5.2 Conclusions

From our proposed devices and related studies, we can conclude that the trade-off between BV and $R_\mathrm{sp}$ is significantly improved for power semiconductor devices which have novel device concepts, such as SJ and lateral trench gate. Two- and three-dimensional device simulations allow to see the electrical characteristics and physical phenomena of these complex device structures. New lateral power semiconductor structures, such as P-SOI structures, SJ SOI-LDMOSFETs, and lateral trench gate structures as proposed, overcome the device limitations of conventional power devices. A successfully study of the physical and electrical phenomena of novel device concepts is possible today.

In future research process conditions suitable for new device concepts should be developed. Because of the complicated device structures only a few concepts can be used in practical applications at this moment. In addition, further improvement of TCAD is important to study complicated and large size power devices, especially in three-dimensional applications.