When compared to n-type semiconductors, some of the equations from (B.1) to (B.13) differ for p-type semiconductors. Due to their exchanged concentrations of holes and electrons
|
| (B.14) |
with
| (B.15) |
the space-charge-density becomes
| (B.16) |
Again, the charge at the surface (B.16) can be approximated for certain surface potentials .
For accumulation with , the term dominates the root in (B.15), making .
Starting from the flatband condition at , first depletion of holes and afterwards weak inversion set in till is fulfilled. In these two regimes .
Finally, beyond the first term in (B.15), starts to dominate by outbalancing the negative exponent in which yields .
In Fig. B.2 the different operating conditions with its resulting surface charge density at the interface side of the semiconductor are opposite for both p-type and n-type semiconductors. The above mentioned approximations very well fit the exact solutions (B.13) and (B.16), as deviations are only present at the intersections of the different regimes. Furthermore, it is shown that , where the subscripts and denote the type of semiconductor.