The process described above may be also triggered by an optical excitation, which is usually called multi-phonon emission (MPE), and is illustrated in the center of Fig. 8.6. Following the FC principle, the radiative transition takes place at constant and moves the defect configuration from the minimum up to the -curve via photon absorption. The necessary energy of this photon can be obtained from the general binding energy , which is derived in Appendix D.1 as
| (8.19) |
Evaluated at gives an energy of , with . This photon energy exceeds the energy needed for a simple electronic SRH transition, where the barrier only results from the difference of the corresponding energy levels, , by . To obtain defect equilibrium within , has to be released via structural relaxation (phonons) afterwards. Therefore is also called relaxation energy. The Huang-Rhys factor in it gives the number of photons emitted after the FC transition [153] and determines the strengh of the electron-phonon coupling [157].
Now the loop can be closed by a photon emission of and again structural relaxation () back to . Consequently, . Note that the energy of the two photons and differs by the sum of the two relaxation energies which are generally not equal due to non-linear electron-phonon coupling.
When electron-phonon coupling is neglected as done in the SRH model, the defect equilibrium does not change. This can be seen by modifying Fig. 8.6 (Center) such that . Consequently, the photon energies have to be equal now and the relaxation energy . As already known, such a harsh approximation it is not able to explain the experimental results of BTI. However, since the calculation of transition barriers with and , as would be necessary for a physically more correct model, is quite complex, linear electron-phonon coupling will be used instead5 . Therein still holds, but the vibrational frequencies are not allowed to change anymore, i.e. . Using linear coupling simplifies the model picture a lot. For example, the relaxation energy is now constant too, making the difference of the absorbed and emitted photon exactly [159, 130].
So far the defect system was treated at . At higher temperatures () not only the ground states at the minimum but also higher energies are occupied. For these states the absorbed and emitted photon energies and are reduced, which is called thermal broadening of the absorption and emission lines [130].