4.3 SJ Lateral Trench Gate SOI-LDMOSFETs

Recently the super-junction concept was suggested to improve the trade-off between $R_\mathrm{sp}$ and BV of vertical DMOSFETs. In this section we suggest and study SOI-LDMOSFETs which have a SJ structure together with a lateral trench gate. Furthermore, we propose the unbalanced structure which has a larger $n$-column width than that of the $p$-column.