Section 3.3.1 explains the NAOS model and suggests that the main use for this processing technology is for the manufacture
of TFT for LCD. For this technology, the oxide must grow evenly across polycrystalline or doped
silicon, which is possible with NAOS and is the main reason for the continuing interest in this
technology [111], [112], [147].
Using the azeotropic NAOS model, after four hours of immersion in a 61wt% HNO concentration of a (100) oriented silicon wafer at 60
C
temperature, an oxide with a thickness of 1.18nm is grown, depicted in Figure 6.7.
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