A large number of published theoretical and experimental reports have been
reviewed to include the physical parameters for the ,
from chemical group IV, and
,
,
,
, or
, which are III-V
chemical group binary compounds. All these materials are named basic materials later in
this work. The combination between two III-V binary materials results in a
ternary or a quaternary material.
SiGe as a combination of Si and Ge, together with the ternary III-V materials
as a combination of the respective binary materials are named alloy materials later in
this work. An attempt has been made to allow the user choose arbitrary mole
fractions for the alloy materials, although the majority of the simulations performed
in this work include III-V compounds lattice-matched to GaAs substrate. This
not only gives the designer a good degree of freedom as to the choice of
material, but also allows a direct comparison between various devices such as
AlGaAs/GaAs, InGaP/GaAs, InP/InGaAs, InAlAs/InGaAs, and SiGe/Si HBTs,
AlGaAs/InGaAs/GaAs and InAlAs/InGaAs HEMTs, or SiGe/Si MOSFETs. However, due
to the very limited experimental data on some compound materials such as InGaP,
InAlAs, InAsP, and GaAsP, one has to consider interpolation schemes as the only
available option to model the variation of some parameters in a continuous
range of mole fraction. In these cases, variations of interpolation schemes are
studied to find the best fit to the sometimes limited reported data in the
literature.