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3.8.2 The Model of JIMÉNEZ et al.

A model for trap-assisted inelastic tunneling has been developed by JIMÉNEZ et al. [219]. Their model is based on the theory of non-radiative capture and emission of electrons by multiphonon processes [220]. The main difference to the models described before is that it does not require constant capture cross sections as fitting parameters but calculates them for each trap based on the trap energy level and the shape of the energy barrier.


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A. Gehring: Simulation of Tunneling in Semiconductor Devices