4.2 High Power GaAs HBTs

In this section the results of two-dimensional hydrodynamic simulations of one-finger high power Heterojunction Bipolar Transistors (HBTs) on GaAs substrate are demonstrated. An overview of the physical models used and comparisons with experimental data are presented.

In particular the electrical behavior of AlGaAs/GaAs and AlGaAs/InGaP/GaAs one-finger high power HBTs with emitter areas of 90 $\mu$m$^2$ are studied at several ambient temperatures. Typical values for the devices under consideration range from 300 K up to 380 K [198].