For precise simulation a model was developed which allows the analysis of the transient behavior. Simulation in the frequency domain, simulation through simple modification of the hysteresis parameters might be numerically less complex, but will lead to reduced capabilities in comparison with the time domain. Especially in the context of arbitrarily shaped signals and relaxation effects an approach in the time domain is mandatory.
Depending on the concept several different approaches are commonly used. As already outlined in Section 3.2, frequency dependence can be added to compact models by the introduction of additional RC circuits. Other approaches calculate the change of direction of the dipoles with the help of field dependent transition probabilities [TAH+97], or, the speed of domain wall movement, if the focus lies on the analysis of material properties [Ish92][Sco95].
According to the concept of the device simulator MINIMOS-NT, an
analytic model based on differential equations was developed. A
common approach for the frequency dependence of linear dielectric
materials [Fas87] was extended. The approach started out from the
static, nonlinear equation
Experimental data show that these two terms can be adapted into the
physical properties in a limited range of frequencies only. In order
to improve this, a third term, which represents the nonlinearity of
the material,