![]() |
Flux on surface ![]() |
![]() |
Flux on source plane ![]() |
![]() |
Total flux through plane ![]() |
![]() |
Re-emission probability function |
![]() |
Hamiltonian |
![]() |
Layer of grid points,
![]() |
![]() |
Number of different material regions |
![]() |
Material region number |
![]() |
Normal unit vector on ![]() |
![]() |
Normal unit vector on ![]() ![]() |
![]() |
Pressure |
![]() |
Grid point index |
![]() |
Source plane |
![]() |
Particle species |
![]() |
Unit vector in the direction of vector motion |
![]() |
Surface rate |
![]() |
Description of the LS surface |
![]() |
Process time |
![]() |
Surface velocity |
![]() |
Point in space,
![]() |
![]() |
Total sputter rate |
![]() |
Flux distribution on ![]() |
![]() |
Surface reaction order |
![]() |
Mean curvature |
![]() |
Exponent in power cosine distribution |
![]() |
Bulk density |
![]() |
Surface coverage |
![]() |
Parabolic rate constant |
![]() |
Linear rate constant |
![]() |
Equilibrium concentration of oxidants in the ambient |
![]() |
Concentration of oxidants at the oxide surface |
![]() |
Concentration of oxidant at the Si-SiO![]() |
![]() |
Diffusivity |
![]() |
Gas-phase transport coefficient |
![]() |
Inverse Henry's law constant |
![]() |
Maximum height of the nitride after oxidation |
![]() |
Oxidant flux entering the gas ambient from the bulk |
![]() |
Oxidant flux diffusing through the oxide |
![]() |
Oxidant flux reacting on the silicon surface |
![]() |
Boltsmann constant |
![]() |
Reaction rate at the Si-SiO![]() |
![]() |
Maximum length of the nitride after oxidation |
![]() |
Number of oxidant molecules per unit volume of oxide grown |
![]() |
Molecular density of silicon |
![]() |
Molecular density of silicon dioxide |
![]() |
Partial pressure |
![]() |
Time |
![]() |
Temperature |
![]() |
Initial oxide growth |
![]() |
Oxide thickness |
![]() |
Time parameter accounting for ![]() |
![]() |
Barrier width between two interstitial sites |
![]() |
Normalization constant |
![]() |
Distance of point charge from the silicon surface |
![]() |
Fitting parameter ![]() |
![]() |
Electric field strength at ![]() |
![]() |
Humidity |
![]() |
Nanodot height |
![]() |
Lorentz distribution ![]() |
![]() |
Total number of charged dots for a rough needle tip |
![]() |
Electronic charge of an electron |
![]() |
Effective point charge |
![]() |
Total effective charge after adding all point charges |
![]() |
Desired distribution along the radius |
![]() |
Fitting parameter (1.5![]() ![]() |
![]() |
Pulse time |
![]() |
Applied potential at point ![]() |
![]() |
Bias voltage |
![]() |
Nanodot width, full width at half maximum |
![]() |
Value distributed according to the desired distribution |
![]() |
CPD function |
![]() |
Surface charge density on the wafer surface |
![]() |
maximum surface charge density |
![]() |
Wire orientation with respect to the (010) direction |
![]() |
Evenly distributed value |
![]() |
Radial droplet acceleration |
![]() |
Vertical droplet acceleration |
![]() |
Vertical linearization constant for the electric field |
![]() |
Radial droplet displacement |
![]() |
Vertical droplet displacement |
![]() |
Average diffusion coefficient |
![]() |
Generated electric field strength |
![]() |
Force due to the applied electric field |
![]() |
Force due to gravity |
![]() |
Stokes force |
![]() |
Thermophoretic force |
![]() |
Droplet charge |
![]() |
Maximum droplet charge |
![]() |
Distance between wafer and atomizing nozzle |
![]() |
Surface evaporation rate |
![]() |
Effect of the thermophoretic force on droplet's acceleration |
![]() |
H![]() |
![]() |
Molecular weight of evaporating liquid |
![]() |
Avogadro's number |
![]() |
Droplet radius |
![]() |
Nozzle outlet radius |
![]() |
Outer nozzle radius |
![]() |
Reynolds number |
![]() |
Schmidt's number |
![]() |
Lifetime of a droplet traveling through a heated ambient |
![]() |
Thickness of the thermal zone |
![]() |
Air temperature |
![]() |
Droplet temperature |
![]() |
Air temperature gradient |
![]() |
Air velocity |
![]() |
Radial droplet velocity |
![]() |
Vertical droplet velocity |
![]() |
Critical Weber number |
![]() |
Liquid-gas surface tension |
![]() |
Viscosity of air |
![]() |
Conductivity of air |
![]() |
Conductivity of droplet |
![]() |
Density of air |
![]() |
Droplet density |
![]() |
Fluid charge density |
![]() |
Applied electrical potential |
![]() |
Normalized potential
![]() |
![]() |
Deposition rate during SiO![]() |
![]() |
Polymer etch rate during SiO![]() |
![]() |
Bromine flux |
![]() |
Oxygen flux |
![]() |
Total etchant flux |
![]() |
Total ion flux |
![]() |
Total polymer flux |
![]() |
Bromine chemical etch rate constant |
![]() |
SiO![]() |
![]() |
Oxygen chemical etch rate constant |
![]() |
Bromine coverage during silicon etching |
![]() |
Oxygen coverage during silicon etching |
![]() |
Etchant surface coverage |
![]() |
Surface coverage of active sites on polymer |
![]() |
Polymer surface coverage |