Publications in Conference Proceedings

1.

V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr: “Modeling of Spin-Based Silicon Technology”; Talk: International Conference on Ultimate Integration on Silicon (ULIS), Stockholm, Sweden; (invited) 2014–04–07 – 2014–04–09; in: “Proceedings of the 15th International Conference on Ultimate Integration on Silicon (ULIS)”, (2014), 4 pages.

2.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “High Performance MRAM-Based Stateful Logic”; Poster: International Conference on Ultimate Integration on Silicon (ULIS), Stockholm, Sweden; 2014–04–07 – 2014–04–09; in: “Proceedings of the 15th International Conference on Ultimate Integration on Silicon (ULIS)”, (2014), 4 pages.

3.

T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: “Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop”; Talk: International Conference on Ultimate Integration on Silicon (ULIS), Stockholm, Sweden; 2014–04–07 – 2014–04–09; in: “Proceedings of the 15th International Conference on Ultimate Integration on Silicon (ULIS)”, (2014), 4 pages.

4.

T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: “Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator”; Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013–11–04 – 2013–11–08; in: “Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)”, (2013), 456–457.

5.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates”; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013–09–03 – 2013–09–05; in: “Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)”, (2013), 163 – 166.

6.

T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: “Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip Flop”; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013–09–03 – 2013–09–05; in: “Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)”, (2013), 368 – 371.

7.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration”; Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013–09–02 – 2013–09–06; in: “Proceedings of the International Conference on Nanoscale Magnetism”, (2013), 208.

8.

T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: “Novel Non-Volatile Magnetic Flip Flop”; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 2013–07–29 – 2013–08–02; in: “Proceedings of Seventh International School on Spintronics and Quantum Information Technology”, (2013), 1 page.

9.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications”; Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 2013–07–17 – 2013–07–19; in: “Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)”, (2013), 1 page.

10.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications”; Talk: Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013–07–15 – 2013–07–17; in: “Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures”, (2013), 2 pages.

11.

T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: “Novel MTJ-Based Shift Register for Non-Volatile Logic Applications”; Talk: Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013–07–15 – 2013–07–17; in: “Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures”, (2013), 2 pages.

12.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “Design and Applications of Magnetic Tunnel Junction Based Logic Circuits”; Talk: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 2013–06–24 – 2013–06–27; in: “Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics”, (2013), 157 – 160.

13.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates”; Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013–06–04 – 2013–06–07; in: “Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)”, (2013), 244 - 245.

14.

V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr: “Modeling Spin-Based Devices in Silicon”; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 2013–06–04 – 2013–06–07; in: “Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)”, (2013), 70 – 71.

15.

H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: “Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates”; Poster: International Workshop ”Functional Nanomaterials and Devices”, Kyiv, Ukraine; 2013-04-08 – 2013-04-11; in: “Proceedings of the 7th International Workshop ”Functional Nanomaterials and Devices””, (2013), 68 – 69.

16.

H. Mahmoudi, V. Sverdlov, S. Selberherr: “MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems”; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 2012–09–17 – 2012–09–21; in: “Proceedings of the 42^th European Solid-State Device Research Conference (ESSDERC)”, (2012), 254 – 257.

17.

H. Mahmoudi, V. Sverdlov, S. Selberherr: “A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration”; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012–09–05 – 2012–09–07; in: “Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices”, (2012), 225 - 228.

18.

H. Mahmoudi, V. Sverdlov, S. Selberherr: “Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque”; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012–08–05 – 2012–08–08; in: “Book of Abstracts”, (2012), P–6.

19.

H. Mahmoudi, V. Sverdlov, S. Selberherr: “Novel Memristive Charge- and Flux-Based Sensors”; Talk: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 2012–06–12 – 2012–06–15; in: “Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics”, (2012), 4 pages.

20.

H. Mahmoudi, V. Sverdlov, S. Selberherr: “State Drift Optimization of Memristive Stateful IMP Logic Gates”; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012–05–22 – 2012–05–25; in: “Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)”, (2012), 243 – 244.

21.

H. Mahmoudi, V. Sverdlov, S. Selberherr: “Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements”; Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 2012–04–29 – 2012–05–04; in: “Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)”, (2012), 1 page.

22.

H. Mahmoudi, V. Sverdlov, S. Selberherr: “Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing”; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011–12–07 – 2011–12–09; in: “Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)”, (2011), 2 pages.