TCAD environments support the user of process and device simulators to access programs, input and output data. Additional optimization capabilities open new fields in the utilization of TCAD simulators.
The optimization capabilities of the SIESTA simulation environment are successfully used for several other microelectronic applications, like for studying sub-micron MOSFETs with single doping peaks in the channel region [O9,54]. The device performance of HBTs is studied in [38] and transistors with assymetric doping profiles are analyzed in [53]. This shows that the optimization module in the SIESTA framework builds an efficient and stable environment for a large variety of TCAD applications.