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5.2.3 Results

Figure 5.11 shows the analytical acceptor and donor doping profile of the optimized transistor with the source and drain regions and the channel implant. In Figure 5.12 a vertical cut through the channel region of the device is shown.

Figure 5.11: Two dimensional analytical acceptor and donor doping profile of the optimized NMOS transistor.
\includegraphics[width=0.8\linewidth,angle=90]{graphics/appb_concentration_i.ps}

Figure 5.12: Analytical acceptor and donor doping profiles of the optimized NMOS transistor.
\includegraphics[width=1.\linewidth]{graphics/appb_doping1d.eps}

The on-current of the optimized transistor ( $I_{on} = 2.98 \cdot 10^{-4} \ {\rm A}$) was increased by 20 % compared to a uniformly doped device ( $I_{on} = 2.49 \cdot 10^{-4} \ {\rm A}$) with the same off-current Ioff.

It took about 284 evaluations of the simulation flow including the finite differences for the gradient calculations.



R. Plasun