We discussed the BV and temperature dependence of partial-SOI
(P-SOI) LDMOSFETs in terms of different locations of the silicon window. Our
simulations confirmed that the BV and self-heating effect of the
P-SOI with the silicon window under the source is better than those of P-SOI
with the silicon window under the drain. For the P-SOI LDMOSFET (
7
m and
2
m) with the silicon window under the drain, a
maximum BV of 355V is obtained at
6
and
25
m. For the P-SOI LDMOSFET with the
silicon window under the source, a maximum BV of 397V is
obtained at
3
and
30
m.
The improvement in the voltage handling capability was about 32% compared to
conventional 300V SOI LDMOSFET. Since the voltage drops in the buried oxide
and in the depletion layer of the substrate region, a higher BV
is obtained in this structure compared to that of a P-SOI LDMOSFET with a silicon window
under the drain.
A lateral trench gate LDMOSFET on SOI was proposed.
This allows obtaining an increased channel area of the device.
The channel current flows on the side wall of the lateral trench
gate can be seen clearly in the three-dimensional simulation results.
A lower specific on-resistance is obtained in the suggested
structure compared to that of a conventional SOI-LDMOSFET.
With a lateral trench gate our three-dimensional simulations
confirm that it is possible to get the best trade-off between
the BV and
of the LDMOSFET on SOI.
The specific on-resistance strongly depends on the trench depth.
It decreases with increasing the trench depth. The space
between the trenches weakly affects the on-resistance.
Simulations are performed for the 100V lateral trench gate SOI-LDMOSFETs
with an
-drift length
5.5
m and a doping
1.0
. With a lateral trench
depth of 1.5
m a lower
of 264m
mm
is
obtained. This is about 8.3% smaller than the corresponding
value of the conventional SOI-LDMOSFET.
A lateral trench gate SJ SOI-LDMOSFET transistor was proposed.
A lower specific on-resistance is obtained in the suggested structure.
Our simulations confirm that the
of the lateral trench gate
SJ SOI-LDMOSFETs is about 60% lower
than that of conventional SOI-LDMOSFETs. This value is lower than
that of a SJ SOI-LDMOSFET which has a much higher
-column
doping of 9.9
.
Unlike the standard vertical SJ devices, the optimum
-column doping of the
SJ SOI-LDMOSFETs is lower than that of the
-column.
For the SJ SOI-LDMOSFET with an
-column doping
of
9.9
, a maximum BV of 124V is
obtained at
6.5
.
With
of 6.0
, a maximum BV of 127V is
obtained at
2.5
.
Similar results are obtained for the lateral trench gate SJ SOI-LDMOSFET.
Together with the larger width of the
-column than
that of the
-column in the drift region it is possible to lower
the doping of the
-column without degrading the on-resistance.
As a result the sensitivity of the BV to the charge imbalance is reduced
compared to that of the standard SJ SOI-LDMOSFET.
A high-voltage SJ SOI-LDMOSFET with a trench oxide in the
drift region was proposed. A lower
is obtained in the proposed device.
The
of the proposed device which has a drift length
13.0
m,
a
-column doping
4.0
and a
-column width
0.3
m is 25.4m
. Even
is reduced to 13.0
m,
the BV is the same as that of the conventional SOI-LDMOSFET with
20.0
m.
Our simulations confirm that the
of the proposed device
is about 76% and the
-drift length is about 65% of that of conventional
SOI-LDMOSFETs, respectively. With this new device concept it is possible to reduce the
device size and
without degrading the BV.
We proposed a SOI SA-LIGBT which has a trench oxide at the drain/anode region.
The -drain and
-anode of the proposed device are separated
by the trench oxide, which results in a higher pinchoff resistance under
the
-anode. With this structure it is possible to suppress the NDR
effectively without increasing the
-anode length. The snap-back voltage
inherently present in the SA-LIGBT is about 20% lower
than that of a conventional SA-LIGBT.
Additionally, significant improvements in the turn-off time can be achieved
by the shorted-anode structure.
Jong-Mun Park 2004-10-28