Own Publications

1

H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; IEICE Transactions on Electronics, E86-C (2003), 3; 421 - 426.

2

H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Microelectronics Reliability, 42 (2002), 9-11; 1457 - 1460.

3

H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "The Evolution of the Resistance and Current Density During Electromigration"; Poster: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 331 - 334.

4

W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric"; Presentation: European Simulation Symposium (ESS), Delft; 10-26-2003 - 10-29-2003; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 41 - 46.

5

Ch. Hollauer, H. Ceric, S. Selberherr: "Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach"; Presentation: European Solid-State Device Research Conference (ESSDERC), Estoril; 09-16-2003 - 09-18-2003; in: "Proceedings of the 33rd European Solid-State Device Research Conference", (2003), ISBN: 0-7803-7999-3; 383 - 386.

6

Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method"; Presentation: Industrial Simulation Conference (ISC), Valencia; 06-09-2003 - 06-11-2003; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; 154 - 158.

7

H. Ceric, A. Hössinger, T. Binder, S. Selberherr: "Modeling of Segregation on Material Interfaces by Means of the Finite Element Method"; Presentation: International Symposium on Mathematical Modeling (MATHMOD), Wien; 02-05-2003 - 02-07-2003; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; 139 - 145.

8

T. Binder, H. Ceric, A. Hössinger, S. Selberherr: "A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes"; Poster: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), Kobe; 09-04-2002 - 09-06-2002; in: "2002 International Conference on Simulation of Semiconductor Processes and Devices", (2002), ISBN: 4-89114-027-5; 183 - 186.

9

H. Ceric, S. Selberherr: "Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects"; Presentation: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 07-08-2002 - 07-12-2002; in: "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9; 140 - 144.

10

Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr: "Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts with FEM", Thermal Stresses 2005, Wien, Austria, 26-29 May, 2005.

11

S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser and S. Selberherr: ``Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis'', Eighth International Conference on Modeling and Simulation of Microsystems, Anaheim, USA, May, 2005.

12

S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser and S. Selberherr: ``Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress'', Proc. SPIE's 2nd Intl. Symposium on Microtechnologies for the New Millennium: VLSI Circuits and Systems, Sevilla, Spain, May, 2005.

13

H. Ceric, Ch. Hollauer, S. Holzer, T. Grasser, and S. Selberherr: "Comprehensive Analysis of Vacancy Dynamics Due to Electromigration"; Presentation: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 27-06-2005 - 01-07-2005; in: "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2005),