3.7.4 Band-to-Band Tunneling

The direct band-to-band tunneling model (BB) describes the carrier generation in the high field region without any influence of local traps. The BB tunneling process describes the field emission of valence electrons leaving back holes. In case the magnitude of the electric field increases the trap assisted band to band tunneling process is replaced by the BB process. Two models are used in MINIMOS-NT. The Schenk model [187] is a complex physically-based model applicable to Si. Another simpler model [189] is applicable to all materials.