This model is a generalization of the FOWLER-NORDHEIM model by giving the
electron mass in the dielectric as a physically-based fitting parameter. The
current density is calculated by expression (3.118). Since the
electron mass in the dielectric
is usually given in terms of the free
electron mass m, the fitting parameters is now the ratio
. Table D.2 shows the model keywords.
Table D.2:
FNLenzlingerSnow tunneling model keywords.
Symbol |
Keyword |
Type |
|
mOx |
Real |
|
consistent |
Boolean |
The electron or hole barrier height
or
is calculated from
the band edge energies and cannot be given in the input deck.
A. Gehring: Simulation of Tunneling in Semiconductor Devices