List of Tables

• 2.1. Important properties of SiO$_2$ (silicon dioxide).
• 2.2. Rate constants describing (111) oriented silicon oxidation kinetics at 1atm pressure. For the corresponding values for (100) oriented silicon, $C_2$ values should be divided by 1.68.
• 2.3. Rate constants describing oxidation kinetics at 1atm pressure using the Massoud model for various silicon orientations and temperatures from [143].
• 2.4. Arrhenius expressions for pre-exponential constants $K_{1}^{0}$ and $K_{2}^{0}$, time constants $\tau _{1}^{0}$ and $\tau _{2}^{0}$, and activation energies $E_{K_{1}}$, $E_{K_{2}}$, $E_{\tau _{1}}$, and $E_{\tau _{2}}$ from the Massoud model presented in [143] and given in (2.40)-(2.44).
• 3.1. Effects of wire orientation on the nanowire height and width, with $t$=0.1ms, $V_b$=7V, and $h$=55%.
• 4.1. Characteristics of atomizers commonly used for spray pyrolysis.
• 6.1. Characteristics of the precursor solutions used for the simulations.