Own Publications

Dhar05a

S. Dhar, G. Karlowatz, E. Ungersboeck, and H. Kosina.
Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon.
In Proc. Simulation of Semiconductor Processes and Devices, pages 223-226, 2005.

Dhar05b

S. Dhar, G. Karlowatz, E. Ungersboeck, H. Kosina, and S. Selberherr.
Modeling of Velocity Field Characteristics in Strained Si.
In Proceedings of the Fourteenth International Workshop on the Physics of Semiconductor Devices, pages 1060-1063, 2005.

Dhar06a

S. Dhar, H. Kosina, G. Karlowatz, E. Ungersboeck, T. Grasser, and S. Selberherr.
A tensorial high-field electron mobility model for strained silicon.
SiGe Technology and Device Meeting, ISTDM 2006, pages 72-73, 2006.

Dhar06b

S. Dhar, H. Kosina, G. Karlowatz, S. E. Ungersboeck, T. Grasser, and S. Selberherr.
High-Field Electron Mobility Model for Strained-Silicon Devices.
IEEE Trans.Electron Devices, vol. 53, no. 12, pages 3054-3062, 2006.

Gröschl03

M. Gröschl, R. Thalhammer, G. Karlowatz, E. Benes, and H. Nowotny.
Viscosity Monitoring with a quartz crystal thickness shear resonator.
Proc. of the 1st Congress of the Alps Adria Acoustics Associaton, pages 663-672, 2003.

Karlowatz06a

G. Karlowatz, E. Ungersboeck, W. Wessner, and H. Kosina.
Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon.
In Proc. Simulation of Semiconductor Processes and Devices, pages 63-66, Monterey, USA, 2006.

Karlowatz06b

G. Karlowatz, E. Ungersboeck, W. Wessner, H. Kosina, and S. Selberherr.
``Analysis of hole transport in arbitrarily strained germanium'', volume 3 of ECS Transactions.
The Electrochemical Society, 2006.

Karlowatz06c

G. Karlowatz, E. Ungersboeck, W. Wessner, H. Kosina, and S. Selberherr.
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In Meeting Abstracts: 210th Meeting of The Electrochemical Society, page 1449, 2006.

Karlowatz06d

G. Karlowatz, W. Wessner, and H. Kosina.
Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.
Mathmod Vienna Proceedings, vol. 5, no. 1, pages 4.1-4.6, 2006.

Karlowatz08

G. Karlowatz, W. Wessner, and H. Kosina.
Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation.
MATHCOM, vol. 79, no. 4, pages 972-979, 2008.

Sverdlov07a

V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, and S. Selberherr.
Two-band k p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility.
International Semiconductor Device Research Symposium, 2007.
ISBN: 978-1-4244-1892-3.

Sverdlov07b

V. Sverdlov, G. Karlowatz, H. Kosina, and S. Selberherr.
Two-band k p model for the conduction band in silicon.
Proceedings European Simulation and Modeling Conference, pages 220 - 224, 2007.
ISBN: 978-90-77381-36-6.

Sverdlov07c

V. Sverdlov, G. Karlowatz, E. Ungersboeck, and H. Kosina.
Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparapolicity Parameter.
In Simulation of Semiconductor Processes and Devices, volume 12, pages 329-332, Vienna, 2007.

Sverdlov08

V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, and S. Selberherr.
Two-band k p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility.
Solid-State Electron., vol. 52, pages 1563-1568, 2008.

Thalhammer03

R. Thalhammer, S. Braun, B. Devcic-Kuhar, G. Karlowatz, M. Gröschl, F. Trampler, E. Benes, H. Nowotny, and M. Koštal.
Viscosity Monitoring with a Quartz Crystal Resonator.
Journal of Electrical Engineering, vol. 54, no. 5-6, pages 140-143, 2003.

Ungersboeck06

E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina, and S. Selberherr.
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
In 11th International Workshop on Computational Electronics Book of Abstracts, pages 141-142, 2006.

Ungersboeck07a

E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina, and S. Selberherr.
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
Journal of Computational Electronics, vol. 6, no. 1-3, pages 55-58, 2007.

Ungersboeck07b

E. Ungersboeck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, and S. Selberherr.
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon.
IEEE Trans.Electron Devices, vol. 54, no. 9, pages 2183-2190, 2007.

Table 1: Publication statistics.

	Author	Co-Author	Total
Journals & Contributions to books	2	3	5
Conferences	3	10	13
Total	5	13	18