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Linear Programming Frequently Asked Questions, 1999.
USENET: sci.op-research;
ftp://rtfm.mit.edu/pub/usenet/sci.answers/linear-programming-faq;
http://www-unix.mcs.anl.gov/otc/Guide/faq/linear-programming-faq.html.
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BETZ, D.M.
XLISP: An Object-Oriented Lisp, Version 2.1.
Apple, Peterborough, New Hampshire, USA, 1989.
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BINDER, T., DRAGOSITS, K., GRASSER, T., KLIMA, R., KNAIPP, M., KOSINA, H.,
MLEKUS, R., PALANKOVSKI, V., ROTTINGER, M., SCHROM, G., SELBERHERR, S., AND
STOCKINGER, M.
MINIMOS-NT User's Guide.
Institut für Mikroelektronik, 1998.
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BONING, D.S., AND MOZUMDER, P.K.
DOE/Opt: A System for Design of Experiments, Response Surface
Modeling, and Optimization Using Process and Device Simulation.
IEEE Trans.Semiconductor Manufacturing 7, 2 (1994), 233-244.
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BOOTH, R., DUPAS, L., AND CARTUYVELS, R.
NORMAN User's Manual.
IMEC, Feb. 1993.
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BOX, G.E.P., AND DRAPER, N.R.
Empirical Model-Building and Response Surfaces.
Wiley, 1987.
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BRONSTEIN, I.N., AND SEMENDJAJEW, K.A.
Taschenbuch der Mathematik.
Teubner, 1983.
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CARTUYVELS, R., BOOTH, R., KUBICEK, S., DUPAS, L., AND DE MEYER, K.M.
A Powerful TCAD System Including Advanced RSM Techniques for
Various Engineering Optimization Problems.
In Proc: Simulation of Semiconductor Devices and Processes
(Wien, 1993), S. Selberherr, H. Stippel, and E. Strasser, Eds., vol. 5,
Springer, pp. 29-32.
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CARTUYVELS, R., AND DUPAS, L.
DEBORA User's Manual.
IMEC, May 1993.
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DAS, A., NEWMARK, D., CLEJAN, I., FOISY, M., SHARMA, M., VENKATESAN, S.,
VEERARAGHAVAN, S., MISRA, V., GADEPALLY, B., AND PARRILLO, L.
An Advanced MOSFET Design Approach and a Calibration Methodology
using Inverse Modeling that Accurately predicts Device Characteristics.
In Proc: Int.Electron Devices Meeting (1997), pp. 687-690.
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DE MEYER, K.M., CARTUYVELS, R., AND DUPAS, L.
A Simulation Strategy for Process Optimization.
In: VPAD'93 [65], pp. 80-83.
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DIRSCHMID, H.J.
Mathematische Grundlagen der Elektrotechnik.
Vieweg, 1986.
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DUVALL, S.G.
An Interchange Format for Process and Device Simulation.
IEEE Trans.Computer-Aided Design 7, 7 (1988), 741-754.
- 14
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ELLIS, M.A., AND STROUSTRUP, B.
The Annotated C++ Reference Manual.
Addison-Wesley, 1994.
- 15
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FASCHING, F., FISCHER, C., SELBERHERR, S., STIPPEL, H., TUPPA, W., AND
READ, H.
A PIF Implementation for TCAD Purposes.
In Proc: Simulation of Semiconductor Devices and Processes
(Konstanz, 1991), W. Fichtner and D. Aemmer, Eds., vol. 4, Hartung-Gorre,
pp. 477-482.
- 16
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FASCHING, F., HALAMA, S., AND SELBERHERR, S., Eds.
Technology CAD Systems (Wien, 1993), Springer.
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FOURER, R.
Nonlinear Programming Frequently Asked Questions, 1999.
USENET: sci.op-research;
ftp://rtfm.mit.edu/pub/usenet/sci.answers/nonlinear-programming-faq;
http://www-unix.mcs.anl.gov/otc/Guide/faq/nonlinear-programming-faq.html.
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GASTON, G.J., AND WALTON, A.J.
The Integration of Simulation and Response Surface Methodology for
the Optimization of IC Processes.
IEEE Trans.Semiconductor Manufacturing 7, 1 (1994), 22-33.
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GILL, P.E., MURRAY, W., AND WRIGHT, M.H.
Practical Optimization.
Academic Press, 1995.
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HALAMA, S., FASCHING, F., FISCHER, C., KOSINA, H., LEITNER, E., PICHLER,
CH., PIMINGSTORFER, H., PUCHNER, H., RIEGER, G., SCHROM, G., SIMLINGER, T.,
STIFTINGER, M., STIPPEL, H., STRASSER, E., TUPPA, W., WIMMER, K., AND
SELBERHERR, S.
The Viennese Integrated System for Technology CAD Applications.
In: Fasching et al. [16], pp. 197-236.
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HALAMA, S.
The Viennese Integrated System for Technology CAD
Applications-Architecture and Critical Software Components.
Dissertation, Technische Universität Wien, 1994.
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HAMMERSLEY, J.M., AND HANDSCOMB, D.C.
Monte Carlo Methods.
Chapman & Hall, London, 1983.
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HEITKÖTTER, J., AND BEASLEY, D.
The Hitch-Hiker's Guide to Evolutionary Computation: A list of
Frequently Asked Questions (FAQ), 1999.
USENET: comp.ai.genetic;
ftp://rtfm.mit.edu/pub/usenet/news.answers/ai-faq/genetic/.
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HELLER, D., AND FERGUSON, P.M.
Motif Programming Manual, vol. Six A.
O'Reilly & Associates, Sebastopol, CA, 1994.
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INSTITUT FÜR MIKROELEKTRONIK.
VISTA Documentation 1.3-1, VLISP Manual.
Technische Universität Wien, Austria, Jan. 1996.
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KHALIL, N., FARICELLI, J., BELL, D., AND SELBERHERR, S.
The Extraction of Two-Dimensional MOS Transistor Doping via Inverse
Modeling.
IEEE Electron Device Lett. 16, 1 (1995), 17-19.
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KHALIL, N., FARICELLI, J., HUANG, C.L., AND SELBERHERR, S.
Two-Dimensional Dopant Profiling of Submicron MOSFET's Using
Nonlinear Least Squares Inverse Modeling.
In Proc: 3rd Int. Workshop on Measurement and Characterization
of Ultra-Shallow Doping Profiles in Semiconductors (Mar. 1995),
J. Ehrstein, R. Mathur, and G. McGuire, Eds., pp. 6.1-6.9.
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LEE, Z.K., MCILRATH, M.B., AND ANTONIADIS, D.A.
Inverse Modeling of MOSFETs using I-V Characteristics in the
Subthreshold Region.
In Proc: Int.Electron Devices Meeting (1997), pp. 683-686.
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LORENZEN, T.J., AND ANDERSON, V.L.
Design of Experiments.
Marcel Dekker, 1991.
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MARQUARDT, D. W.
An algorithm for the estimation of nonlinear parameters.
Soc. Ind. Appl. Maths. J. 11 (1963), 431-441.
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MASSOBRIO, G., AND ANTOGNETTI, P.
Semiconductor Device Modeling with Spice, second ed.
McGraw-Hill, 1993.
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MEYER, K. DE, AND BIESEMANS, S., Eds.
Simulation of Semiconductor Processes and Devices (Leuven,
Belgium, 1998), Springer.
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MLEKUS, R.
Object-Oriented Algorithm and Model Management in TCAD
Applications.
Dissertation, Technische Universität Wien, 1999.
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MORÉ, J. J., GARBOW, B. S., AND HILLSTROM, K. E.
Users Guide for MINPACK-1, 1980.
Argonne National Laboratory Report ANL-80-74, Argone, IL.
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MORÉ, J. J., AND SORENSEN, D. C.
Computing a trust region step.
SIAM J. Sci. Stat. Comput. 4 (1983), 553-572.
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MORÉ, J. J., SORENSEN, D. C., HILLSTROM, K. E., AND GARBOW, B. S.
The MINPACK Project,.
Sources and Development of Mathematical Software. Predtice-Hall,
Englewood Clifs, NJ, 1984.
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MOR´E, J.J., AND WRIGHT, S.J.
Optimization Software Guide, vol. 14 of Frontiers in
Applied Mathematics.
SIAM, Philadelphia, 1993.
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PALANKOVSKI, V., KNAIPP, M., AND SELBERHERR, S.
Influence of the Material Composition and Doping Profiles on HBTs
Device Performance.
In Proc: IASTED Int. Conf. on Modelling and Simulation
(Pittsburgh, Pennsylvania, USA, May 1998), pp. 7-10.
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PAUL, R.
MOS-Feldeffekttransistoren.
Springer, Berlin, 1994.
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PICHLER, CH.
Integrated Semiconductor Technology Analysis.
Dissertation, Technische Universität Wien, Mar. 1997.
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PLACKETT, R. L., AND BURMAN, J. P.
The design of optimum multifactorial experiments.
Biometrika 33 (1946), 305-325.
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PRESS, W.H., TEUKOLSKY, S.A., VETTERLING, W.T., AND FLANNERY, B.P.
Numerical Recipes in C.
Cambridge University Press, 1992.
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SACHS, L.
Angewandte Statistik, vol. 7. Auflage.
Springer, 1992.
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SATO, H., TSUNENO, K., AOYAMA, K., NAKAMURA, T., KUNITOMO, H., AND MASUDA,
H.
A New Hierarchical RSM for TCAD-based Device Design to Predict CMOS
Development.
In Proc: Proc. IEEE 1995 Int. Conf. on Microelectronic Test
Structures (Mar. 1995), vol. 8, pp. 299-302.
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SEMICONDUCTOR INDUSTRY ASSOCIATION.
The National Technology Roadmap for Semiconductors, 1997.
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SHEWCHUK, JONATHAN RICHARD.
Triangle: Engineering a 2D Quality Mesh Generator and
Delaunay Triangulator.
In: Applied Computational Geometry: Towards Geometric
Engineering, M. C. Lin and D. Manocha, Eds., vol. 1148 of Lecture Notes
in Computer Science. Springer-Verlag, May 1996, pp. 203-222.
From the First ACM Workshop on Applied Computational Geometry.
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SILVACO INTERNATIONAL.
VWF Interactive Tools User's Manual, first ed.
Santa Clara, CA, Mar. 1994.
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SIMLINGER, T., KOSINA, H., ROTTINGER, M., AND SELBERHERR, S.
MINIMOS-NT: A Generic Simulator for Complex Semiconductor
Devices.
In Proc: 25th European Solid State Device Research Conference
(Gif-sur-Yvette Cedex, France, 1995), H. de Graaff and H. van Kranenburg,
Eds., Editions Frontieres, pp. 83-86.
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SPELLUCCI, P.
A new technique for inconsistent QP problems in the SQP method.
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SPELLUCCI, P.
A new technique for inconsistent QP problems in the SQP method,
donlp2, numerical results.
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SPELLUCCI, P.
donlp2 Users Guide, 1995.
Program and users guide available as donl2.shar from
netlib/opt/donlp2.
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STIPPEL, H., AND SELBERHERR, S.
Three Dimensional Monte Carlo Simulation of Ion Implantation with
Octree Based Point Location.
In: VPAD'93 [65], pp. 122-123.
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STOCKINGER, M., WILD, A., AND SELBERHERR, S.
Closed-Loop MOSFET Doping Profile Optimization for Portable Systems.
In Proc: Proc. MSM Int. Conf. on Modeling and Simulation of
Microsystems (San Juan, Puerto Rico, USA, Apr. 1999), pp. 411-414.
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STOCKINGER, M., WILD, A., AND SELBERHERR, S.
Drive Performance of an Asymmetric MOSFET Structure: The Peak
Device.
Microelectronics Journal 30, 3 (1999), 229-233.
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STRASSER, R., AND SELBERHERR, S.
Parallel and Distributed TCAD Simulations using Dynamic Load
Balancing.
In: Meyer and Biesemans [32], pp. 89-92.
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STRASSER, R.
Rigorous TCAD Investigations on Semiconductor Fabrication.
Dissertation, Technische Universität Wien, 1999.
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STROUSTRUP, B.
The C++ Programming Language.
Addison-Wesley, 1986.
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TECHNOLOGY MODELING ASSOCIATES, INC.
TMA TSUPREM-4, Two-Dimensional Process Simulation Program,
Version 6.2.
Palo Alto, CA, June 1995.
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TECHNOLOGY MODELING ASSOCIATES, INC.
TMA WorkBench Version 2.0 User's Manual.
Sunnyvale, California, Mar. 1996.
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TSIVIDIS, Y.P.
Operation and Modeling of the MOS Transistor.
McGraw-Hill, 1987.
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TUPPA, W.
VMake - A CASE-Oriented Configuration Management Utility.
Dissertation, Technische Universität Wien, Oct. 1996.
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VAN DER WOLF, P.
CAD Frameworks.
Kluwer, 1994.
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VETTERLING, W.T., AND TEUKOLSKY, S.A.
Numerical Recipes.
Cambridge University Press, 1986.
- 64
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VOORDE, P.V.
MOSFET Scaling into the Future.
Hewlett-Packard Journal 48, 4 (Aug. 1997), 96-100.
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Proc. Int. Workshop on VLSI Process and Device Modeling (Nara, Japan,
1993).
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WELCH, B.
Practical Programming in Tcl and Tk.
Prentice-Hall, 1995.
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WENMACHER, A.
Als wäre nichts geschehen; Bibliotheksfunktionen helfen beim
Checkpointing.
iX (1999).
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WHITLEY, D.
A Genetic Algorithm Tutorial.
Tech. rep., Department of Computer Science; Colorado State
University, November 1993.
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WOLF, S.
The Submicron MOSFET, vol. 3 of Silicon Processing for the
VLSI Era.
Lattice Press, Sunset Beach, California, 1995.
R. Plasun