Kerber et al. [19] were the first to circumvent the problem of slow response times
by developing the fast pulsed -method shown in Fig. 2.4. They adapted
the MSM-technique and used a digital storage oscilloscope (DSO) to
quickly measure the voltages and currents of the device under test (DUT)
and a programmable pulse-pattern generator. The basic principle of the
fast pulsed
-method is depicted in Fig. 2.5 for NBTI (top) and
PBTI (bottom) and works as follows: During initialization, stress or
relaxation,
is set to the corresponding constant values
,
or
. The pulse generator triggers the fast
-measurement by
sending a gate-pulse reaching from accumulation to inversion when in
relaxation-mode, respectively from inversion to accumulation when in
stress-mode.
Since the DSO can only measure voltages, the actual drain current is
calculated via the voltage drop across (Fig. 2.4), assuming
small
enough so that the transistor stays in the ohmic region.
With standard equipment, pulse times between [19],
[20, 21, 22, 23, 24, 25], down to
[26] can be achieved. The form of used
pulses varies from trapezoidal [19, 21, 26], over rectangular with only very
small rise and fall times compared to the pulse width itself [21], up to
triangular [20, 21, 22, 24, 25]. By varying the rise and fall times of the
pulses the trapping and detrapping kinetics can be analyzed [21]. To avoid
spurious hystereses (parasitic capacitances) in the
-characteristics
between the rising and falling edges of the pulses, the cable length has to be
adjusted in order to ensure the synchronized signal transmission to the DSO
[25, 20].
The major issue with this method is that the gain in speed is partly
consumed by the fact that the resolution of the DSO is too limited for real
‘single’-pulse-measurements [12]. After the necessary averaging of a few
() pulses, the measurement time increases by the averaging factor.
Furthermore, the synchronization between the pulse-pattern generator and the
DSO turns out to be tricky.