In the following the most important scattering mechanisms for silicon are recollected along with the associated equations for the scattering rates, as are used in the semi-classical Boltzmann transport equation.
The provided equations stem from [110] and assume:
The values for the scattering parameters for silicon are very well-established. The values presented here are taken from [162], which references the standard literature [108, 163], and provides a complete summary of the scattering parameters for both silicon and germanium.
Phonons are the dominant scattering mechanism at room temperature and can be divided into intervalley and intravalley mechanisms. The total scattering rates for the latter are required to construct a scattering table for Monte Carlo simulations.