Buried-channel devices exhibit a higher minority carrier low-field mobility than the surface-channel devices due to less surface scattering. Is seems that they show advantages over the surface-channel devices in the reliability issue [468][323][312]. The Buried-channel design has, however, some drawbacks comparing with the surface-channel design:
[514]. This effect can compensate the benefit from a higher
minority-carrier mobility [361].
-buried-channel MOSFETs with 
gates in the
quarter-
range with quite small 2D effects have been
designed [351][301]. The key issue in achieving this goal
was the application of very shallow source/drain junctions.
). This poor turn-off characteristic is
produced by the re-ionization of the compensating shallow implant by
reducing the gate bias, which leads to a lower decrease of the amount
of channel charge in the subthreshold region compared to the
surface-channel devices [139]. It is established in the
literature that devices for cryo-temperature applications must be of
surface-channel type [141]. Recently experiments have shown
that the ionization of dopants takes place in the buried-channel devices
at liquid-nitrogen temperature for short channel lengths and not too low
drain voltages (at sufficiently large lateral fields), thus avoiding the
freeze-out problems [142]. The effect has been explained
by the ionization barrier lowering due to the Poole-Frenkel effect.
-buried-channel MOSFETs exhibit less two-dimensional effects than
their -buried-channel counterparts. Therefore 
-gate CMOS technology
seems to be more scalable than CMOS technology [363].