2.1
Parameters taken from [
16
]
Table 4.1
Parameters for the effective masses of Al
x
Ga
1x
As and In
y
Ga
1y
As
Table 4.2
Parameters for the band gap energy models
Table 5.1
Parameters for the estimation of
g
m max
(
60
)
Table 5.2
Parameters used for simulation of all DHHEMT.
Table 6.1
Geometry parameters of the simulated low noise HEMTs
Table 6.2
Parameters used for the simulation of the low noise HEMTs
Table 6.3
Transport parameters and doping
Table 6.4
Parasitic small signal parameters from parameter extraction of
HEMT A
with
L
W
= 160 µm.
Table 6.5
Parameters of the contributions to
C
G
.
Table 6.6
Coefficients of contributions to the total gate capacitance
C
G
.
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Dissertation Helmut Brech
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Helmut Brech
1998-
03-11