|
Device 2
To compare Device 1 to an equivalent MOSFET a second device has been investigated
which has a small body contact added to pin the potential of the body to fixed values.
Device 3
This device has been generated by MINIMOS 6, the device simulator with which the
Monte Carlo simulations have been performed. It has a gate-length of
.
Gate-oxide and silicon-film thickness as well as the doping concentrations have the same
values as in Device 1.
Device 4
For comparison and verification an SOI device has been modeled after the
"Well-Tempered" MOSFET [57] using the doping profiles
available, including the super steep retrograde (SSR) channel doping and
source/drain halo-doping. To achieve a partially depleted device a substrate doping of
has been assumed, and the substrate
thickness has been limited to
.
M. Gritsch: Numerical Modeling of Silicon-on-Insulator MOSFETs PDF