Symbol | Unit | Description | ||
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1 | Engineering strain component ![]() |
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1 | Component ![]() |
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GPa | Component ![]() |
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GPa | Component ![]() |
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GPa | Component ![]() |
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GPa![]() |
Component ![]() |
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GPa![]() |
Component ![]() |
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eV | Electron affinity of the semiconductor | ||
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m![]() ![]() |
Electron diffusion coefficient | ||
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m![]() ![]() |
Hole diffusion coefficient | ||
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Vm![]() |
Electric field | ||
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eV | Energy | ||
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eV | Conduction band edge energy | ||
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eV | Valence band edge energy | ||
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eV | Band gap energy | ||
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V | Potential | ||
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eV | Work function difference between metal and semiconductor | ||
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m![]() ![]() |
Density of states | ||
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eV | Phonon energy | ||
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Am![]() |
Electron current density | ||
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Am![]() |
Hole current density | ||
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m![]() |
Wave number | ||
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m![]() |
Wave number vector | ||
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1 | Relative dielectric permittivity | ||
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1 | Relative magnetic permeability | ||
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m![]() ![]() ![]() |
Electron mobility | ||
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m![]() ![]() ![]() |
Hole mobility | ||
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m![]() ![]() ![]() |
Effective electron mobility | ||
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kg | Mass | ||
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kg | Carrier effective mass in the semiconductor |
Symbol | Unit | Description | ||
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m![]() |
Electron concentration | ||
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m![]() |
Intrinsic concentration | ||
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m![]() |
Concentration of donors | ||
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m![]() |
Concentration of acceptors | ||
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m![]() |
Effective density of states of the conduction band | ||
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m![]() |
Effective density of states of the valence band | ||
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m![]() |
Hole concentration | ||
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s | Time | ||
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s | Momentum relaxation time | ||
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K | Temperature | ||
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ms![]() |
Velocity | ||
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ms![]() |
Velocity vector | ||
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V | Gate-source voltage | ||
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V | Drain-source voltage |