When compared to n-type semiconductors, some of the equations from (B.1) to
(B.13) differ for p-type semiconductors. Due to their exchanged concentrations of
holes and electrons
![]() |
![]() | (B.14) |
with
![]() | (B.15) |
the space-charge-density becomes
![]() | (B.16) |
Again, the charge at the surface (B.16) can be approximated for certain
surface potentials .
For accumulation with , the term
dominates the root in
(B.15), making
.
Starting from the flatband condition at , first depletion of holes and
afterwards weak inversion set in till
is fulfilled. In these two regimes
.
Finally, beyond the first term in (B.15), starts to dominate
by outbalancing the negative exponent in
which yields
.
In Fig. B.2 the different operating conditions with its resulting surface charge
density at the interface side of the semiconductor are opposite for both
p-type and n-type semiconductors. The above mentioned approximations very
well fit the exact solutions (B.13) and (B.16), as deviations are only present at
the intersections of the different regimes. Furthermore, it is shown that
, where the subscripts
and
denote the type of
semiconductor.