[1]   A. Makarov, D. Osintsev, V. Sverdlov, and S. Selberherr. Modeling Spin-Based Electronic Devices. In Book of Abstracts, 2014. invited; talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; 2014-03-10 – 2014-03-14.

[2]   D. Osintsev, V. Sverdlov, N. Neophytou, and S. Selberherr. Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures. In Proceedings of International Winterschool on New Developments in Solid State Physics, pages 88–89, 2014. poster presentation: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2014-02-23 – 2014-02-28.

[3]   D. Osintsev, V. Sverdlov, and S. Selberherr. Acoustic phonon and surface roughness spin relaxation mechanisms in strained ultra-scaled silicon films. Advanced Materials Research - Print/CD, 854:29–34, 2014.

[4]   D. Osintsev, V. Sverdlov, and S. Selberherr. Increasing mobility and spin lifetime with shear strain in thin silicon films. In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, pages 1–2, 2014. talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 – 2014-01-29.

[5]   D. Osintsev, V. Sverdlov, and S. Selberherr. Mobility and spin lifetime enhancement in thin silicon films by shear strain. In Bulletin of the American Physical Society (APS March Meeting), 59/1, 2014. talk: APS March Meeting, Denver, USA; 2014-03-03 – 2014-03-07.

[6]   V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, and S. Selberherr. Modeling of Spin-Based Silicon Technology. In Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS), 2014. invited; talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 – 2014-04-09.

[7]   V. Sverdlov, D. Osintsev, and S. Selberherr. From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach. In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, 2014. invited; talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 – 2014-01-29.

[8]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer. In Abstracts Book of The 21st International Conference on Soft Magnetic Materials, page 101, 2013. poster presentation: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 – 2013-09-04.

[9]   D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, and S. Selberherr. Subband Spitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs. Solid-State Electronics, 90:34–38, 2013.

[10]   D. Osintsev, A. Makarov, V. Sverdlov, and S. Selberherr. Using Strain to Increase the Reliability of Scaled Spin MOSFETs. In Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits, pages 770–773, 2013. poster presentation: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 – 2013-07-19.

[11]   D. Osintsev, V. Sverdlov, A. Makarov, and S. Selberherr. Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors. Sains Malaysiana, 42(2):205–211, 2013.

[12]   D. Osintsev, V. Sverdlov, and S. Selberherr. Calculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films. In Proceedings of the 21st International Symposium Nanostructures, pages 69–70, 2013. poster presentation: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 – 2013-06-28.

[13]   D. Osintsev, V. Sverdlov, and S. Selberherr. Enhanced intervalley splitting and reduced spin relaxation in strained thin silicon films. In Bulletin American Physical Society (APS March Meeting), 2013. talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 – 2013-03-22.

[14]   D. Osintsev, V. Sverdlov, and S. Selberherr. Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs. In Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 236–239, 2013. poster presentation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 – 2013-09-05.

[15]   D. Osintsev, V. Sverdlov, and S. Selberherr. Influence of Surface Roughness Scattering on Spin Lifetime in Silicon. In Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013), pages 76–77, 2013. talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 – 2013-06-07.

[16]   D. Osintsev, V. Sverdlov, and S. Selberherr. Influence of the valley degeneracy on spin relaxation in thin silicon films. In The 14th Edition of the ‘International Conference on Ultimate Integration on Silicon’ (ULIS 2013), pages 221–224, 2013. poster presentation: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 – 2013-03-21.

[17]   D. Osintsev, V. Sverdlov, and S. Selberherr. Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films. In Proceedings of the 43rd European Solid-State Device Research Conference (ESSDERC), pages 334–337, 2013. talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 2013-09-16 – 2013-09-20.

[18]   D. Osintsev, V. Sverdlov, and S. Selberherr. Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach. In Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, 46, 2013. talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 – 2013-01-23.

[19]   D. Osintsev, V. Sverdlov, and S. Selberherr. Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs. In Proceedings of the 7th International Workshop ”Functional Nanomaterials and Devices”, pages 64–65, 2013. talk: International Workshop ”Functional Nanomaterials and Devices”, Kyiv, Ukraine; 2013-04-08 – 2013-04-11.

[20]   D. Osintsev, V. Sverdlov, and S. Selberherr. Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films. In Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5, pages 203–208. ECS Transactions, 2013.

[21]   D. Osintsev, V. Sverdlov, and S. Selberherr. Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films. In 223^th ECS Meeting, page 1, 894, 2013. talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 – 2013-05-16.

[22]   D. Osintsev, V. Sverdlov, and S. Selberherr. Spin Lifetime Enhancement in Strained Thin Silicon Films. In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013), 2013. talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 – 2013-12-13.

[23]   V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, and S. Selberherr. Modeling Spin-Based Devices in Silicon. In Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013), pages 70–71, 2013. invited; talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 – 2013-06-07.

[24]   S. Tyaginov, M. Bina, J. Franco, D. Osintsev, and Y. Wimmer. Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs. In 2013 IEEE International Integrated Reliability Workshop Final Report, pages 98–101, 2013. talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 – 2013-10-17.

[25]   S. Tyaginov, D. Osintsev, Y. Illarionov, J. Park, H. Enichlmair, M. Vexler, and K.-T. Grasser. Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration. In Abstracts of XI Russian Conference on Semiconductor Physics, page 441, 2013. poster presentation: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 – 2013-09-20.

[26]   T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, and S. Selberherr. Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate. Microelectronic Engineering, 112:188–192, 2013.

[27]   T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, and S. Selberherr. Switching Optimization of an Electrically Readand Writable Magnetic Logic Gate. In Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013), pages 238–239, 2013. talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 – 2013-06-07.

[28]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling. IEEE Transactions on Magnetics, 48(4):1289–1292, 2012.

[29]   D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, and S. Selberherr. Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors. In Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices, pages 153–156, 2012. talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 – 2012-09-07.

[30]   D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, and S. Selberherr. Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors. In Proceedings of the 24th European Modeling and Simulation Symposium, pages 156–162, 2012. talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 2012-09-19 – 2012-09-21.

[31]   D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, and S. Selberherr. Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain. In Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012), pages 229–230, 2012. poster presentation: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 – 2012-05-25.

[32]   D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, and S. Selberherr. Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs. In The 15th International Workshop on Computational Electronics, pages 1–4. IEEE Xplore, 2012.

[33]   D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, and S. Selberherr. Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells. In Book of Abstracts, pages P–27, 2012. poster presentation: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 – 2012-08-08.

[34]   D. Osintsev, A. Makarov, V. Sverdlov, and S. Selberherr. Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. In I. Lirkov, S. Margenov, and J. Wasniewski, editors, Lecture Notes in Computer Science, Vol. 7116, pages 630–637. Springer, 2012.

[35]   D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, and S. Selberherr. Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs. In 31st International Conference on the Physics of Semiconductors (ICPS 2012), 2012. poster presentation: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 – 2012-08-03.

[36]   D. Osintsev, V. Sverdlov, A. Makarov, and S. Selberherr. Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs. In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), page B3, 2012. talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 – 2012-07-25.

[37]   D. Osintsev, V. Sverdlov, and S. Selberherr. Modeling Spintronic Effects in Silicon. In Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH), 2012. invited; talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; 2012-09-24 – 2012-09-28.

[38]   D. Osintsev, V. Sverdlov, and S. Selberherr. Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films. In Abstracts Workshop on Innovative Devices and Systems (WINDS), page 33, 2012. invited; talk: Workshop on Innovative Devices and Systems (WINDS), Kona; 2012-12-02 – 2012-12-07.

[39]   D. Osintsev, V. Sverdlov, and S. Selberherr. Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body. In Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits, pages 77–78, 2012. poster presentation: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 – 2012-01-25.

[40]   D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, and S. Selberherr. Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels. Solid-State Electronics, 71:25–29, 2012.

[41]   T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, and S. Selberherr. Fully Electrically Read- Write Magneto Logic Gates. In Book of Abstracts, 2012. talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 – 2012-10-10.

[42]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer. In Abstracts Book of The 20th International Conference on Soft Magnetic Materials, page 444, 2011. poster presentation: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 – 2011-09-22.

[43]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer. In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials, 2011. poster presentation: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 – 2011-09-30.

[44]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer. In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, 2011. talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 – 2011-07-22.

[45]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions. In Proceedings of International School and Conference on Spintronics and Quantum Information Technology, page 238, 2011. poster presentation: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 – 2011-08-05.

[46]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching. In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011), 2011. talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 – 2011-12-09.

[47]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer. Physica Status Solidi - Rapid Research Letters, 5(12):420–422, 2011.

[48]   A. Makarov, V. Sverdlov, D. Osintsev, and S. Selberherr. Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011), 2011. poster presentation: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 – 2011-12-09.

[49]   A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, and S. Selberherr. Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations. In Proceedings of the 25th European Simulation and Modelling Conference, pages 177–181, 2011. talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 – 2011-10-26.

[50]   D. Osintsev, A. Makarov, S. Selberherr, and V. Sverdlov. An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation. In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN 2011), 2011. talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 – 2011-12-09.

[51]   D. Osintsev, A. Makarov, V. Sverdlov, and S. Selberherr. Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins. In Abstracts Intl. Conf. on Large-Scale Scientific Computations, page 64, 2011. talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 – 2011-06-10.

[52]   D. Osintsev, V. Sverdlov, A. Makarov, and S. Selberherr. Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs. In Proceedings of International School and Conference on Spintronics and Quantum Information Technology, page 229, 2011. poster presentation: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 – 2011-08-05.

[53]   D. Osintsev, V. Sverdlov, A. Makarov, and S. Selberherr. Ballistic Transport in Spin Field-Effect Transistors Built on Silicon. In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, 2011. talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 – 2011-07-22.

[54]   D. Osintsev, V. Sverdlov, A. Makarov, and S. Selberherr. Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins. In ECS Transactions, pages 155–162, 2011. talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 – 2011-09-02.

[55]   D. Osintsev, V. Sverdlov, A. Makarov, and S. Selberherr. Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011), 2011. talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 – 2011-12-09.

[56]   D. Osintsev, V. Sverdlov, A. Makarov, and S. Selberherr. Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors. In Proceedings of the 16th International Conference on Simulation of Semiconductor Processes and Devices, pages 59–62, 2011. talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 – 2011-09-10.

[57]   D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, and S. Selberherr. Ballistic Spin Field-Effect Transistors Built on Silicon Fins. In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits, pages 59–60, 2011. poster presentation: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 – 2011-01-19.

[58]   D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, and S. Selberherr. Transport Properties of Spin Field-Effect Transistors Built on Si and InAs. In Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS), pages 210–213. IEEE, 2011. talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 – 2011-03-16.

[59]   D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, and S. Selberherr. Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors. In 219^th ECS Meeting, pages 277–282, Vol.35, No.5, 2011. talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 – 2011-05-06.

[60]   D. Osintsev, V. Sverdlov, Z. Stanojevic, and S. Selberherr. Ballistic Spin Field Effect Transistor Based on Silicon Nanowires. In Bulletin American Physical Society (APS March Meeting 2011), 2011. talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 – 2011-03-25.