2.3 Novel Device Concepts

In addition to the ongoing scaling process, novel design concepts have arisen to enable a further increase in the integration density. These concepts span from strained-silicon MOS devices where the silicon channel is replaced by strained silicon to improve the mobility, to depleted-substrate devices such as single-gate or double-gate silicon on insulator (SOI) devices, FinFETs, vertical transistors, and even carbon nanotubes (CNTs) which represent a completely new device structure.

Subsections

• 2.3.1 Strained-Silicon Devices
• 2.3.2 Depleted-Substrate Devices
• 2.3.3 Vertical Transistors
• 2.3.4 Carbon Nanotube FET

A. Gehring: Simulation of Tunneling in Semiconductor Devices