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4.3 SJ Lateral Trench Gate SOI-LDMOSFETs

Recently the super-junction concept was suggested to improve the trade-off between and BV of vertical DMOSFETs. In this section we suggest and study SOI-LDMOSFETs which have a SJ structure together with a lateral trench gate. Furthermore, we propose the unbalanced structure which has a larger -column width than that of the -column.

• 4.3.1 Introduction
• 4.3.2 Device Structures and Operations
• 4.3.3 Simulation Results

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 Previous: 4.2.3.2 On-State Characteristics   Up: 4. Case Study   Next: 4.3.1 Introduction