The process described above may be also triggered by an optical excitation,
which is usually called multi-phonon emission (MPE), and is illustrated in the
center of Fig. 8.6. Following the FC principle, the radiative transition takes place
at constant and moves the defect configuration from the minimum
up
to the
-curve via photon absorption. The necessary energy of this photon can
be obtained from the general binding energy
, which is
derived in Appendix D.1 as
![]() | (8.19) |
Evaluated at gives an energy of
, with
.
This photon energy exceeds the energy needed for a simple electronic SRH
transition, where the barrier only results from the difference of the corresponding
energy levels,
, by
. To obtain defect equilibrium within
,
has to be released via structural relaxation (phonons) afterwards. Therefore
is also called relaxation energy. The Huang-Rhys factor
in it gives the
number of photons emitted after the FC transition [153] and determines the
strengh of the electron-phonon coupling [157].
Now the loop can be closed by a photon emission of and again structural
relaxation (
) back to
. Consequently,
. Note that
the energy of the two photons
and
differs by the sum of the
two relaxation energies which are generally not equal due to non-linear
electron-phonon coupling.
When electron-phonon coupling is neglected as done in the SRH model, the
defect equilibrium does not change. This can be seen by modifying Fig. 8.6
(Center) such that . Consequently, the photon energies have to
be equal now and the relaxation energy
. As already known,
such a harsh approximation it is not able to explain the experimental
results of BTI. However, since the calculation of transition barriers with
and
, as would be necessary for a physically more correct
model, is quite complex, linear electron-phonon coupling will be used
instead5 .
Therein still
holds, but the vibrational frequencies are not allowed to
change anymore, i.e.
. Using linear coupling simplifies the model
picture a lot. For example, the relaxation energy is now constant too,
making the difference of the absorbed and emitted photon exactly
[159, 130].
So far the defect system was treated at . At higher temperatures
(
) not only the ground states at the minimum but also higher energies
are occupied. For these states the absorbed and emitted photon energies
and
are reduced, which is called thermal broadening of the absorption and
emission lines [130].