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Dissertation Palankovski
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Acknowledgment
Contents
Abstract
Kurzfassung
Acknowledgment
List of Figures
List of Tables
List of Symbols
List of Acronyms
1. Introduction
2. Status of Research
2.1 State-of-the-art Heterostructure Devices
2.1.1 Why and Where SiGe HBTs?
2.1.2 Why and Where III-V HBTs?
2.1.3 Future
2.2 State-of-the-art Device Simulation
2.2.1 Device Simulators
2.2.2
MINIMOS-NT
2.3 Semiconductor Materials
2.3.1 Semiconductor Materials in
MINIMOS-NT
2.3.2 Modeling Concept
2.3.3 Interpolation Schemes
2.3.4 The Effect of Strain
3. Physical Models
3.1 Sets of Partial Differential Equations
3.1.1 The Basic Semiconductor Equations
3.1.2 The Drift-Diffusion Transport Model
3.1.3 The Hydrodynamic Transport Model
3.1.4 The Lattice Heat Flow Equation
3.1.5 The Insulator Equations
3.1.6 Boundary Conditions
3.2 Lattice and Thermal Properties
3.2.1 Permittivity
3.2.2 Mass Density
3.2.3 Thermal Conductivity
3.2.4 Specific heat
3.3 Band-Structure
3.3.1 Bandgap Energy
3.3.2 Bandgap Offsets
3.3.3 Bandgap Narrowing
3.3.4 Effective Carrier Mass
3.3.5 Effective Density of States
3.4 Carrier Mobility
3.4.1 Lattice Mobility
3.4.2 Ionized Impurity Scattering
3.4.3 Surface scattering
3.4.4 High-Field Mobility for DD Equations
3.4.5 High-Field Mobility for HD Equations
3.5 Velocity Saturation
3.6 Energy Relaxation Time
3.6.1 Methodology
3.6.2 The Relaxation Time Model
3.7 Generation and Recombination
3.7.1
Shockley-Read-Hall
and Surface Recombination
3.7.2
Auger
Recombination
3.7.3 Direct Recombination
3.7.4 Band-to-Band Tunneling
3.7.5 Impact Ionization
4. Simulation Application
4.1 GaAs versus SiGe HBTs
4.1.1 The Test Device
4.1.2 The Realistic Device
4.1.3 The Real Device
4.2 High Power GaAs HBTs
4.2.1 Fabrication of the Simulated Devices
4.2.2 Simulation Results
4.3 S-Parameter Simulation
4.3.1 Simulation Approach
4.3.2 Simulation Results
4.4 Analysis of HBT Behavior After Electrothermal Stress
4.4.1 Importance of the InGaP Ledge
4.4.2 Device Reliability
4.4.3 Effectiveness of Silicon Nitride Passivation
4.5 Simulation of Polysilicon Emitter Bipolar Transistors
4.5.1 Device Fabrication
4.5.2 Process Simulation
4.5.3 Device Simulation Results and Comparison with Measurements
5. Conclusion and Outlook
5.1 Conclusion
5.2 Future Directions
Bibliography
List of Publications
Curriculum Vitae
Vassil Palankovski
2001-02-28
