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Bibliography

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The Viennese Integrated System for Technology CAD Applications.
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21
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The Viennese Integrated System for Technology CAD Applications-Architecture and Critical Software Components.
Dissertation, Technische Universität Wien, 1994.

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27
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Two-Dimensional Dopant Profiling of Submicron MOSFET's Using Nonlinear Least Squares Inverse Modeling.
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49
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50
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52
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Three Dimensional Monte Carlo Simulation of Ion Implantation with Octree Based Point Location.
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53
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Closed-Loop MOSFET Doping Profile Optimization for Portable Systems.
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54
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Drive Performance of an Asymmetric MOSFET Structure: The Peak Device.
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55
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Parallel and Distributed TCAD Simulations using Dynamic Load Balancing.
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Rigorous TCAD Investigations on Semiconductor Fabrication.
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