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4.3.4 Calculation of the Mechanical Stress

The discretization of the mechanical problem presented in Section 4.2.4 yields the linear system of equations

$\displaystyle \mathbf{K}\mathbf{d} = \mathbf{f_{in}},$ (4.96)

with

$\displaystyle \mathbf{K} = \int_{T} \mathbf{B}^T\mathbf{C}\mathbf{B}\ d\symDomain,$ (4.97)

$\displaystyle \mathbf{f_{in}} = \int_{T} \mathbf{B}^T\mathbf{C}\boldsymbol\symStrain_{0}\ d\symDomain,$ (4.98)

Since $ \mathbf{B}$, $ \mathbf{C}$, and $ \boldsymbol\symStrain_{0}$ are constant within an element, the assembly of (4.96) is performed in FEDOS using

$\displaystyle \mathbf{K} = \mathbf{B}^T\mathbf{C}\mathbf{B},$ (4.99)

and

$\displaystyle \mathbf{f_{in}} = \mathbf{B}^T\mathbf{C}\boldsymbol\symStrain_{0}.$ (4.100)

The mechanical problem has to be solved each time step after the solution of the vacancy dynamics problem, as shown in Figure 4.3. Thus, for the time step $ n$, the internal force vector is determined by the electromigration induced strain given in (3.82), so that

$\displaystyle \boldsymbol\symStrain_{0} = \frac{1}{3}\symStrain^{v,n}\mathbf{I}.$ (4.101)

From (3.78), the trace of the electromigration strain for each node of the tetrahedron is calculated by

$\displaystyle \symStrain_i^{v,n} = \symStrain_i^{v,n-1} -\symAtomVol(1-\symVacR...
...ht) + \symAtomVol\left(C_{im,i}^{n} - C_{im,i}^{n-1}\right),\qquad i=1,\dots,4,$ (4.102)

resulting in the element strain which is set in (4.101),

$\displaystyle \symStrain^{v,n} = \sum_{i=1}^{4}\symStrain_i^{v,n}.$ (4.103)

The solution of (4.96) yields the interconnect line deformation due to electromigration. Once the displacement field $ \mathbf{d}$ is determined, the electromigration induced stress vector for an element is obtained using (4.60),

$\displaystyle \boldsymbol\symHydStress = \mathbf{C}\mathbf{B}\mathbf{d} - \mathbf{C}\boldsymbol\symStrain_{0}.$ (4.104)

The mechanical stress at each node is obtained by an extrapolation from the stress calculated for the elements, given by (4.104). The stress at a particular node is calculated by performing a weighted average of the stress on all elements connected to the node. Considering a node $ p \in T_h(\symDomain)$ and defining the set of all elements which contain the node as $ T(p)$, the mechanical stress at the node $ p$ is given by

$\displaystyle \boldsymbol\symHydStress_p = \frac{1}{\displaystyle\sum_{T\in T(p)} V_T}\ \sum_{T\in T(p)} V_T \boldsymbol\symHydStress_T,$ (4.105)

where $ V_T$ is the volume, and $ \boldsymbol\symHydStress_T$ is the stress calculated by (4.104) for the element $ \T$.


next up previous contents
Next: 4.3.5 Mesh Refinement at Up: 4.3 Simulation in FEDOS Previous: 4.3.3 Assembly of the

R. L. de Orio: Electromigration Modeling and Simulation