Symbol |
| Unit |
| Description |
|
| Kinetic exponent in the RD model | ||
|
| Electronic matrix element in the Franck-Condon approximation | ||
|
| Prefactor of the permanent component in the NBTI fit formula | ||
|
| Prefactor of the recoverable component in the NBTI fit formula | ||
|
| Interface area in the yz-plane | ||
|
| Parameter in the empirical relation of the universal recovery | ||
|
| Electron capture coefficient | ||
|
| Hole capture coefficient | ||
|
| Hole capture coefficient in the NMP model | ||
|
| Temperature independent prefactor of | ||
|
| Areal gate capacitance | ||
|
| Diffusion coefficient in the RDD model | ||
|
| Density of states of a one-dimensional, confined electron gas | ||
|
| Density of states of a three-dimensional, confined electron gas | ||
|
| Interface trap density of states | ||
|
| Electron density of states in the conduction band | ||
|
| Density of states of a one-dimensional electron gas | ||
|
| Product of and | ||
|
| Density of states of a two-dimensional electron gas | ||
|
| Oxide trap density of states | ||
|
| Hole density of state in the valence band | ||
|
| Density of states of a three-dimensional, confined hole gas | ||
|
| Density of states of a one-dimensional hole gas | ||
|
| Product of and | ||
|
| Density of states of a two-dimensional hole gas | ||
|
| Diffusion coefficient of the species in the RD model | ||
|
| Electron emission coefficient | ||
|
| Hole emission coefficient | ||
|
| Hole emission coefficient in the NMP model | ||
|
| Temperature independent prefactor of | ||
|
| Electron energy in the band edge energy diagram | ||
|
| Activation energy | ||
|
| Electron energy in the conduction/valance band | ||
|
| Conduction band edge energy | ||
|
| Conduction band edge energy in DFT calculations | ||
|
| Conduction band edge energy in the flat band case | ||
|
| Demarcation energy | ||
|
| Dissociation barrier in the reaction-limited model | ||
|
| Mean value of the dissociation barriers in the reaction-limited model | ||
|
| Fermi energy | ||
|
| Energy of the electron system in the state | ||
|
| Energy of a channel electron in the quasi-bound state | ||
|
| Energy of a channel hole in the quasi-bound state | ||
|
| Switching trap level for a transition from charge state to | ||
|
| Trap level | ||
|
| Trap level in the flat band case | ||
|
| Trap level of the oxygen vacancy in the TSM | ||
|
| Trap level of the center in the TSM | ||
|
| Trap level in the NMP model | ||
|
| Energy of the combined system of electrons and nuclei in the state | ||
|
| Valence band edge energy | ||
|
| Valence band edge energy in DFT calculations | ||
|
| Valence band edge energy in the flat band case | ||
|
| -component of electron energy | ||
|
| Exchange-correlation energy | ||
|
| Lineshape function | ||
|
| Franck-Condon factor | ||
|
| Equilibrium occupancy for the trap | ||
|
| Occupancy of a trap in state | ||
|
| Occupancy for the trap in state | ||
|
| Interface trap occupancy | ||
|
| Electron occupancy | ||
|
| Oxide trap occupancy | ||
|
| Hole occupancy | ||
|
| Trap occupancy | ||
|
| Equilibrium trap occupancy | ||
|
| Electron occupancy of the center in the TSM | ||
|
| Fermi-Dirac distribution | ||
|
| Oxide field | ||
|
| Reference field for the MPFAT mechanism | ||
|
| Oxide field during relaxation | ||
|
| Oxide field during stress | ||
|
| Trap occupancy for a set of states | ||
|
| Force on atom | ||
|
| Hydrogen trap density of states in the RDD model | ||
|
| Degeneracy of the valley | ||
|
| Hydrogen concentration in the RDD model | ||
|
| Magnetic field strength | ||
|
| General hamilton operator in the derivation of Fermi’s golden rule | ||
|
| Free hydrogen concentration in the RDD model | ||
|
| Hamilton operator of the channel in the derivation of Fermi’s golden rule | ||
|
| Hamilton operator of an atomic system | ||
|
| Drain current | ||
|
| Initial drain current | ||
|
| Electron wavevector | ||
|
| Coupling constant between and in Yang’s model | ||
|
| Forward rate of a reaction/transition | ||
|
| Attempt frequency in the reaction-limited model | ||
|
| Reverse rate of a reaction/transition | ||
|
| -component of the electron wavevector | ||
|
| Length of the substrate in the -direction | ||
|
| Effective mass of the electrons | ||
|
| Effective mass of the electrons for the valley index | ||
|
| Effective mass of the holes | ||
|
| Effective mass of the holes for the valley index | ||
|
| Tunneling mass of the charge carriers | ||
|
| Oscillator mass in the harmonic approximation | ||
|
| Matrix element for a vibronic transition from state to state | ||
|
| Matrix element for a transition from state to state | ||
|
| Electron density | ||
|
| Power law exponent of permanent component in the NBTI fit formula | ||
|
| Power law exponent of recoverable component in the NBTI fit formula | ||
|
| Power law exponent in the RD model | ||
|
| Acceptor concentration | ||
|
| Effective conduction band weight | ||
|
| Effective density of conduction states in the RDD model | ||
|
| Donor concentration | ||
|
| Concentration of interface states per area | ||
|
| Initial concentration of interface states per area | ||
|
| Number of oxide charges per area | ||
|
| Trap density | ||
|
| Effective valence band weight | ||
|
| Number of states for a free electrons/holes gas in the -direction | ||
|
| Number of states for a free electrons/holes gas in the -plane | ||
|
| Number of states for a free electrons/holes gas in the -volume | ||
|
| Hole density | ||
|
| Transition probability from state to state | ||
|
| Configuration coordinate | ||
|
| Configuration coordinate at the energy minimum | ||
|
| Areal interface charges | ||
|
| Areal oxide charges | ||
|
| Vibronic transition rate from state to state | ||
|
| Electron capture rate | ||
|
| Hole capture rate | ||
|
| Electron tunneling rate | ||
|
| Transition rate of a trap during equilibrium conditions | ||
|
| Electron tunneling rate from the charge state to in the LSM | ||
|
| Electron emission rate | ||
|
| Hole emission rate | ||
|
| Rate for the transition | ||
|
| Hole tunneling rate | ||
|
| Hole tunneling rate from the charge state to in the LSM | ||
|
| Ratio of the vibration frequencies in an NMP transition | ||
|
| Spatial coordinates of electron | ||
|
| Transition rate matrix | ||
|
| Spatial coordinates of atom | ||
|
| Scaling factor for stress/relaxation curves | ||
|
| Scaling factor during relaxation | ||
|
| Scaling factor during stress | ||
|
| Prefactor of the scaling factor | ||
|
| Action in the WKB method | ||
|
| Huang-Rhys factor for an NMP transition | ||
|
| Time | ||
|
| Thickness of the insulator | ||
|
| Relaxation time | ||
|
| Stress time | ||
|
| First measurement point during stress | ||
|
| Temperature | ||
|
| Transmission coefficient for tunneling through the conduction band | ||
|
| Transmission coefficient for tunneling through the valence band | ||
|
| Temperature during equilibrium conditions | ||
|
| Transition from state to state | ||
|
| Transitions between the states to state | ||
|
| Chain of the transitions and | ||
|
| Temperature during relaxation | ||
|
| Temperature during stress | ||
|
| Electron kinetic energy operator | ||
|
| Nucleus kinetic energy operator | ||
|
| Adiabatic potential of an atomic system | ||
|
| for charge state | ||
|
| in the minimum configuration of state | ||
|
| Effective electron potential | ||
|
| Thermal velocity of the electrons | ||
|
| Thermal velocity of the holes | ||
|
| Velocity of atom | ||
|
| Defect potential | ||
|
| Channel potential in the derivation of Fermi’s golden rule | ||
|
| Gate bias during equilibrium conditions | ||
|
| Interatomic empirical potential | ||
|
| Gate bias | ||
|
| Energy of the system in state in the TWM and the CDW | ||
|
| Initial energy of the system in state in the TWM | ||
|
| Gate bias during relaxation | ||
|
| Gate bias during stress | ||
|
| Threshold voltage | ||
|
| Initial threshold voltage | ||
|
| Threshold voltage extracted from OTF measurements | ||
|
| Initial threshold voltage extracted from OTF measurements | ||
|
| Trap potential in the derivation of Fermi’s golden rule | ||
|
| Operator for the electron-nucleus Coulomb interactions | ||
|
| Operator for the electron-electron Coulomb interactions | ||
|
| Operator for the nucleus-nucleus Coulomb interactions | ||
|
| WKB factor for tunneling through the conduction band | ||
|
| WKB factor for tunneling through the valence band | ||
|
| Direction perpendicular to the substrate-insulator interface | ||
|
| Position of the substrate-insulator interface | ||
|
| Characteristic tunneling length for electrons | ||
|
| Characteristic tunneling length for holes | ||
|
| Position of the trap | ||
|
| Position of the tunneling hole front | ||
|
| Density of the diffusing species in the RD model | ||
|
| Direction parallel to the substrate-insulator interface | ||
|
| Direction parallel to the substrate-insulator interface | ||
|
| Charge state of the diffusing species in the RD model | ||
|
| Charge state of the diffusing species in the RDD model | ||
|
| Characteristic exponent in the reaction-limited model | ||
|
| Parameter in the empirical relation of the universal recovery | ||
|
| Field dependence factor of the thermal barrier in the TSM | ||
|
| Stress parameter in the TWM | ||
|
| Stress parameter in the CDW model | ||
|
| Time step in molecular dynamics | ||
|
| Change in the interface trap density of states | ||
|
| Change in the trap occupancy in state | ||
|
| Change in the oxide trap occupancy | ||
|
| Change in the trap occupancy | ||
|
| Energy barrier for charge trapping in the model of Kirton and Uren | ||
|
| Energy barrier for hole capture of the oxygen vacancy in the TSM | ||
|
| Energy barrier for hole capture of the center in the TSM | ||
|
| Relaxation barrier to the oxygen vacancy in the TSM | ||
|
| Thermal barrier for the hydrogen transition in the TSM | ||
|
| referenced to the substrate valence bandedge | ||
|
| referenced to the substrate valence bandedge | ||
|
| Change in the number of interface charges per area | ||
|
| Change in the number of oxide charges per area | ||
|
| Change in the areal interface charges | ||
|
| Change in the areal oxide charges | ||
|
| Change in the threshold voltage | ||
|
| Change in the threshold voltage during relax | ||
|
| Change in the threshold voltage during stress | ||
|
| Change in threshold voltage extracted from OTF measurements | ||
|
| NMP barrier for the transition | ||
|
| Electric permittivity | ||
|
| Energy level of the bound state | ||
|
| Kohn-Sham eigenvalue | ||
|
| Energy barrier for the transition in the NMP model | ||
|
| Thermodynamic trap level for a transition from charge state to | ||
|
| Energy difference between the state and in the NMP model | ||
|
| Square root of the WKB factor | ||
|
| Mean value of the distribution of in Yang’s model | ||
|
| Mobility in the RD model | ||
|
| Mobility of the diffusing species in the RDD model | ||
|
| Valley index | ||
|
| Attempt frequency | ||
|
| Normalized relaxation time | ||
|
| Occupation probability for being in state | ||
|
| Occupation probability for set of states | ||
|
| Equilibrium occupation probability for set of states | ||
|
| Charge density | ||
|
| Density of traps | ||
|
| Trapped hydrogen density in the RDD model | ||
|
| Ground state charge density | ||
|
| Spread of the distribution of in Yang’s model | ||
|
| Spread of dissociation barrier in the reaction-limited model | ||
|
| Cross section for an electon transition in the TSM model | ||
|
| Cross section for an electron tunneling in the ETM | ||
|
| Temperature-independent prefactor of | ||
|
| Cross section for a hole transition in the SRH model | ||
|
| Cross section for a hole transition in the eNMP model | ||
|
| Cross section for a hole transition in the TSM model | ||
|
| Cross section for hole tunneling in the ETM | ||
|
| Temperature-independent prefactor of | ||
|
| Temperature-independent prefactor of | ||
|
| Temperature-independent prefactor of | ||
|
| Transition time constant in the reaction-limited and the Yang model | ||
|
| Hole capture time constant over the state in the eNMP model | ||
|
| Hole capture time constant over the state in the eNMP model | ||
|
| Capture time constant | ||
|
| Electron capture time constant | ||
|
| Hole capture time constant | ||
|
| Minimal in the eNMP model | ||
|
| Minimal in the eNMP model | ||
|
| Emission time constant | ||
|
| Hole emission time constant over the state in the eNMP model | ||
|
| Hole emission time constant over the state in the eNMP model | ||
|
| Electron emission time constant | ||
|
| Hole emission time constant | ||
|
| Minimal in the eNMP model | ||
|
| Minimal in the eNMP model | ||
|
| Electron capture time constant as defined in the TSM model | ||
|
| Hole capture time constant as defined in the ETM | ||
|
| Hole capture time constant as defined in the eNMP model | ||
|
| Hole capture time constant as defined in the SRH model | ||
|
| Hole capture time constant as defined in the TSM model | ||
|
| Reduced electron capture time in the ETM | ||
|
| Reduced hole capture time in the ETM | ||
|
| Wavefunction of the combined system of electrons and nuclei | ||
|
| Electric potential | ||
|
| Surface potential | ||
|
| Potential energy of electrons/holes | ||
|
| Left/Right border of the tunnel barrier | ||
|
| Wavefunction of an nuclei system in state | ||
|
| Single-electron wavefunction in state | ||
|
| Kohn-Sham orbitals | ||
|
| Electron channel wavefunction of the quasi-bound state | ||
|
| Hole channel wavefunction of the quasi-bound state | ||
|
| Wavefunction of an electron system in state | ||
|
| Wavefunction of an electron system in the ground state | ||
|
| Oscillator frequency in the harmonic approximation | ||