Contents

• List of Figures
• List of Tables
• List of Abbreviations
• List of Symbols
  
  
• 1. Introduction
  • 1.1 Traditional Semiconductor Process Technologies
    • 1.1.1 Lithography
    • 1.1.2 Etching
    • 1.1.3 Deposition
    • 1.1.4 Chemical Mechanical Planarization
    • 1.1.5 Oxidation
    • 1.1.6 Ion Implantation
    • 1.1.7 Diffusion
  • 1.2 Approaches to Semiconductor Modeling
    • 1.2.1 Atomistic Approach
    • 1.2.2 Continuum Approach
  • 1.3 Motivation for Novel Processing Techniques
  • 1.4 Simulator Implementation
    • 1.4.1 Fast Level Set Framework
      • 1.4.1.1 Sparse Field Method
      • 1.4.1.2 H-RLE Data Structure
      • 1.4.1.3 Multiple Material Regions
    • 1.4.2 Surface Rate Calculation
      • 1.4.2.1 Transport Kinetics
      • 1.4.2.2 Surface Kinetics
  • 1.5 Outline of the Thesis
  
  
• 2. Silicon Oxidation Techniques
  • 2.1 Silicon Dioxide Properties
    • 2.1.1 Molecular Structure of the Silicon-Silicon Dioxide Interface
  • 2.2 Thermal Oxidation of Silicon
    • 2.2.1 Kinetics and Growth of Silicon Dioxide
      • 2.2.1.1 Dry Oxidation
      • 2.2.1.2 Wet Oxidation
      • 2.2.1.3 Temperature Effects
      • 2.2.1.4 Pressure Effects
      • 2.2.1.5 Crystal Orientation Effects
  • 2.3 Linear Parabolic Description of Thermal Oxidation Growth
    • 2.3.1 Deal-Grove Model
      • 2.3.1.1 Temperature
      • 2.3.1.2 Hydrostatic Pressure
      • 2.3.1.3 Crystal Orientation
    • 2.3.2 Limitations of the Deal-Grove Model
    • 2.3.3 Massoud Model
    • 2.3.4 Other One-Dimensional Oxide Growth Models
  • 2.4 Local Oxidation Nanolithography
    • 2.4.1 Technology Background
    • 2.4.2 Scanning Tunneling Microscope Lithography
    • 2.4.3 Atomic Force Microscope Lithography
      • 2.4.3.1 Contact Mode Lithography
      • 2.4.3.2 Intermittent Contact Mode Lithography
      • 2.4.3.3 Non-Contact Mode Lithography
  
  
• 3. Simulating Silicon Oxidation
  • 3.1 Thermal Oxidation Simulators
    • 3.1.1 History of Oxidation Simulators
    • 3.1.2 Visco-Elastic model using FEM
    • 3.1.3 Simulating Oxide Growth using Volume Expansion
  • 3.2 Oxidation Modeling using Linear Parabolic Equations
    • 3.2.1 Multiple moving interfaces
      • 3.2.1.1 One initial LS description
      • 3.2.1.2 LS describes pre-existing native material
      • 3.2.1.3 LS describes existence of a mask layer
    • 3.2.2 Separating Material Interfaces
    • 3.2.3 LS Surface Vector Motion
  • 3.3 Nitric Acid Oxidation
    • 3.3.1 NAOS Modeling
      • 3.3.1.1 Azeotropic NAOS Method
      • 3.3.1.2 Vapor NAOS Method
  • 3.4 Local Oxidation Nanolithography
    • 3.4.1 AFM Oxidation Mechanism and Kinetics
    • 3.4.2 Empirical Models for LON
      • 3.4.2.1 Surface Charge Density Distribution for a Hemispherical Needle Tip
      • 3.4.2.2 Surface Charge Density Distribution for a Rough Needle Tip
      • 3.4.2.3 Model for scanning tunneling microscope lithography
      • 3.4.2.4 Model for contact mode lithography
      • 3.4.2.5 Model for intermittent contact mode lithography
      • 3.4.2.6 Model for nanodots generated in NCM
      • 3.4.2.7 Model for nanowires generated in NCM
    • 3.4.3 Nanodot Modeling Using the MC Method
      • 3.4.3.1 Gaussian Particle Distribution
      • 3.4.3.2 Lorentzian Particle Distribution
      • 3.4.3.3 One-Dimensional Surface Charge Density Particle Distribution
      • 3.4.3.4 Two-Dimensional Surface Charge Density Particle Distribution
      • 3.4.3.5 Modeling Nanodots with Additional Point Charges
  
  
• 4. Novel Deposition and Etch Techniques
  • 4.1 Spray Pyrolysis Deposition
    • 4.1.1 Technology Background
    • 4.1.2 Atomization Procedure
    • 4.1.3 Aerosol Transport of Droplets
      • 4.1.3.1 Gravitational force
      • 4.1.3.2 Electrical force
      • 4.1.3.3 Stokes force
      • 4.1.3.4 Thermophoretic force
    • 4.1.4 Precursor Decomposition
      • 4.1.4.1 Process A: low temperature - large initial droplet
      • 4.1.4.2 Process B: lower/intermediate temperature - larger/medium droplet size
      • 4.1.4.3 Process C: intermediate/higher temperature - medium/smaller droplet size
      • 4.1.4.4 Process D: high temperature - small droplet size
  • 4.2 Bit Cost Scalable Memory Holes
    • 4.2.1 Technology Background
    • 4.2.2 Etching of Silicon Dioxide
    • 4.2.3 Etching of Silicon
  
  
• 5. Simulating Deposition and Etch Processes
  • 5.1 Spray Pyrolysis Deposition Modeling
    • 5.1.1 Modeling Droplet Atomization
    • 5.1.2 Modeling Droplet Transport
      • 5.1.2.1 Droplet transport using gravity and Stokes forces
      • 5.1.2.2 Droplet transport inside the heat zone
      • 5.1.2.3 Droplet transport including the electrical force
    • 5.1.3 Modeling Interaction between Droplet and Wafer Surface
      • 5.1.3.1 Deposition Model
  • 5.2 Modeling BiCS Memory Hole Etching
    • 5.2.1 Carbon Fluorides for Silicon Dioxide Etching
    • 5.2.2 Halogen Gas for Silicon Etching
  
  
• 6. Applications
  • 6.1 Silicon Oxidation
    • 6.1.1 Oxide Growth without Native Oxide
    • 6.1.2 Oxide Growth with Native Oxide Present
    • 6.1.3 Oxidation with Orientation effects
    • 6.1.4 Oxidation with LOCOS
  • 6.2 Nitric Acid Oxidation
  • 6.3 Atomic Force Microscope Lithography
    • 6.3.1 AFM Nanodot Generation
    • 6.3.2 AFM Nanowire Generation
    • 6.3.3 High Density Data Storage using AFM
    • 6.3.4 Silicon Nanowire Transistor
  • 6.4 Spray Pyrolysis Deposition
    • 6.4.1 YSZ Deposition using ESD Pyrolysis
    • 6.4.2 Tin Oxide Deposition using PSD Pyrolysis
  • 6.5 BiCS Memory Hole Etching
  
  
• 7. Summary and Outlook
  
  
• A. Droplet Transport Equations for Spray Pyrolysis Modeling
  • A.1 Transport under a Velocity-Dependent Acceleration
  • A.2 Transport under a Velocity- and Displacement-Dependent Acceleration
  
  
• B. Generating a Distribution for the Droplet Radius
  
  
• Bibliography
• List of Publications
• Curriculum Vitae