AFM |
atomic force microscope |
ALE |
atomic layer epitaxy |
BiCS |
bit cost scalable |
CM |
contact mode |
CMOS |
complementary metal oxide semiconductor |
CMP |
chemical mechanical planarization |
CPD |
cumulative probability distribution |
CVD |
chemical Vapor Deposition |
DC-SF |
dual control-gate with surrounding floating-gate |
DFT |
density functional theory |
DTG |
dynamic tubular grid |
ESD |
electrostatic spray deposition |
EUV |
extreme ultraviolet |
FDM |
finite difference method |
FEM |
finite element method |
FN |
Fowler-Nordheim |
FWHM |
full width at half maximum |
H-RLE |
hierarchical run length encoding |
HPCVD |
high pressure chemical vapor deposition |
HTO |
high temperature oxide |
IC |
integrated circuit |
ICM |
intermittent contact mode |
LAO |
local anodic oxidation |
LCD |
liquid crystal display |
LOCOS |
local oxidation of silicon |
LON |
local oxidation nanolithography |
LS |
Level Set |
MC |
Monte Carlo |
MOS |
metal oxide semiconductor |
NAOS |
nitric acid oxidation of silicon |
NCM |
non-contact mode |
PDF |
probability density function |
PECVD |
plasma enhanced chemical vapor deposition |
PSD |
pressurized spray deposition |
PVD |
physical vapor deposition |
RAH |
relative air humidity |
RF |
radio frequency |
RLE |
run length encoding |
RTA |
rapid thermal annealing |
SCD |
surface charge density |
SiNWT |
silicon nanowire transistor |
SOI |
silicon on insulator |
SPM |
scanning probe microscopy |
STI |
shallow trench isolation |
STM |
scanning tunneling microscope |
TCAD |
technology computer aided design |
TCAT |
terabit cell array transistor |
TEOS |
tetraethyl orthosilicate |
TFT |
thin film transistor |
TM |
tapping mode |
TMAH |
tetramethylammonium hydroxide |
TVD |
total variation diminishing |
UHV |
ultra high vacuum |
USB |
universal serial bus |
UV |
ultraviolet |
VSAT |
vertical stacked array transi |
YSZ |
yttria-stabilized zirconia |