This model is a generalization of the FOWLER-NORDHEIM model by giving the
electron mass in the dielectric as a physically-based fitting parameter. The
current density is calculated by expression (3.118). Since the
electron mass in the dielectric
is usually given in terms of the free
electron mass m
, the fitting parameters is now the ratio
. Table D.2 shows the model keywords.
Table D.2:
FNLenzlingerSnow tunneling model keywords.
Symbol |
Keyword |
Type |
 |
mOx |
Real |
|
consistent |
Boolean |
The electron or hole barrier height
or
is calculated from
the band edge energies and cannot be given in the input deck.
A. Gehring: Simulation of Tunneling in Semiconductor Devices