Own Publications

1

S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr, ``Modeling of Electron Mobility in Strained Si Devices,'' in Proc. SAFE, pp. 793-796, 2004.

2

V. Palankovski, S. Dhar, H. Kosina, and S. Selberherr, ``Improved Carrier Transport in Strained Si/Ge Device,'' Proc. Asia Pacific Microwave Conf., 2004.

3

S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr, ``A Physically-Based Electron Mobility Model for Strained Si Devices,'' in Proc. NSTI Nanotech, pp. 13-16, 2005.

4

S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck, and S. Selberherr, ``Electron Mobility Model for Strained-Si Devices,'' IEEE Trans.Electron Devices, vol. 52, no. 4, pp. 527-533, 2005.

5

S. Dhar, G. Karlowatz, E. Ungersboeck, and H. Kosina, ``Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Si,'' in Proc. SISPAD, pp. 223-226, 2005.

6

S. Dhar, G. Karlowatz, E. Ungersboeck, H. Kosina, and S. Selberherr, ``Modeling of Velocity Field Characteristics in Strained Si,'' in Intl. Workshop on Phys. of Semicon. Dev., pp. 1060-1063, 2005.

7

S. Dhar, H. Kosina, G. Karlowatz, E. Ungersboeck, T. Grasser, and S. Selberherr, ``A Tensorial High-Field Electron Mobility Model for Strained Silicon,'' in Intl. SiGe Dev. and Tech. Meet, pp. 72-73, 2006.

8

E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina, and S. Selberherr, ``Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon,'' in Intl. Workshop on Comp. Electr.., pp. 141-142, 2006.

9

S. Dhar, E. Ungersbock, H. Kosina, T. Grasser, and S. Selberherr, ``Electron Mobility Model for $\langle 110 \rangle$ Stressed Silicon Including Strain-Dependent Mass,'' Silicon Nanoelec. Workshop, pp. 153-154, 2006.

10

S. Dhar, E. Ungersboeck, H. Kosina, T. Grasser, and S. Selberherr, ``Analytical Modeling of Electron Mobility in Strained Germanium,'' in Proc. SISPAD, pp. 39-42, 2006.

11

S. Dhar, E. Ungersboeck, M. Nedjalkov, and V. Palankovski, ``Monte Carlo Simulation of the Electron Mobility in Strained Silicon,'' in Intl. Scien. and Appl. Scien. Conf, pp. 169-173, 2006.

12

S. Dhar, H. Kosina, G. Karlowatz, E. Ungersboeck, T. Grasser, and S. Selberherr, ``High-Field Electron Mobility Model for Strained-Silicon Devices,'' IEEE Trans.Electron Devices, vol. 53, no. 12, pp. 3054-3062, 2006.

13

E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina, and S. Selberherr, ``Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon,'' Journal of Computational Electronics, vol. 6, no. 1, pp. 55-58, 2007.

14

S. Dhar, E. Ungersbock, H. Kosina, T. Grasser, and S. Selberherr, ``Electron Mobility Model for $\langle 110 \rangle$ Stressed Silicon Including Strain-Dependent Mass,'' IEEE Trans.Nanotech., vol. 6, no. 1, pp. 97-100, 2007.

	Author	Co-Author	Total
Journals	3	1	4
Conferences	8	2	10
Total	11	3	14

Table 1: Publication Statistics.