C. Own Publications

1. A. Sheikholeslami, C. Heitzinger, H. Puchner, and S. Selberherr.
   Simulation of Void Formation in Interconnect Lines.
   In Proc. SPIE's First International Symposium on Microtechnologies for the New Millennium 2003, Maspalomas, Gran Canaria, Spain, May 2003.
   (Submitted for publication).

2. C. Heitzinger, A. Hössinger, and S. Selberherr.
   On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results.
   IEEE Trans. Computer-Aided Design of Integrated Circuits and Systems, 2002.
   (Submitted for publication).

3. C. Heitzinger and S. Selberherr.
   On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem.
   Microelectronics Journal, 2002.
   (Submitted for publication).

4. C. Heitzinger, A. Sheikholeslami, H. Puchner, and S. Selberherr.
   Predictive Simulation of Void Formation during the Deposition of Silicon Nitride and Silicon Dioxide Films.
   In Proc. 203rd Meeting of the Electrochemical Society (ECS), Paris, France, April 2003.
   (In print).

5. C. Heitzinger, A. Hössinger, and S. Selberherr.
   An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results.
   In I. Troch and F. Breitenecker, editors, Proc. 4th IMACS Symposium on Mathematical Modelling (MathMod 2003), Vienna, Austria, February 2003.
   (In print).

6. C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, and S. Selberherr.
   Simulation of Arsenic In-Situ Doping with Poly-Silicon CVD and its Application to High Aspect Ratio Trenches.
   IEEE Trans. Computer-Aided Design of Integrated Circuits and Systems, 2002.
   (In print).

7. C. Heitzinger, A. Sheikholeslami, and S. Selberherr.
   Predictive Simulation of Etching and Deposition Processes Using the Level Set Method.
   In J. Dabrowski, editor, Proc. Challenges in Predictive Process Simulation (ChiPPS 2002), pages 65-66, Prague, Czech Republic, October 2002.

8. C. Heitzinger, J. Fugger, O. Häberlen, and S. Selberherr.
   On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method.
   In G. Baccarani, E. Gnani, and M. Rudan, editors, Proc. 32th European Solid-State Device Research Conference (ESSDERC 2002), pages 347-350, Florence, Italy, September 2002. University of Bologna.

9. C. Heitzinger, J. Fugger, O. Häberlen, and S. Selberherr.
   Simulation and Inverse Modeling of TEOS Deposition Processes Using a Fast Level Set Method.
   In Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2002), pages 191-194, Kobe, Japan, September 2002. Business Center for Academic Societies, Japan.

10. C. Heitzinger and S. Selberherr.
    On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes Using the Level Set Method.
    In Proc. 16th European Simulation Multiconference: Modelling and Simulation 2002 (ESM 2002), pages 653-660, Darmstadt, Germany, June 2002.

11. T. Grasser, H. Kosina, C. Heitzinger, and S. Selberherr.
    Characterization of the Hot Electron Distribution Function Using Six Moments.
    J. Appl. Phys., 91(6):3869-3879, 2002.

12. C. Heitzinger and S. Selberherr.
    A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution.
    In Proc. 23rd IEEE International Conference on Microelectronics (MIEL 2002), pages 431-434, Niš, Yugoslavia, May 2002.

13. T. Grasser, H. Kosina, C. Heitzinger, and S. Selberherr.
    An Impact Ionization Model Including an Explicit Cold Carrier Population.
    In Proc. 5th Intl. Conf. on Modeling and Simulation of Microsystems (MSM 2002), pages 572-575, San Juan, Puerto Rico, USA, April 2002.

14. C. Heitzinger and S. Selberherr.
    An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers.
    Microelectronics Journal (Design, Modeling and Simulation in Microelectronics and MEMS; Smart Electronics and MEMS), 33(1-2):61-68, 2002.

15. T. Grasser, H. Kosina, C. Heitzinger, and S. Selberherr.
    An Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations.
    Appl. Phys. Lett., 80(4):613-615, January 2002.

16. W. Pyka, C. Heitzinger, N. Tamaoki, T. Takase, T. Ohmine, and S. Selberherr.
    Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD.
    In D. Tsoukalas and C. Tsamis, editors, Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001), pages 124-127, Athens, Greece, September 2001. Springer, Wien, New York.

17. A. Gehring, C. Heitzinger, T. Grasser, and S. Selberherr.
    TCAD Analysis of Gain Cell Retention Time for SRAM Applications.
    In D. Tsoukalas and C. Tsamis, editors, Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001), pages 416-419, Athens, Greece, September 2001. Springer, Wien, New York.

18. C. Heitzinger and S. Selberherr.
    Optimization for TCAD Purposes Using Bernstein Polynomials.
    In D. Tsoukalas and C. Tsamis, editors, Proc. Simulation of Semiconductor Processes and Devices (SISPAD 2001), pages 420-423, Athens, Greece, September 2001. Springer, Wien, New York.

19. C. Heitzinger, T. Binder, and S. Selberherr.
    Parallel TCAD Optimization and Parameter Extraction for Computationally Expensive Objective Functions.
    In Proc. 15th European Simulation Multiconference: Modelling and Simulation 2001 (ESM 2001), pages 534-538, Prague, Czech Republic, June 2001.

20. T. Binder, C. Heitzinger, and S. Selberherr.
    A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks.
    In Proc. Modeling and Simulation of Microsystems (MSM 2001), pages 466-469, Hilton Head Island, South Carolina, USA, March 2001.

21. C. Heitzinger and S. Selberherr.
    An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers.
    In Proc. SPIE International Symposium on Microelectronics and Assembly: Design, Modeling, and Simulation in Microelectronics (ISMA 2000), pages 279-289, Singapore, December 2000.